FDD8453LZ N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDD8453LZ is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with continuous drain current of 16.4A at Ta and 50A at Tc. This device is housed in a TO-252AA (DPAK) surface mount package and is part of the PowerTrench® series. The FDD8453LZ is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package specifications to ensure direct replacement capability.

Key Parameters

Parameter	FDD8453LZ	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current @ 25°C (Ta)	16.4	A
Continuous Drain Current @ 25°C (Tc)	50	A
RDS(on) Max @ 15A, 10V	6.7	mOhm
Gate Charge (Qg) Max @ 10V	64	nC
Input Capacitance (Ciss) Max @ 20V	3515	pF
Power Dissipation Max (Ta)	3.1	W
Power Dissipation Max (Tc)	65	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the FDD8453LZ is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 40V
Package Type: Must be TO-252-3 (DPAK) or equivalent surface mount configuration
Continuous Drain Current (Tc): Must support minimum 50A at case temperature
RDS(on) characteristics: Must be compatible with 40V, 10V gate drive specifications
Gate Charge (Qg): Lower values indicate improved switching performance
Operating Temperature Range: Must support -55°C to at least 150°C minimum
Mounting Type: Surface mount only
Compliance: RoHS3 compliance required

Substitute parts are grouped into two categories: Direct Equivalents (IPD50N04S408ATMA1, IPD50N04S4L08ATMA1) which maintain active product status and full electrical compatibility, and Similar Alternatives (AOD4184A, SQD50N04-5M6L_GE3, STD80N4F6) which provide functional equivalence with variations in secondary parameters such as gate charge, input capacitance, or product lifecycle status.

Parameter Comparison

Parameter	FDD8453LZ (onsemi)	IPD50N04S408ATMA1 (Infineon)	IPD50N04S4L08ATMA1 (Infineon)	AOD4184A (Alpha & Omega)	SQD50N04-5M6L_GE3 (Vishay)	STD80N4F6 (STMicroelectronics)	Unit
Vdss	40	40	40	40	40	40	V
Id (Tc)	50	50	50	50	50	80	A
RDS(on) Max @ 10V	6.7 @ 15A	7.9 @ 50A	7.3 @ 50A	7.0 @ 20A	5.6 @ 20A	6.0 @ 40A	mOhm
Qg Max @ 10V	64	22.4	30	33	75	36	nC
Ciss Max	3515 @ 20V	1780 @ 6V	2340 @ 25V	1800 @ 20V	4000 @ 25V	2150 @ 25V	pF
Power Dissipation (Tc)	65	46	46	50	71	70	W
Operating Temp Range	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	-
Product Status	Obsolete	Active	Active	Not For New Designs	Active	Active	-
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	-
AEC-Q101 Qualified	No	Yes	Yes	No	Yes	Yes	-

Engineering Selection Recommendations

Primary Substitutes (Direct Equivalents):

IPD50N04S408ATMA1 and IPD50N04S4L08ATMA1 from Infineon Technologies are the preferred direct substitutes for the FDD8453LZ. Both devices maintain the critical 40V/50A electrical specifications and TO-252-3 package configuration. IPD50N04S4L08ATMA1 is recommended for applications requiring automotive-grade reliability, as it carries AEC-Q101 qualification and supports extended operating temperature to 175°C. Both Infineon parts are in active production status, ensuring long-term availability and supply chain stability. The IPD50N04S4L08ATMA1 exhibits superior gate charge characteristics (30 nC versus 64 nC), resulting in improved switching efficiency.

Secondary Alternatives:

SQD50N04-5M6L_GE3 from Vishay Siliconix is suitable for applications where lower on-resistance is prioritized (5.6 mOhm at 20A, 10V). This device carries AEC-Q101 qualification and active product status. The higher power dissipation rating (71W at Tc) provides additional thermal margin in demanding applications.

STD80N4F6 from STMicroelectronics offers higher continuous drain current (80A at Tc) and is qualified to AEC-Q101. This device is appropriate for applications requiring enhanced current handling capacity beyond the 50A specification of the FDD8453LZ.

AOD4184A from Alpha & Omega Semiconductor Inc. provides functional equivalence but carries "Not For New Designs" status, limiting its suitability for new product development. This part is appropriate only for legacy system maintenance where supply continuity is critical.

