FDD6606 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDD6606 is an N-Channel 30V 75A MOSFET manufactured by onsemi in the PowerTrench® series, housed in a TO-252AA (DPAK) surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design continuity. The FDD6606 delivers 71W maximum power dissipation and operates across a temperature range of -55°C to 175°C, serving applications requiring moderate to high current switching at 30V drain-source voltage levels.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	75	A (Ta)
Rds On (Max) @ Id, Vgs	6	mOhm @ 17A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	3	V @ 250µA
Gate Charge (Qg) @ Vgs	31	nC @ 5V
Input Capacitance (Ciss) @ Vds	2400	pF @ 15V
Power Dissipation (Max)	71	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3, DPAK	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FDD6606 is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must span -55°C to 175°C
Gate Voltage (Vgs Max): Must support ±20V

Mechanical Compatibility Criteria:

Package Type: Must be TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type: Must be Surface Mount

Performance Parameters for Substitution:

Continuous Drain Current (Id): Substitute must support minimum 75A at rated conditions
Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation (Max): Must support thermal requirements of the application

Substitute parts are grouped into two categories: Direct Equivalents (matching all critical parameters) and Similar Alternatives (meeting electrical and mechanical requirements with performance variations).

Parameter Comparison

Parameter	FDD6606 (Main)	FDD8896	IPD060N03LGATMA1	IPD075N03LGATMA1	IPD50N03S2L06ATMA1	IRLR8726TRLPBF
Manufacturer	onsemi	Fairchild Semiconductor	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	75 (Ta)	17 (Ta) / 94 (Tc)	50 (Tc)	50 (Tc)	50 (Tc)	86 (Tc)
Rds On (Max) (mOhm)	6 @ 17A, 10V	5.7 @ 35A, 10V	6 @ 30A, 10V	7.5 @ 30A, 10V	6.4 @ 50A, 10V	5.8 @ 25A, 10V
Vgs(th) (Max) (V)	3 @ 250µA	2.5 @ 250µA	2.2 @ 250µA	2.2 @ 250µA	2 @ 85µA	2.35 @ 50µA
Qg (Max) (nC)	31 @ 5V	60 @ 10V	23 @ 10V	18 @ 10V	68 @ 10V	23 @ 4.5V
Ciss (Max) (pF)	2400 @ 15V	2525 @ 15V	2400 @ 15V	1900 @ 15V	1900 @ 25V	2150 @ 15V
Power Dissipation (Max) (W)	71 (Tc)	80 (Tc)	56 (Tc)	47 (Tc)	136 (Tc)	75 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-252AA (DPAK)	TO-252 (DPAK)	PG-TO252-3	PG-TO252-3-11	PG-TO252-3-11	TO-252AA (DPAK)
Product Status	Obsolete	Active	Active	Active	Active	Not For New Designs
Series	PowerTrench®	PowerTrench®	OptiMOS™	OptiMOS™	OptiMOS™	HEXFET®

Engineering Selection Recommendations

FDD8896 (Fairchild Semiconductor) The FDD8896 is an active product offering improved thermal performance with 80W maximum power dissipation compared to the FDD6606's 71W. It maintains the same 30V Vdss rating and TO-252 DPAK package. The continuous drain current specification differs between ambient (17A Ta) and case temperature (94A Tc) ratings. This part is suitable for direct replacement in applications where the higher power dissipation capability is beneficial. Both devices share the PowerTrench® series designation.

IPD060N03LGATMA1 (Infineon Technologies) The IPD060N03LGATMA1 is an active OptiMOS™ series device rated for 50A continuous drain current at case temperature. It matches the 30V Vdss requirement and operates across the full -55°C to 175°C temperature range. The 56W power dissipation is lower than the FDD6606, making it suitable for applications with reduced thermal headroom. This part is RoHS3 compliant and carries REACH Unaffected status. Gate charge is reduced to 23nC, improving switching efficiency.

IPD075N03LGATMA1 (Infineon Technologies) The IPD075N03LGATMA1 is an active OptiMOS™ series device with 50A continuous drain current rating and 47W maximum power dissipation. It features the lowest gate charge (18nC) among the Infineon substitutes, reducing switching losses. The input capacitance is reduced to 1900pF, further improving high-frequency performance. This part is RoHS3 compliant and REACH Unaffected. Selection is appropriate for applications prioritizing switching speed and efficiency over power dissipation capability.

