FDFME2P823ZT P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDFME2P823ZT is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 2.6A continuous drain current. This device features onsemi's PowerTrench® technology in a 6-MicroFET surface mount package and includes an isolated Schottky diode. The part is currently classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

FDFME2P823ZT

onsemiIn Stock: 996FDFME2P823ZT Datasheet

Current PartRFQ

DMP2035UFCL-7

Diodes IncorporatedIn Stock: 13645DMP2035UFCL-7 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDFME2P823ZT is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: P-Channel configuration required
• Drain to Source Voltage (Vdss): 20V minimum rating
• Gate Threshold Voltage (Vgs(th)): 1V maximum @ 250µA
• Maximum Gate Voltage (Vgs): ±8V
• Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount
• Package Classification: 6-pin UFDFN or equivalent footprint (1.6x1.6mm)

Performance Considerations:

• Continuous Drain Current (Id): Substitute must meet or exceed 2.6A @ 25°C
• On-Resistance (Rds On): Lower values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values improve switching speed

The DMP2035UFCL-7 from Diodes Incorporated meets all electrical and mechanical substitution criteria while offering enhanced performance characteristics in the same package class.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The FDFME2P823ZT is classified as obsolete. The DMP2035UFCL-7 is an active product with current manufacturing support and availability. Selection of the active substitute part ensures long-term supply chain continuity and access to technical documentation.

Compliance and Certification: Both parts operate within the same temperature range (-55°C to 150°C TJ) and share identical gate threshold voltage specifications (1V @ 250µA) and maximum gate voltage ratings (±8V). The DMP2035UFCL-7 carries RoHS3 compliance certification, whereas the FDFME2P823ZT does not specify RoHS status. Both parts are REACH Unaffected and classified under ECCN EAR99.

Electrical Performance: The DMP2035UFCL-7 provides superior electrical performance with 6.6A continuous drain current (2.5× the original part), significantly lower on-resistance (24 mOhm versus 142 mOhm), and reduced power dissipation (740 mW versus 1.4W). These characteristics result in lower junction temperatures and improved thermal efficiency in equivalent circuit applications.

Package Compatibility: Both devices utilize 6-pin surface mount packages with 1.6×1.6mm footprints. The DMP2035UFCL-7 is designated as 6-PowerUFDFN, while the FDFME2P823ZT uses 6-UFDFN. These package variants are mechanically and electrically compatible for PCB layout purposes.

Frequently Asked Questions (FAQ)

Q: Can the DMP2035UFCL-7 directly replace the FDFME2P823ZT in existing designs?

A: Yes. Both parts share identical electrical specifications for FET type (P-Channel), drain-to-source voltage (20V), gate threshold voltage (1V @ 250µA), maximum gate voltage (±8V), and operating temperature range (-55°C to 150°C TJ). The 6-pin surface mount packages are mechanically compatible with equivalent 1.6×1.6mm footprints.

Q: What are the performance advantages of the DMP2035UFCL-7 substitute?

A: The DMP2035UFCL-7 offers higher continuous drain current (6.6A versus 2.6A), significantly lower on-resistance (24 mOhm versus 142 mOhm at 4.5V gate voltage), and reduced power dissipation (740 mW versus 1.4W). These improvements result in lower thermal stress and improved circuit efficiency.

Q: Are there package footprint differences between these parts?

A: Both parts use 6-pin surface mount packages with identical 1.6×1.6mm dimensions. The FDFME2P823ZT is specified as 6-UFDFN Exposed Pad, while the DMP2035UFCL-7 is designated 6-PowerUFDFN. These designations reflect internal die and thermal management differences but maintain PCB layout compatibility.

Q: What is the significance of the higher gate charge (Qg) in the DMP2035UFCL-7?

A: The DMP2035UFCL-7 exhibits higher gate charge (44 nC versus 7.7 nC) due to its larger die size and higher current rating. This requires slightly higher gate drive energy but does not affect substitution compatibility. Gate drive circuits must be verified for adequate current sourcing capability.

Q: Does the higher input capacitance (Ciss) of the DMP2035UFCL-7 affect circuit operation?

A: The DMP2035UFCL-7 has higher input capacitance (2200 pF versus 405 pF), which reflects its larger die area and higher current capability. This may slightly increase switching transition times in high-frequency applications. Gate drive circuit impedance and switching frequency should be evaluated for specific applications.

Q: What compliance certifications apply to the substitute part?

A: The DMP2035UFCL-7 carries RoHS3 compliance certification and is REACH Unaffected. Both parts are classified under ECCN EAR99 for export control purposes. Verify compliance requirements for your specific application and regulatory jurisdiction.

Q: Is the isolated Schottky diode feature of the FDFME2P823ZT present in the DMP2035UFCL-7?

A: The FDFME2P823ZT specifies an isolated Schottky diode as an integrated FET feature. The DMP2035UFCL-7 does not specify this feature in the provided technical parameters. Verify internal diode configuration requirements for your specific circuit topology before substitution.