FDD6676AS N-Channel MOSFET 30V 90A Equivalent & Substitute Parts

Part Overview

The FDD6676AS is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 90A continuous drain current in a Surface Mount TO-252AA package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing production support, design updates, and inventory management. The PowerTrench® series technology provides efficient switching performance in power conversion applications requiring high current handling in compact form factors.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	90	A
On-State Resistance (Rds On Max) @ 10V	5.7	mOhm
Gate Threshold Voltage (Vgs(th) Max)	3	V @ 1mA
Gate Charge (Qg Max) @ 10V	64	nC
Input Capacitance (Ciss Max) @ 15V	2500	pF
Power Dissipation (Max)	70	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-252-3, DPAK (2 Leads + Tab)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution of the FDD6676AS is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 30V
Package Type: TO-252-3 (DPAK) Surface Mount
FET Type: N-Channel MOSFET
Continuous Drain Current (Id): Minimum 90A or equivalent thermal performance
On-State Resistance (Rds On): Comparable performance at rated gate voltage
Operating Temperature Range: Minimum -55°C to 150°C
Moisture Sensitivity Level: MSL 1 or better

The substitute parts identified—DMN3009SK3-13 and IRFR3709ZTRLPBF—meet these core electrical and mechanical requirements. Both devices share the same 30V Vdss rating, identical package configuration, and compatible gate drive characteristics. Variations in continuous drain current rating, on-state resistance, and power dissipation reflect different thermal measurement conditions (Ta vs. Tc) and manufacturing process technology but remain functionally compatible within the specified parameter envelope.

Parameter Comparison

Parameter	FDD6676AS (onsemi)	DMN3009SK3-13 (Diodes Inc.)	IRFR3709ZTRLPBF (Infineon)	Unit
Drain to Source Voltage (Vdss)	30	30	30	V
Continuous Drain Current (Id) @ 25°C	90 (Ta)	80 (Tc)	86 (Tc)	A
Rds On (Max) @ 10V	5.7 @ 16A	5.5 @ 30A	6.5 @ 15A	mOhm
Gate Threshold Voltage (Vgs(th) Max)	3 @ 1mA	2.5 @ 250µA	2.25 @ 250µA	V
Gate Charge (Qg Max) @ 10V	64	42	26 @ 4.5V	nC
Input Capacitance (Ciss Max) @ 15V	2500	2000	2330	pF
Power Dissipation (Max)	70 (Ta)	3.4 (Ta)	79 (Tc)	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	TO-252 (DPAK)	TO-252-3 (DPAK)	Surface Mount
Vgs (Max)	±20	±20	±20	V
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	MSL

Engineering Selection Recommendations

FDD6676AS (onsemi) — Primary Reference Product Status: Obsolete. This part is no longer in active production. Designs currently using this device require transition planning to an active substitute.

DMN3009SK3-13 (Diodes Incorporated) — Active Substitute Product Status: Active. This device is in current production and recommended for new designs and production transitions. RoHS3 Compliant certification ensures regulatory compliance. The 80A continuous drain current rating (measured at Tc) provides functional equivalence to the FDD6676AS within standard application margins. Lower gate charge (42 nC) and input capacitance (2000 pF) offer improved switching efficiency compared to the primary part.

IRFR3709ZTRLPBF (Infineon Technologies) — Secondary Substitute Product Status: Not For New Designs. This part is in limited production and not recommended for new design implementations. RoHS3 Compliant certification is maintained. The 86A continuous drain current rating (measured at Tc) and extended operating temperature range (-55°C to 175°C) provide performance headroom. Significantly lower gate charge (26 nC @ 4.5V) enables faster switching transitions. This device is suitable for legacy system support and replacement inventory only.

Compliance & Certification: All three devices share identical REACH Status (REACH Unaffected), ECCN classification (EAR99), and HTSUS code (8541.29.0095). Both substitute parts maintain MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard handling and storage procedures.

Frequently Asked Questions (FAQ)

Q: Can DMN3009SK3-13 directly replace FDD6676AS in existing designs? A: Yes. Both devices share identical 30V Vdss rating, TO-252 DPAK package configuration, and compatible gate drive voltage range (±20V). The 80A continuous drain current of the DMN3009SK3-13 (measured at Tc) provides functional equivalence to the 90A rating of the FDD6676AS (measured at Ta). Thermal management and PCB layout remain unchanged.

Q: What is the difference between Ta and Tc current ratings? A: Ta (ambient temperature) and Tc (case temperature) represent different measurement reference points for continuous drain current. Tc-based ratings typically reflect higher current capability at the same junction temperature. Both measurement standards are valid; application thermal design determines which rating applies to your specific use case.

Q: Is IRFR3709ZTRLPBF suitable for new production designs? A: No. IRFR3709ZTRLPBF carries a "Not For New Designs" status, indicating limited production availability and no long-term supply commitment. This device is appropriate only for legacy system support and replacement inventory. DMN3009SK3-13 is the recommended choice for new designs.

Q: Do all three devices require identical PCB footprints? A: Yes. All three devices use the TO-252-3 (DPAK) package with identical pin configuration and mechanical dimensions. No PCB layout modifications are required for substitution.

Q: What is the significance of the lower gate charge in IRFR3709ZTRLPBF? A: Lower gate charge (26 nC @ 4.5V vs. 64 nC @ 10V in FDD6676AS) reduces the charge required to switch the device on and off. This enables faster switching transitions and lower gate drive power consumption. However, this advantage does not override the "Not For New Designs" status for production applications.

Q: Are there any compliance or regulatory differences between the three devices? A: No. All three devices share identical REACH Status (REACH Unaffected), ECCN classification (EAR99), and HTSUS code (8541.29.0095). Both substitute parts are RoHS3 Compliant. Regulatory compliance is equivalent across all three devices.

Q: What is the impact of different on-state resistance (Rds On) values? A: On-state resistance directly affects power dissipation and thermal performance. The FDD6676AS specifies 5.7 mOhm @ 16A, 10V; DMN3009SK3-13 specifies 5.5 mOhm @ 30A, 10V; and IRFR3709ZTRLPBF specifies 6.5 mOhm @ 15A, 10V. These variations reflect different measurement conditions and manufacturing processes. All values remain within acceptable ranges for 30V MOSFET applications. Thermal analysis of your specific application determines whether these differences are significant.

Q: Can I use IRFR3709ZTRLPBF for legacy system repairs? A: Yes. IRFR3709ZTRLPBF is suitable for replacement and repair of existing systems currently using FDD6676AS. The identical package, voltage rating, and compatible electrical characteristics ensure functional compatibility. Verify thermal performance in your specific application context.

Q: What is the moisture sensitivity level (MSL) and why does it matter? A: MSL 1 (Unlimited) indicates the device has unlimited shelf life and requires no special moisture control during storage or handling. All three devices carry this rating, ensuring compatibility with standard component handling procedures and eliminating moisture-related reliability concerns.

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