IPD50N03S2L06ATMA1 (Infineon Technologies) The IPD50N03S2L06ATMA1 is an active OptiMOS™ series device with automotive-grade qualification (AEC-Q101). It delivers the highest power dissipation capability at 136W (Tc) and supports 50A continuous drain current. The gate threshold voltage is the lowest at 2V, and it supports the highest gate charge at 68nC. This part is suitable for automotive applications and high-power dissipation scenarios. RoHS3 compliant and REACH Unaffected status apply.

IRLR8726TRLPBF (Infineon Technologies) The IRLR8726TRLPBF is a HEXFET® series device rated for 86A continuous drain current at case temperature, exceeding the FDD6606's 75A specification. It maintains 30V Vdss and 75W power dissipation matching the original part. The product status is "Not For New Designs," indicating it is suitable for legacy system maintenance and replacement but not recommended for new development. Gate charge is 23nC at 4.5V, supporting efficient switching. RoHS3 compliant and REACH Unaffected.

Frequently Asked Questions (FAQ)

Q: Can the FDD6606 be replaced with any of these substitute parts in existing designs?

A: Substitution depends on application-specific requirements. All listed substitutes maintain the 30V Vdss rating, N-Channel MOSFET technology, and TO-252 DPAK package compatibility. However, differences in continuous drain current ratings, power dissipation, and gate charge characteristics must be evaluated against circuit requirements. The FDD8896 and IRLR8726TRLPBF offer the closest current and power dissipation alignment to the original FDD6606.

Q: What is the significance of the different drain current ratings (Ta vs. Tc)?

A: Drain current ratings at ambient temperature (Ta) represent performance under standard test conditions (typically 25°C ambient). Drain current ratings at case temperature (Tc) reflect performance when the device case reaches elevated temperatures. The FDD6606 specifies 75A at Ta, while some substitutes provide ratings at Tc. Thermal management and application environment determine which rating is most relevant for design validation.

Q: Why do some substitutes have lower continuous drain current ratings than the FDD6606?

A: The IPD060N03LGATMA1, IPD075N03LGATMA1, and IPD50N03S2L06ATMA1 are rated for 50A continuous drain current, which is lower than the FDD6606's 75A. These devices may still be suitable if the application does not require the full 75A capability. However, applications demanding the full 75A specification should prioritize the FDD8896 (94A Tc) or IRLR8726TRLPBF (86A Tc).

Q: What does "Not For New Designs" mean for the IRLR8726TRLPBF?

A: "Not For New Designs" indicates that while the IRLR8726TRLPBF remains available and functional, the manufacturer does not recommend its use in new product development. This status typically reflects the availability of newer alternatives with improved performance or features. The part remains suitable for replacement in existing systems and legacy applications.

Q: Are all substitute parts RoHS3 compliant?

A: The Infineon OptiMOS™ series parts (IPD060N03LGATMA1, IPD075N03LGATMA1, IPD50N03S2L06ATMA1) and IRLR8726TRLPBF are explicitly RoHS3 compliant. The FDD8896 compliance status is not specified in the provided data. Verify RoHS compliance requirements with your specific application and regulatory environment.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IPD075N03LGATMA1 offers the lowest gate charge at 18nC, while the IPD50N03S2L06ATMA1 has the highest at 68nC. Selection depends on whether the application prioritizes switching speed and efficiency or other performance characteristics.

Q: Can package variations between TO-252AA and PG-TO252-3 affect substitution?

A: All listed substitutes use TO-252-3 DPAK package variants (TO-252AA, PG-TO252-3, PG-TO252-3-11), which are mechanically and electrically compatible for surface mount applications. These designations reflect minor variations in supplier packaging specifications but do not affect PCB footprint compatibility or electrical performance.

Q: Which substitute is best for automotive applications?

A: The IPD50N03S2L06ATMA1 carries automotive-grade qualification (AEC-Q101), making it the specified choice for automotive applications. This qualification ensures the device meets automotive industry reliability and performance standards. Other substitutes may be suitable for automotive use depending on specific application requirements and qualification protocols.

Q: What is the REACH status significance for all these parts?

A: All listed parts carry "REACH Unaffected" status, indicating they are not subject to REACH (Registration, Evaluation, Authorization and Restriction of Chemicals) regulatory restrictions. This status applies uniformly across all substitutes and the original FDD6606, simplifying compliance documentation for international applications.

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