FDD8782 Equivalent & Substitute Parts

Part Overview

The FDD8782 is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with 35A continuous drain current in a surface mount TO-252AA package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and production continuity. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges to ensure functional equivalence in circuit applications.

Substiute Parts

FDD8782

onsemiIn Stock: 25313FDD8782 Datasheet

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IPD090N03LGATMA1

Infineon TechnologiesIn Stock: 5417IPD090N03LGATMA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDD8782 are identified based on strict electrical and mechanical compatibility criteria. The following parameters determine substitution eligibility:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology required
• Technology: MOSFET (Metal Oxide) construction required
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 25V rating
• Current - Continuous Drain (Id): Substitute must equal or exceed 35A rating
• Rds On (Max): Substitute must not exceed 11mOhm at rated conditions
• Operating Temperature Range: Substitute must support -55°C to 175°C minimum
• Gate Voltage (Vgs Max): Substitute must support ±20V maximum

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 required

Compliance Criteria:

• RoHS Status: ROHS3 Compliant required
• Moisture Sensitivity Level: MSL 1 (Unlimited) required

The IPD090N03LGATMA1 meets all substitution criteria with enhanced electrical performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

The IPD090N03LGATMA1 from Infineon Technologies serves as a direct substitute for the obsolete FDD8782. This substitution is supported by the following factors:

Electrical Performance: The IPD090N03LGATMA1 exceeds the FDD8782 specifications across all critical parameters. The 30V Vdss rating provides 5V additional margin over the 25V requirement. The 40A continuous drain current rating exceeds the 35A specification. The on-resistance of 9mOhm at 30A, 10V is superior to the FDD8782's 11mOhm specification, resulting in reduced power dissipation and improved thermal performance.

Mechanical Compatibility: Both devices utilize identical TO-252-3 DPAK surface mount packaging, enabling direct PCB footprint compatibility without layout modifications.

Compliance and Availability: The IPD090N03LGATMA1 maintains ROHS3 compliance and MSL 1 rating, matching the FDD8782 environmental and handling requirements. The substitute part is classified as active product status with confirmed inventory availability, ensuring long-term supply continuity.

Thermal Characteristics: Operating temperature range compatibility (-55°C to 175°C) is maintained across both devices, supporting identical thermal design requirements.

Frequently Asked Questions (FAQ)

Q: Can the IPD090N03LGATMA1 be used as a direct replacement for the FDD8782 without circuit modifications?

A: Yes. The IPD090N03LGATMA1 is electrically and mechanically compatible with the FDD8782. Both devices share identical TO-252-3 DPAK packaging, gate voltage specifications (±20V), and operating temperature ranges (-55°C to 175°C). The substitute part exceeds all electrical specifications of the original device.

Q: What are the key electrical differences between these two MOSFETs?

A: The IPD090N03LGATMA1 provides enhanced performance: 30V Vdss (versus 25V), 40A continuous drain current (versus 35A), and 9mOhm on-resistance (versus 11mOhm). These improvements result in lower power dissipation and superior thermal characteristics while maintaining full backward compatibility.

Q: Are there any package or pinout differences between the FDD8782 and IPD090N03LGATMA1?

A: No. Both devices use the TO-252-3 DPAK package with identical pinout configuration (2 leads plus tab). PCB footprints are directly compatible without modification.

Q: What is the significance of the lower gate charge specification in the IPD090N03LGATMA1?

A: The IPD090N03LGATMA1 exhibits 15nC gate charge at 10V compared to 25nC for the FDD8782. Lower gate charge reduces driver circuit power requirements and enables faster switching transitions, improving overall circuit efficiency.

Q: Do both devices meet the same compliance and environmental standards?

A: Yes. Both the FDD8782 and IPD090N03LGATMA1 are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. Both support identical operating temperature ranges and environmental handling requirements.

Q: Why is the FDD8782 classified as obsolete?

A: The FDD8782 is no longer in active production. The IPD090N03LGATMA1 represents the current-generation equivalent from Infineon Technologies, offering superior electrical performance and assured long-term availability.

Q: Can the IPD090N03LGATMA1 handle the same power dissipation levels as the FDD8782?

A: The IPD090N03LGATMA1 is rated for 42W maximum power dissipation compared to the FDD8782's 50W rating. However, the superior on-resistance (9mOhm versus 11mOhm) results in lower actual power dissipation at equivalent operating currents, providing improved thermal performance in practical applications.