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FDD8780 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The FDD8780 is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with 35A continuous drain current in a surface mount TO-252AA package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. The FDD8780 operates across a wide temperature range from -55°C to 175°C and is suitable for applications requiring moderate voltage and current switching capabilities in compact surface mount form factors.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 25 | V |
| Continuous Drain Current (Id) @ 25°C | 35 | A |
| On-State Resistance (Rds On) @ 35A, 10V | 8.5 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2.5 | V |
| Gate Charge (Qg) @ 10V | 29 | nC |
| Power Dissipation (Max) | 50 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-252AA (DPAK) | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the FDD8780 is determined by compatibility across the following critical parameters: FET type (N-Channel), technology (MOSFET Metal Oxide), package format (TO-252-3 DPAK), mounting type (Surface Mount), and electrical ratings within acceptable operating margins.
Acceptable substitutes must satisfy these conditions:
- FET Type: N-Channel configuration required
- Technology: MOSFET (Metal Oxide) construction
- Package: TO-252-3, DPAK (2 Leads + Tab), SC-63 compatible
- Mounting: Surface Mount
- Drain-to-Source Voltage (Vdss): Equal to or greater than 25V
- Continuous Drain Current (Id): Equal to or greater than 35A at 25°C
- On-State Resistance (Rds On): Comparable or lower at rated conditions
- Operating Temperature: Minimum -55°C to 175°C range
- Compliance: RoHS3 compliant, REACH unaffected
The substitute parts listed below meet these criteria with electrical and thermal characteristics suitable for direct replacement in applications designed for the FDD8780.
Parameter Comparison
| Parameter | FDD8780 (onsemi) | IPD090N03LGATMA1 (Infineon) | DMG8880LK3-13 (Diodes Inc.) | SUD50N024-09P-E3 (Vishay) |
|---|---|---|---|---|
| Vdss (V) | 25 | 30 | 30 | 22 |
| Id @ 25°C (A) | 35 | 40 | 11 | 49 |
| Rds On (mOhm) | 8.5 @ 35A, 10V | 9 @ 30A, 10V | 7.5 @ 11.6A, 10V | 9.5 @ 20A, 10V |
| Vgs(th) (V) @ 250µA | 2.5 | 2.2 | 2.3 | 3 |
| Qg (nC) | 29 @ 10V | 15 @ 10V | 27.6 @ 10V | 16 @ 4.5V |
| Power Dissipation (W) | 50 | 42 | 1.68 | 39.5 |
| Operating Temperature (°C) | -55 to 175 | -55 to 175 | -55 to 150 | -55 to 175 |
| Package | TO-252AA | PG-TO252-3-11 | TO-252 (DPAK) | TO-252AA |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IPD090N03LGATMA1 (Infineon Technologies OptiMOS™)
The IPD090N03LGATMA1 is the primary substitute for the FDD8780. This device exceeds the original specifications with 30V Vdss rating and 40A continuous drain current, providing margin above the 25V/35A requirements. The lower gate charge (15 nC) improves switching performance. Operating temperature range matches the FDD8780 (-55°C to 175°C). RoHS3 compliance and REACH unaffected status align with regulatory requirements. Active product status ensures long-term availability. The PG-TO252-3-11 package is mechanically and electrically compatible with TO-252AA footprints.
SUD50N024-09P-E3 (Vishay Siliconix TrenchFET®)
The SUD50N024-09P-E3 provides an alternative with 22V Vdss and 49A continuous drain current. While Vdss is below the original 25V specification, this device is suitable for applications where the actual operating voltage does not exceed 22V. The higher current rating (49A) and lower gate charge (16 nC) offer performance advantages in high-frequency switching applications. Operating temperature range extends to 175°C. RoHS3 compliance and active product status support production continuity. TO-252AA packaging ensures direct mechanical compatibility.
DMG8880LK3-13 (Diodes Incorporated)
The DMG8880LK3-13 is not recommended as a primary substitute due to insufficient continuous drain current (11A versus 35A required). This device is suitable only for applications where the actual current requirement is significantly lower than the FDD8780 design specification. The 30V Vdss rating exceeds requirements, but the current limitation restricts its use to lower-power implementations. Operating temperature maximum of 150°C is 25°C below the FDD8780 specification. Active product status and RoHS3 compliance are maintained.
Frequently Asked Questions (FAQ)
Q: Can the IPD090N03LGATMA1 directly replace the FDD8780 without circuit modifications?
A: Yes. The IPD090N03LGATMA1 meets or exceeds all critical electrical parameters of the FDD8780. The higher voltage and current ratings provide design margin. The TO-252AA-compatible package ensures mechanical fit. No circuit modifications are required for direct substitution in applications designed for the FDD8780.
Q: What is the significance of the lower gate charge in the IPD090N03LGATMA1?
A: Gate charge (Qg) directly affects switching speed and driver power requirements. The IPD090N03LGATMA1 gate charge of 15 nC is lower than the FDD8780 at 29 nC, resulting in faster switching transitions and reduced gate driver power dissipation. This improves overall circuit efficiency and may allow use of lower-power gate driver circuits.
Q: Is the SUD50N024-09P-E3 suitable for all FDD8780 applications?
A: The SUD50N024-09P-E3 is suitable only for applications where the actual operating drain-to-source voltage does not exceed 22V. The FDD8780 is rated for 25V operation. If the circuit design requires the full 25V rating, the SUD50N024-09P-E3 is not appropriate. Verify actual operating voltage before selection.
Q: Why is the DMG8880LK3-13 listed if it cannot replace the FDD8780?
A: The DMG8880LK3-13 is included for reference as a related N-Channel MOSFET in TO-252 packaging from an active manufacturer. It is suitable for alternative designs requiring lower current ratings (11A) but is not a functional substitute for the FDD8780 in its original application context.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed—IPD090N03LGATMA1, SUD50N024-09P-E3, and DMG8880LK3-13—are RoHS3 compliant and REACH unaffected, matching the compliance status of the FDD8780.
Q: What is the difference between TO-252AA and PG-TO252-3-11 packages?
A: Both are mechanically and electrically compatible TO-252 DPAK variants with 2 leads plus tab configuration. The PG-TO252-3-11 designation is Infineon's internal package specification for the IPD090N03LGATMA1. PCB footprints designed for TO-252AA accept the PG-TO252-3-11 package without modification.
Q: Can I use the IPD090N03LGATMA1 in applications requiring the full -55°C to 175°C temperature range?
A: Yes. The IPD090N03LGATMA1 operating temperature range is -55°C to 175°C, matching the FDD8780 specification exactly. No thermal derating is required for this temperature range.
Q: How do I verify that a substitute part is appropriate for my specific application?
A: Compare the actual operating conditions in your circuit against the substitute part's rated specifications. Verify that drain-to-source voltage, continuous drain current, and operating temperature do not exceed the substitute part's maximum ratings. Confirm package compatibility with your PCB footprint. Consult the substitute part's datasheet for detailed electrical characteristics and thermal performance curves.
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