FDFMA2P853 Equivalent & Substitute Parts

Part Overview

The FDFMA2P853 is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 3A continuous drain current in a 6-MicroFET (2x2) surface mount package. This device features an isolated Schottky diode and operates across the temperature range of -55°C to 150°C. The part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain functional compatibility for new designs and production continuity.

Substiute Parts

FDFMA2P853
onsemiIn Stock: 8286FDFMA2P853 Datasheet
FDFMA2P853
Current Part
NTLJF3117PT1G
onsemiIn Stock: 17913NTLJF3117PT1G Datasheet
NTLJF3117PT1G
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PMDPB80XP,115
Nexperia USA Inc.In Stock: 12981PMDPB80XP,115 Datasheet
PMDPB80XP,115
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Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3 A
Rds On (Max) @ Id, Vgs 120 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5V
Vgs (Max) ±8 V
Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 10V
Power Dissipation (Max) 1.4 W
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FDFMA2P853 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 20V
  • Continuous drain current (Id) must support the application requirement; substitutes with lower Id ratings require circuit re-evaluation
  • Gate threshold voltage (Vgs(th)) and maximum gate voltage (Vgs Max) must remain within ±8V specification
  • On-resistance (Rds On) characteristics must be compatible with circuit switching and thermal requirements
  • Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Criteria:

  • Surface mount package with 6-pin configuration and 2x2mm footprint
  • Exposed pad design for thermal management
  • RoHS3 compliance and MSL 1 rating required

Identified Substitutes:

  1. NTLJF3117PT1G (onsemi, µCool™ series, Active status): Matches Vdss (20V), operates within temperature range, maintains gate voltage specifications, and provides compatible package footprint. Lower Id rating (2.3A vs. 3A) and reduced power dissipation (710mW vs. 1.4W) require application-specific evaluation.

  2. PMDPB80XP,115 (Nexperia USA Inc., Active status): Dual P-Channel configuration with 20V Vdss rating and 2.7A per channel. Different package designation (6-HUSON vs. 6-VDFN) requires PCB layout verification. Dual-channel architecture differs from single-channel topology.

Parameter Comparison

Parameter FDFMA2P853 NTLJF3117PT1G PMDPB80XP,115
Manufacturer onsemi onsemi Nexperia USA Inc.
Product Status Obsolete Active Active
FET Type / Configuration P-Channel (Single) P-Channel (Single) P-Channel (Dual)
Vdss 20V 20V 20V
Id @ 25°C 3A 2.3A 2.7A
Rds On (Max) 120 mOhm @ 3A, 4.5V 100 mOhm @ 2A, 4.5V 102 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) 1.3V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) 6 nC @ 4.5V 6.2 nC @ 4.5V 8.6 nC @ 4.5V
Vgs (Max) ±8V ±8V ±8V (1.8V logic level)
Ciss (Max) 435 pF @ 10V 531 pF @ 10V 550 pF @ 10V
Power Dissipation (Max) 1.4W 710mW 485mW
Operating Temperature -55 to 150°C -55 to 150°C -55 to 150°C
Package / Case 6-VDFN Exposed Pad 6-WDFN Exposed Pad 6-UFDFN Exposed Pad
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

NTLJF3117PT1G Selection Criteria: This onsemi substitute maintains single-channel P-Channel topology and identical voltage ratings (20V Vdss, ±8V Vgs). Active product status ensures long-term availability and supply chain continuity. ROHS3 compliance and MSL 1 rating match the original specification. The 6-WDFN package footprint is mechanically compatible with 6-VDFN layouts within standard PCB design tolerances. Lower continuous drain current (2.3A vs. 3A) and reduced power dissipation (710mW vs. 1.4W) are suitable for applications not requiring the full 3A rating. Gate charge (6.2 nC) and on-resistance (100 mOhm @ 2A, 4.5V) remain within acceptable switching and thermal performance parameters.

