FDFS2P103 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDFS2P103 is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 5.3A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and features a Schottky diode (isolated). This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

FDFS2P103
onsemiIn Stock: 902FDFS2P103 Datasheet
FDFS2P103
Current Part
IRF9335TRPBF
Infineon TechnologiesIn Stock: 21164IRF9335TRPBF Datasheet
IRF9335TRPBF
Similar
RRH050P03TB1
Rohm SemiconductorIn Stock: 6257RRH050P03TB1 Datasheet
RRH050P03TB1
Similar
TSM9435CS RLG
Taiwan Semiconductor CorporationIn Stock: 2463TSM9435CS RLG Datasheet
TSM9435CS RLG
Similar

Key Parameters

Parameter Value
FET Type P-Channel
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Rds On (Max) @ Id, Vgs 59mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 5 V
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)

Substitute Part Grouping Explanation

Substitution of the FDFS2P103 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • FET Type: P-Channel (required match)
  • Drain to Source Voltage (Vdss): 30V (required match)
  • Continuous Drain Current (Id): minimum 5.3A at 25°C
  • Rds On (Max): 59mOhm or lower at rated conditions
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Gate Charge (Qg): within acceptable switching performance range

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount (required match)
  • Package / Case: 8-SOIC or equivalent 8-pin surface mount package (0.154", 3.90mm Width)
  • Moisture Sensitivity Level (MSL): 1 or 3 (168 Hours)

All three substitute parts meet these criteria and are electrically and mechanically compatible with the FDFS2P103.

Parameter Comparison

Parameter FDFS2P103 (onsemi) IRF9335TRPBF (Infineon) RRH050P03TB1 (Rohm) TSM9435CS RLG (Taiwan Semiconductor)
FET Type P-Channel P-Channel P-Channel P-Channel
Vdss (V) 30 30 30 30
Id @ 25°C (A) 5.3 (Ta) 5.4 (Ta) 5.0 (Ta) 5.3 (Tc)
Rds On (Max) @ Id, Vgs (mOhm) 59 @ 5.3A, 10V 59 @ 5.4A, 10V 50 @ 5A, 10V 60 @ 5.3A, 10V
Vgs(th) (Max) @ Id (V) 3 @ 250µA 2.4 @ 10µA 2.5 @ 1mA 3 @ 250µA
Gate Charge (Qg) (Max) @ Vgs (nC) 8 @ 5V 14 @ 10V 9.2 @ 5V 27 @ 10V
Vgs (Max) (±V) ±25 ±20 ±20 ±20
Input Capacitance (Ciss) (Max) @ Vds (pF) 528 @ 15V 386 @ 25V 850 @ 10V 551.57 @ 15V
Power Dissipation (Max) (W) 0.9 (Ta) 2.5 (Ta) 0.65 (Ta) 5.3 (Tc)
Operating Temperature (°C) -55 ~ 150 -55 ~ 150 -55 ~ 150 -55 ~ 150
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC 8-SO 8-SOP 8-SOP
Product Status Obsolete Active Active Obsolete

Engineering Selection Recommendations

IRF9335TRPBF (Infineon Technologies)

The IRF9335TRPBF is an active product with ROHS3 compliance and REACH unaffected status. It provides electrical equivalence with identical Vdss (30V) and Rds On (59mOhm @ 5.4A, 10V). The device offers higher power dissipation capability (2.5W vs. 0.9W) and improved gate charge characteristics (14nC @ 10V). The 8-SO package is mechanically compatible with the 8-SOIC footprint. This part is recommended for applications requiring long-term supply assurance and regulatory compliance.

RRH050P03TB1 (Rohm Semiconductor)

The RRH050P03TB1 is an active product with ROHS3 compliance and REACH unaffected status. It provides electrical equivalence with identical Vdss (30V) and superior Rds On performance (50mOhm @ 5A, 10V). The device is rated for 5.0A continuous drain current, which meets the 5.3A requirement of the FDFS2P103. The 8-SOP package is mechanically compatible with the 8-SOIC footprint. This part is recommended for applications prioritizing lower on-resistance and thermal performance.

TSM9435CS RLG (Taiwan Semiconductor Corporation)

The TSM9435CS RLG is an obsolete product with ROHS3 compliance and REACH unaffected status. It provides electrical equivalence with identical Vdss (30V), Id (5.3A), and Vgs(th) (3V @ 250µA). The device exhibits higher gate charge (27nC @ 10V) and power dissipation (5.3W) compared to the FDFS2P103. The 8-SOP package is mechanically compatible with the 8-SOIC footprint. This part is suitable for legacy design support but not recommended for new designs due to obsolete status.

Frequently Asked Questions (FAQ)

Q: Can the IRF9335TRPBF directly replace the FDFS2P103 in existing designs?

A: Yes. The IRF9335TRPBF meets all electrical and mechanical compatibility requirements. Both devices are rated for 30V Vdss, feature P-Channel configuration, and are housed in compatible 8-pin surface mount packages. The IRF9335TRPBF provides equivalent or superior performance across key parameters including Rds On and operating temperature range.

Q: What is the primary difference between the RRH050P03TB1 and FDFS2P103?

A: The RRH050P03TB1 features lower on-resistance (50mOhm vs. 59mOhm at rated conditions) and reduced power dissipation (650mW vs. 900mW). Both devices maintain identical Vdss (30V) and compatible current ratings. The RRH050P03TB1 is an active product, providing superior long-term availability compared to the obsolete FDFS2P103.

Q: Are the 8-SOIC, 8-SO, and 8-SOP packages pin-compatible?

A: The 8-SOIC, 8-SO, and 8-SOP packages share the same 0.154" (3.90mm) width and 8-pin configuration, making them mechanically compatible for PCB footprint purposes. Pin assignments for P-Channel MOSFETs in these packages are standardized, ensuring functional compatibility.

Q: Why is the TSM9435CS RLG listed as obsolete?

A: The TSM9435CS RLG is classified as obsolete by Taiwan Semiconductor Corporation. While it remains electrically compatible with the FDFS2P103, its obsolete status limits future availability and supply chain reliability. For new designs, the active alternatives IRF9335TRPBF or RRH050P03TB1 are recommended.

Q: What is the significance of gate charge (Qg) differences between these parts?

A: Gate charge affects switching speed and driver circuit requirements. The FDFS2P103 features lower gate charge (8nC @ 5V) compared to the TSM9435CS RLG (27nC @ 10V). The IRF9335TRPBF (14nC @ 10V) and RRH050P03TB1 (9.2nC @ 5V) provide intermediate values. Lower gate charge enables faster switching and reduced driver power consumption.

Q: Can these substitutes handle the same power dissipation as the FDFS2P103?

A: The IRF9335TRPBF (2.5W) and TSM9435CS RLG (5.3W) exceed the FDFS2P103 power dissipation rating (900mW), providing thermal margin. The RRH050P03TB1 (650mW) operates below the original specification. Thermal design must account for the specific power dissipation rating of the selected substitute part.

Q: Are all substitute parts REACH compliant?

A: Yes. All three substitute parts are REACH unaffected. The FDFS2P103 is also REACH unaffected. All parts carry EAR99 ECCN classification and are suitable for regulated export applications.

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