FDD6680A Equivalent & Substitute Parts

Part Overview

The FDD6680A is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 14A at Ta and 56A at Tc. The device is housed in a TO-252AA (DPAK) surface mount package and is part of the PowerTrench® series. The FDD6680A is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	14	A
Continuous Drain Current @ 25°C (Tc)	56	A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 14A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	3	V @ 250µA
Gate Charge (Qg) @ Vgs	20	nC @ 5V
Input Capacitance (Ciss) @ Vds	1425	pF @ 15V
Power Dissipation (Max) @ Ta	2.8	W
Power Dissipation (Max) @ Tc	60	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the FDD6680A is based on electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The following parameters establish substitution validity:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 30V minimum
Package Type: TO-252AA (DPAK) surface mount
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C (TJ)

Performance Parameters:

Continuous Drain Current: Minimum 13A at Ta
Rds On (Max): Within 9.5 mOhm specification
Gate Threshold Voltage: Within ±20V Vgs maximum rating
Input Capacitance: Compatible with circuit switching requirements

The FDD8880 meets all critical matching parameters and maintains electrical performance within acceptable tolerances for direct substitution in applications designed for the FDD6680A.

Parameter Comparison

Parameter	FDD6680A	FDD8880	Unit
Manufacturer	onsemi	onsemi	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	30	30	V
Continuous Drain Current @ Ta	14	13	A
Continuous Drain Current @ Tc	56	58	A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 14A, 10V	9 mOhm @ 35A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	3	2.5	V @ 250µA
Gate Charge (Qg) @ Vgs	20 nC @ 5V	31 nC @ 10V	nC
Input Capacitance (Ciss) @ Vds	1425 pF @ 15V	1260 pF @ 15V	pF
Vgs (Max)	±20	±20	V
Power Dissipation (Max) @ Tc	60	55	W
Operating Temperature Range	-55 to 175	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	TO-252-3 (DPAK)	Surface Mount
Series	PowerTrench®	PowerTrench®	—
Product Status	Obsolete	Active	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

The FDD8880 is the direct substitute for the obsolete FDD6680A. Both devices are manufactured by onsemi within the PowerTrench® series and share identical voltage ratings, package configuration, and thermal operating range.

Selection Basis:

The FDD8880 maintains active product status, ensuring long-term availability and supply chain continuity. Both parts carry REACH Unaffected compliance status and MSL Level 1 (Unlimited) moisture sensitivity rating, indicating equivalent environmental and handling requirements.

Electrical performance between the two devices is compatible for direct substitution. The FDD8880 demonstrates marginally improved on-resistance (9 mOhm versus 9.5 mOhm) and lower input capacitance (1260 pF versus 1425 pF), resulting in enhanced switching efficiency. The continuous drain current at Tc is slightly higher (58A versus 56A), providing additional thermal headroom in high-current applications.

Gate charge specification differs between the parts (31 nC at 10V for FDD8880 versus 20 nC at 5V for FDD6680A), reflecting measurement conditions at different gate voltages. Gate threshold voltage is lower for the FDD8880 (2.5V versus 3V), indicating faster turn-on characteristics.

For applications currently using the FDD6680A, the FDD8880 provides equivalent or superior performance across all critical parameters without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can the FDD8880 directly replace the FDD6680A in existing designs?

A: Yes. Both devices share identical Vdss (30V), package type (TO-252AA), operating temperature range (-55°C to 175°C), and Vgs maximum rating (±20V). Electrical performance is compatible for direct substitution without circuit redesign.

Q: What are the key differences between FDD6680A and FDD8880?

A: The FDD8880 is the active production equivalent. Primary differences include: FDD8880 has lower on-resistance (9 mOhm versus 9.5 mOhm), lower input capacitance (1260 pF versus 1425 pF), lower gate threshold voltage (2.5V versus 3V), and higher continuous drain current at Tc (58A versus 56A). Gate charge is specified at different measurement conditions (31 nC @ 10V versus 20 nC @ 5V).

Q: Are the packages identical?

A: Yes. Both the FDD6680A and FDD8880 use the TO-252-3 (DPAK) surface mount package with 2 leads plus tab configuration. Pin-to-pin compatibility is confirmed.

Q: What is the product status difference?

A: The FDD6680A is classified as obsolete, while the FDD8880 is active. The FDD8880 is recommended for new designs and ongoing production to ensure supply availability.

Q: Are there compliance or environmental differences?

A: No. Both parts carry identical REACH Unaffected status and MSL Level 1 (Unlimited) moisture sensitivity rating. Environmental and regulatory compliance requirements are equivalent.

Q: How do the thermal characteristics compare?

A: Both devices operate across the same temperature range (-55°C to 175°C TJ). The FDD8880 exhibits slightly lower power dissipation at Tc (55W versus 60W), providing marginal thermal advantage in high-power applications.

Q: Is gate drive voltage compatible?

A: Yes. Both devices specify ±20V maximum Vgs and operate with 4.5V and 10V drive voltage options. Gate drive circuits designed for the FDD6680A are compatible with the FDD8880.

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