PMDPB80XP,115 Selection Criteria: This Nexperia substitute provides dual P-Channel configuration with 20V Vdss and 2.7A per channel. Active product status and ROHS3 compliance ensure regulatory alignment. The 6-HUSON package differs from the original 6-VDFN designation; PCB layout and thermal pad connectivity require verification against design specifications. Dual-channel architecture introduces topological differences; single-channel applications require use of one channel only, with the second channel either unused or configured for parallel operation. Gate charge (8.6 nC) is elevated relative to the original specification. Logic-level gate drive (1.8V) provides enhanced compatibility with modern digital control circuits.

Compliance and Regulatory Alignment: Both substitutes maintain ROHS3 compliance, MSL 1 rating, and operating temperature range (-55°C to 150°C) consistent with the original FDFMA2P853. REACH unaffected status and EAR99 ECCN classification are preserved across all alternatives.

Frequently Asked Questions (FAQ)

Q: Can NTLJF3117PT1G directly replace FDFMA2P853 in existing PCB designs?

A: The NTLJF3117PT1G maintains compatible electrical specifications (20V Vdss, ±8V Vgs, -55 to 150°C operating range) and surface mount 6-pin configuration. The 6-WDFN package footprint is mechanically compatible with 6-VDFN layouts. However, the lower continuous drain current (2.3A vs. 3A) and reduced power dissipation (710mW vs. 1.4W) require verification that the application does not demand the full 3A rating. Thermal management characteristics may differ due to package geometry variations.

Q: What are the key differences between PMDPB80XP,115 and FDFMA2P853?

A: PMDPB80XP,115 is a dual P-Channel MOSFET array, whereas FDFMA2P853 is a single-channel device. Both share 20V Vdss rating and -55 to 150°C operating range. The dual-channel configuration introduces topological differences; applications designed for single-channel operation require either use of one channel only or circuit redesign for parallel operation. Package designation differs (6-HUSON vs. 6-VDFN), necessitating PCB layout verification. Gate charge is elevated (8.6 nC vs. 6 nC), affecting switching speed characteristics.

Q: Are package footprints interchangeable between FDFMA2P853, NTLJF3117PT1G, and PMDPB80XP,115?

A: FDFMA2P853 (6-VDFN) and NTLJF3117PT1G (6-WDFN) share compatible 2x2mm surface mount footprints with exposed pad design. Standard PCB design tolerances accommodate both packages. PMDPB80XP,115 uses 6-HUSON package designation; while also 2x2mm, thermal pad connectivity and pin assignment may differ. PCB layout verification is required before substitution.

Q: What is the impact of lower drain current ratings in substitute parts?

A: NTLJF3117PT1G (2.3A) and PMDPB80XP,115 (2.7A per channel) provide lower continuous drain current than FDFMA2P853 (3A). Applications operating at or near 3A require thermal and electrical re-evaluation. Lower current ratings typically correlate with reduced power dissipation and improved thermal efficiency in lower-current applications. Circuit design must confirm that the substitute part's Id rating meets application requirements.

Q: Do all substitute parts maintain RoHS3 and MSL 1 compliance?

A: Yes. Both NTLJF3117PT1G and PMDPB80XP,115 are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original FDFMA2P853 specification. REACH unaffected status is maintained across all alternatives.

Q: How do gate charge differences affect circuit performance?

A: FDFMA2P853 specifies 6 nC gate charge at 4.5V. NTLJF3117PT1G (6.2 nC) and PMDPB80XP,115 (8.6 nC) exhibit slightly higher gate charge. Gate charge influences switching speed and driver circuit requirements. Higher gate charge may require increased driver current or extended switching times. Applications with stringent switching frequency or efficiency requirements require detailed gate drive circuit analysis.

Q: Is the PMDPB80XP,115 dual-channel configuration suitable for single-channel applications?

A: PMDPB80XP,115 contains two independent P-Channel MOSFETs in a single package. Single-channel applications may utilize one channel while leaving the second channel unused or configured for parallel operation to increase current capacity. Unused channels must be properly biased (gate tied to source or supply) to prevent floating gate conditions. Circuit design must account for the dual-channel topology.

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