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FDD6635 Equivalent & Substitute Parts
Part Overview
The FDD6635 is an N-Channel MOSFET manufactured by onsemi, rated for 35V drain-to-source voltage with continuous drain current of 15A at Ta and 59A at Tc. This device features the PowerTrench® technology platform and is packaged in a Surface Mount TO-252AA (DPAK) configuration. The FDD6635 is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical and mechanical compatibility while meeting current component availability and compliance standards.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 35 | V |
| Continuous Drain Current @ 25°C | 15A (Ta), 59A (Tc) | A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 15A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) | 3 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 36 | nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1400 | pF @ 20V |
| Power Dissipation (Max) | 3.8W (Ta), 55W (Tc) | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the FDD6635 is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- FET Type: Must be N-Channel MOSFET
- Drain to Source Voltage (Vdss): Substitute must equal or exceed 35V
- Continuous Drain Current: Substitute must support equivalent or higher current ratings
- On-State Resistance (Rds On): Substitute must not exceed the original specification to maintain thermal performance
- Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
- Operating Temperature Range: Must encompass or exceed the original range
Mechanical Compatibility Criteria:
- Mounting Type: Surface Mount required
- Package / Case: TO-252-3 DPAK (2 Leads + Tab) configuration required
- Pin configuration: Must maintain electrical equivalence
Compliance & Status Criteria:
- RoHS3 Compliance required
- MSL Level 1 (Unlimited) required
- Active product status preferred for long-term availability
The STD95N4LF3 meets these substitution criteria through equivalent package configuration, superior electrical ratings, and active product status.
Parameter Comparison
| Parameter | FDD6635 (onsemi) | STD95N4LF3 (STMicroelectronics) | Unit |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 35 | 40 | V |
| Continuous Drain Current @ 25°C | 15A (Ta), 59A (Tc) | 80A (Tc) | A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 15A, 10V | 6 mOhm @ 40A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) | 3 | 2.5 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 36 | 70 | nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1400 | 2500 | pF @ 20V / 25V |
| Power Dissipation (Max) | 3.8W (Ta), 55W (Tc) | 110W (Tc) | W |
| Operating Temperature Range | -55 to 150 | -55 to 175 | °C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
Primary Substitute: STD95N4LF3
The STD95N4LF3 is the qualified substitute for the FDD6635 based on the following engineering criteria:
Electrical Compatibility: The STD95N4LF3 exceeds the FDD6635 electrical specifications across all critical parameters. The 40V Vdss rating provides margin above the 35V requirement. The 80A continuous drain current (Tc) substantially exceeds the 59A (Tc) rating of the FDD6635, enabling operation in higher-current applications. The 6 mOhm on-state resistance at 40A, 10V is superior to the 10 mOhm specification of the FDD6635, resulting in lower power dissipation and improved thermal performance. The maximum power dissipation of 110W (Tc) provides significant thermal headroom compared to the 55W (Tc) rating of the original device.
Mechanical Compatibility: Both devices utilize identical Surface Mount packaging: TO-252-3 DPAK (2 Leads + Tab) configuration. Pin-to-pin compatibility is maintained, enabling direct substitution without PCB layout modifications.
Compliance & Availability: The STD95N4LF3 holds active product status with 5210 units in stock, ensuring long-term availability and supply chain continuity. Both devices maintain ROHS3 compliance and MSL Level 1 (Unlimited) ratings. The STD95N4LF3 supports an extended operating temperature range of -55°C to 175°C (TJ), exceeding the FDD6635 range of -55°C to 150°C (TJ).
Application Suitability: The STD95N4LF3 is suitable for direct replacement in all applications where the FDD6635 was previously specified. The superior electrical performance enables operation in higher-current or higher-power-dissipation scenarios without thermal derating.
Frequently Asked Questions (FAQ)
Q: Can the STD95N4LF3 be used as a direct pin-for-pin replacement for the FDD6635?
A: Yes. Both devices utilize the TO-252-3 DPAK (2 Leads + Tab) package configuration with identical pin assignments. No PCB layout modifications are required for substitution.
Q: What are the key electrical differences between the FDD6635 and STD95N4LF3?
A: The STD95N4LF3 provides higher voltage rating (40V vs. 35V), higher continuous drain current (80A vs. 59A at Tc), lower on-state resistance (6 mOhm vs. 10 mOhm), and higher power dissipation capability (110W vs. 55W at Tc). These improvements enable operation in higher-current applications with reduced thermal stress.
Q: Are there any gate drive circuit compatibility concerns when substituting the STD95N4LF3 for the FDD6635?
A: Gate drive compatibility is maintained. The STD95N4LF3 gate threshold voltage is 2.5V compared to 3V for the FDD6635, representing a minor reduction that does not impact standard gate drive circuits. The maximum gate voltage rating of ±16V for the STD95N4LF3 is slightly lower than the ±20V rating of the FDD6635, but this does not affect compatibility with standard ±10V or ±15V gate drive supplies.
Q: What is the impact of higher gate charge (70 nC vs. 36 nC) on circuit performance?
A: The higher gate charge of the STD95N4LF3 results in slightly longer switching times and marginally increased gate drive power consumption. This does not prevent substitution but should be considered in high-frequency switching applications where gate drive efficiency is critical.
Q: Does the higher input capacitance (2500 pF vs. 1400 pF) of the STD95N4LF3 affect circuit operation?
A: The higher input capacitance may increase gate drive current requirements and switching losses in high-frequency applications. Circuit performance should be verified in applications operating above 100 kHz switching frequency.
Q: Is the FDD6635 still available for new designs?
A: No. The FDD6635 is classified as obsolete. The STD95N4LF3 is the recommended substitute for all new designs and ongoing production. The STD95N4LF3 is actively manufactured and maintained in inventory.
Q: What compliance certifications apply to the STD95N4LF3?
A: The STD95N4LF3 is ROHS3 compliant, REACH unaffected, and classified as MSL Level 1 (Unlimited). These certifications match the FDD6635 compliance profile.
Q: Can the STD95N4LF3 operate at the full 175°C junction temperature in all applications?
A: The STD95N4LF3 is rated for operation to 175°C (TJ). Actual operating temperature depends on power dissipation, thermal resistance of the package, and PCB thermal design. Thermal analysis specific to the application circuit is required to confirm safe operation at elevated temperatures.
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