FDD8880-G N-Channel Power MOSFET Equivalent & Substitute Parts

Part Overview

The FDD8880-G is an N-Channel Power MOSFET manufactured by onsemi, designed for surface mount applications in the TO-252AA package. This device features a 30 V drain-to-source voltage rating with continuous drain current capability of 13 A (Ta) and 58 A (Tc), delivering 55 W maximum power dissipation. The FDD8880-G is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing in applications where this device was originally specified.

Substiute Parts

FDD8880-G

onsemiIn Stock: 885FDD8880-G Datasheet

Current PartRFQ

FDD8880_NL

Fairchild SemiconductorIn Stock: 2317FDD8880_NL Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDD8880-G is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part FDD8880_NL from Fairchild Semiconductor qualifies as a parametric equivalent based on the following criteria:

Electrical Parameter Equivalence:

• Identical Drain to Source Voltage (Vdss): 30 V
• Identical Continuous Drain Current ratings: 13 A (Ta) and 58 A (Tc)
• Identical On-State Drain Resistance (Rds On): 9 mOhm @ 35A, 10V
• Identical Gate Threshold Voltage (Vgs(th)): 2.5 V @ 250µA
• Identical Gate Charge (Qg): 31 nC @ 10V
• Identical Maximum Gate Voltage (Vgs): ±20V
• Identical Input Capacitance (Ciss): 1260 pF @ 15V
• Identical Power Dissipation: 55 W (Tc)
• Identical Operating Temperature Range: -55°C to 175°C (TJ)

Mechanical Parameter Equivalence:

• Identical Mounting Type: Surface Mount
• Identical Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

The FDD8880_NL maintains active product status with RoHS3 compliance and REACH compliance, providing long-term availability and regulatory support.

Parameter Comparison

Engineering Selection Recommendations

The FDD8880_NL from Fairchild Semiconductor is a direct parametric equivalent to the obsolete FDD8880-G from onsemi. All electrical characteristics, mechanical specifications, and package dimensions are identical. The FDD8880_NL is currently in active production status, ensuring long-term component availability and supply chain continuity.

The FDD8880_NL carries RoHS3 compliance and REACH compliance certifications, meeting current regulatory requirements for electronic component manufacturing and distribution. These certifications support deployment in applications subject to environmental and hazardous substance restrictions.

For applications originally designed with the FDD8880-G, direct substitution with the FDD8880_NL requires no circuit modifications, PCB layout changes, or thermal management adjustments. Pin configuration, electrical performance, and thermal characteristics remain unchanged.

Frequently Asked Questions (FAQ)

Q: Can the FDD8880_NL be used as a direct replacement for the FDD8880-G?

A: Yes. The FDD8880_NL is a parametric equivalent with identical electrical and mechanical specifications. All drain-to-source voltage, current ratings, on-state resistance, gate characteristics, and package dimensions match the original FDD8880-G. No circuit redesign is required.

Q: What is the difference between the FDD8880-G and FDD8880_NL?

A: The primary difference is product status and regulatory compliance. The FDD8880-G is obsolete, while the FDD8880_NL is in active production. The FDD8880_NL includes RoHS3 and REACH compliance certifications. All electrical and mechanical parameters are identical.

Q: Are there any package compatibility issues when substituting the FDD8880_NL for the FDD8880-G?

A: No. Both devices use the TO-252-3 DPAK package with identical pin configuration, lead spacing, and thermal tab dimensions. PCB footprints and assembly processes remain unchanged.

Q: Does the FDD8880_NL require different gate drive voltage than the FDD8880-G?

A: No. Both devices have identical gate threshold voltage (2.5 V @ 250µA), maximum gate voltage (±20V), and gate charge (31 nC @ 10V). Existing gate drive circuits require no modification.

Q: What is the thermal performance difference between the FDD8880-G and FDD8880_NL?

A: Thermal performance is identical. Both devices deliver 55 W maximum power dissipation at Tc, with identical on-state resistance of 9 mOhm @ 35A, 10V. Thermal management design remains unchanged.

Q: Is the FDD8880_NL suitable for high-temperature applications?

A: Yes. The FDD8880_NL operates across the full temperature range of -55°C to 175°C (TJ), matching the FDD8880-G specification. This range supports industrial and automotive applications requiring extended temperature performance.

Q: What inventory status should be expected for the FDD8880_NL?

A: The FDD8880_NL is in active production with established supply channels. Current inventory availability is 2214 pieces in new original condition, providing immediate sourcing capability compared to the obsolete FDD8880-G.