FDFMA2N028Z Equivalent & Substitute Parts

Part Overview

The FDFMA2N028Z is an N-Channel MOSFET manufactured by onsemi, part of the PowerTrench® series. This device is rated for 20V drain-to-source voltage with a continuous drain current of 3.7A at 25°C and features an integrated Schottky diode in a 6-MicroFET (2x2) surface mount package. The product status is listed as obsolete, necessitating identification of equivalent alternatives for ongoing design support and procurement.

Substiute Parts

FDFMA2N028Z
onsemiIn Stock: 6060FDFMA2N028Z Datasheet
FDFMA2N028Z
Current Part
FDFMA2N028Z
onsemiIn Stock: 6060FDFMA2N028Z Datasheet
FDFMA2N028Z
Parametric Equivalent

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) @ 25°C 3.7 A
Rds On (Max) @ 3.7A, 4.5V 68 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 1.5 V
Gate Charge (Qg) @ 4.5V 6 nC
Input Capacitance (Ciss) @ 10V 455 pF
Power Dissipation (Max) 1.4 W
Operating Temperature Range -55 to 150 °C
Package Type 6-VDFN Exposed Pad
FET Feature Schottky Diode (Isolated)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the FDFMA2N028Z is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

  • Drain-to-source voltage rating of 20V
  • Continuous drain current capability of 3.7A at 25°C
  • On-state resistance (Rds On) of 68mOhm maximum at 3.7A and 4.5V gate voltage
  • Gate threshold voltage of 1.5V maximum at 250µA
  • Gate charge of 6nC maximum at 4.5V
  • Input capacitance of 455pF maximum at 10V
  • Power dissipation rating of 1.4W

Mechanical and Package Specifications:

  • 6-VDFN Exposed Pad package configuration
  • Surface mount technology
  • 6-MicroFET (2x2) form factor

Functional Requirements:

  • N-Channel MOSFET topology
  • Integrated Schottky diode (isolated)
  • Operating temperature range of -55°C to 150°C

Parts meeting all these criteria are classified as parametric equivalents and direct substitutes.

Parameter Comparison

Parameter FDFMA2N028Z (Main Part) FDFMA2N028Z (Substitute) Match Status
Manufacturer onsemi onsemi Identical
FET Type N-Channel N-Channel Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
Vdss 20V 20V Identical
Id @ 25°C 3.7A 3.7A Identical
Rds On (Max) 68mOhm @ 3.7A, 4.5V 68mOhm @ 3.7A, 4.5V Identical
Vgs(th) (Max) 1.5V @ 250µA 1.5V @ 250µA Identical
Gate Charge (Qg) 6nC @ 4.5V 6nC @ 4.5V Identical
Ciss (Max) 455pF @ 10V 455pF @ 10V Identical
Power Dissipation (Max) 1.4W 1.4W Identical
Operating Temperature -55°C to 150°C -55°C to 150°C Identical
Package 6-VDFN Exposed Pad 6-VDFN Exposed Pad Identical
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Identical
Series PowerTrench® PowerTrench® Identical
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
MSL Rating 1 (Unlimited) 1 (Unlimited) Identical

Engineering Selection Recommendations

The FDFMA2N028Z is classified as obsolete. When sourcing this component, the following factors apply:

Compliance and Certification:

  • The part is ROHS3 compliant, meeting environmental regulatory requirements
  • Moisture sensitivity level is rated as MSL 1 (Unlimited), indicating no special moisture handling requirements during storage or assembly
  • REACH status is unaffected, confirming no restricted substance concerns

Availability and Procurement:

  • Current inventory of 5963 pieces is available as new original stock
  • The part is supplied in Cut Tape (CT) packaging format
  • The base product number is FDFMA2

Design Continuity:

  • Direct parametric equivalents maintain identical electrical and mechanical specifications
  • The 6-VDFN Exposed Pad package is suitable for surface mount assembly processes
  • The integrated Schottky diode (isolated) provides body diode functionality without external components

For applications requiring the FDFMA2N028Z, equivalent parts meeting all specified parameters provide direct functional replacement without circuit redesign.

Frequently Asked Questions (FAQ)

Q: What makes a part a valid substitute for the FDFMA2N028Z?

A: A valid substitute must match all electrical parameters (Vdss, Id, Rds On, Vgs(th), gate charge, input capacitance, power dissipation), operate across the same temperature range (-55°C to 150°C), feature the same package type (6-VDFN Exposed Pad), and include the integrated Schottky diode (isolated).

Q: Can I use a different package variant of the FDFMA2 series?

A: No. The 6-VDFN Exposed Pad package is a specific requirement. Different package variants may have different thermal characteristics, pin configurations, or electrical performance that would require circuit redesign.

Q: Is the Schottky diode feature critical for substitution?

A: Yes. The integrated Schottky diode (isolated) is a functional component of this MOSFET. Substitutes must include this feature to maintain equivalent circuit behavior.

Q: What is the significance of the MSL 1 rating?

A: MSL 1 (Unlimited) indicates that this component has no moisture sensitivity restrictions. Standard storage and handling procedures are sufficient; no special dry-pack or baking procedures are required.

Q: Does RoHS3 compliance affect substitution?

A: RoHS3 compliance is a regulatory requirement for the main part. Substitute parts should maintain equivalent compliance status to ensure consistency with system-level environmental certifications.

Q: Can I substitute based on similar electrical ratings alone?

A: No. Substitution requires matching all specified parameters, including package type, thermal characteristics, and integrated features. Partial parameter matching does not constitute a valid substitute.

Q: What is the significance of the PowerTrench® series designation?

A: PowerTrench® is onsemi's proprietary MOSFET technology platform. Parts within this series share consistent design characteristics and performance optimization for the specified voltage and current ratings.

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