Compliance Considerations:

All substitute parts maintain RoHS3 compliance and MSL Level 1 (unlimited moisture sensitivity). For automotive applications, IPD50N04S4L08ATMA1, SQD50N04-5M6L_GE3, and STD80N4F6 are preferred due to AEC-Q101 qualification. The FDD8453LZ lacks automotive qualification; substitution with qualified parts may require design validation in automotive contexts.

Frequently Asked Questions (FAQ)

Q: Can IPD50N04S408ATMA1 and IPD50N04S4L08ATMA1 be used interchangeably with FDD8453LZ?

A: Both Infineon parts are direct electrical and mechanical equivalents to the FDD8453LZ. They share identical 40V/50A ratings, TO-252-3 package configuration, and RoHS3 compliance. IPD50N04S4L08ATMA1 is preferred for new designs due to active product status and AEC-Q101 automotive qualification. Both parts are pin-compatible and require no circuit modifications.

Q: What is the primary difference between IPD50N04S408ATMA1 and IPD50N04S4L08ATMA1?

A: IPD50N04S4L08ATMA1 includes AEC-Q101 automotive qualification and supports extended operating temperature to 175°C (versus standard industrial range). Gate charge is 30 nC versus 22.4 nC, representing a minor performance trade-off for automotive-grade reliability. Both maintain identical electrical specifications for voltage and current ratings.

Q: Why is STD80N4F6 listed as a substitute if it has 80A rating versus 50A?

A: STD80N4F6 is a functional alternative for applications where higher current capacity provides design margin or future scalability. The 40V voltage rating and TO-252-3 package remain compatible. However, the higher current rating does not make it a direct replacement; circuit thermal management and PCB layout may require adjustment to accommodate the different device characteristics.

Q: Is AOD4184A suitable for new product designs?

A: AOD4184A carries "Not For New Designs" status and should be used only for legacy system maintenance or repair. For new designs, select from active-status alternatives: IPD50N04S408ATMA1, IPD50N04S4L08ATMA1, SQD50N04-5M6L_GE3, or STD80N4F6.

Q: What does the TO-252-3 (DPAK) package designation mean?

A: TO-252-3 is a surface mount package with three leads: two signal leads (Gate and Source) plus one tab (Drain). DPAK is the industry abbreviation for this configuration. All listed substitutes use identical or equivalent package geometry, ensuring direct PCB footprint compatibility without layout modifications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts—IPD50N04S408ATMA1, IPD50N04S4L08ATMA1, AOD4184A, SQD50N04-5M6L_GE3, and STD80N4F6—are RoHS3 compliant with MSL Level 1 (unlimited moisture sensitivity). This ensures compatibility with modern manufacturing and environmental regulations.

Q: Which substitute offers the lowest on-resistance (RDS(on))?

A: SQD50N04-5M6L_GE3 from Vishay exhibits the lowest on-resistance at 5.6 mOhm (measured at 20A, 10V gate drive). This characteristic reduces conduction losses in high-current applications. However, this device has higher gate charge (75 nC) compared to IPD50N04S4L08ATMA1 (30 nC), which may increase switching losses.

Q: What is the significance of gate charge (Qg) in MOSFET substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (IPD50N04S4L08ATMA1 at 30 nC) reduces switching losses and allows faster switching speeds. Higher gate charge (FDD8453LZ at 64 nC, SQD50N04-5M6L_GE3 at 75 nC) may require stronger gate drive circuits. Selection depends on the application's switching frequency and thermal budget.

Q: Can I use STD80N4F6 in a circuit designed for 50A continuous current?

A: Yes. STD80N4F6 is rated for 80A continuous drain current at case temperature, providing 60% additional current capacity. This allows safe operation at the original 50A specification with improved thermal margin. No circuit modifications are required for direct substitution, though thermal management may be optimized.

Q: Are automotive-qualified parts (AEC-Q101) necessary for all applications?

A: AEC-Q101 qualification is required only for automotive applications subject to automotive industry standards. For industrial, consumer, or general-purpose applications, non-qualified parts are acceptable. IPD50N04S4L08ATMA1, SQD50N04-5M6L_GE3, and STD80N4F6 carry AEC-Q101 qualification; IPD50N04S408ATMA1 and AOD4184A do not.

Q: What is the maximum operating temperature difference between FDD8453LZ and its substitutes?

A: FDD8453LZ operates to 150°C junction temperature. All listed substitutes extend to 175°C, providing 25°C additional thermal headroom. This allows substitutes to operate safely in higher-temperature environments or with reduced thermal management requirements compared to the original part.

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