FDD6296 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDD6296 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series, housed in a TO-252AA (DPAK) surface mount package. This device is rated for 15A continuous drain current at 25°C ambient temperature and 50A at case temperature, with a maximum power dissipation of 52W at case temperature. The FDD6296 is classified as obsolete, making identification of functionally equivalent substitute parts necessary for ongoing design support and production continuity.

Key Parameters

Parameter	FDD6296 Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	15	A
Continuous Drain Current @ Case (Tc)	50	A
Rds On (Max) @ 15A, 10V	8.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.0	V
Gate Charge (Qg) @ 10V	31.5	nC
Input Capacitance (Ciss) @ 15V	1440	pF
Power Dissipation (Max) @ Case	52	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3 (DPAK)	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitution of the FDD6296 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 30V minimum
Package Type: TO-252-3 (DPAK) surface mount configuration
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C
Gate Voltage Rating (Vgs Max): ±16V to ±20V

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Tc): 50A or greater
Rds On (Max): 8.8mOhm or lower at rated conditions
Gate Charge (Qg): 31.5nC or lower
Input Capacitance (Ciss): 1440pF or lower

Substitute parts are grouped into two categories: direct onsemi PowerTrench® series alternatives and cross-manufacturer Infineon OptiMOS™ series alternatives. All candidates maintain the same voltage rating, package footprint, and thermal operating range.

Parameter Comparison

Parameter	FDD6296	FDD8876	FDD8880	IPD30N03S4L09ATMA1	IPD090N03LGATMA1	IPD40N03S4L08ATMA1
Manufacturer	onsemi	onsemi	onsemi	Infineon	Infineon	Infineon
Vdss (V)	30	30	30	30	30	30
Id @ 25°C Ta (A)	15	15	13	-	-	-
Id @ Case Tc (A)	50	73	58	30	40	40
Rds On (Max) (mOhm)	8.8 @ 15A	8.2 @ 35A	9.0 @ 35A	9.0 @ 30A	9.0 @ 30A	8.3 @ 40A
Vgs(th) (Max) @ 250µA (V)	3.0	2.5	2.5	2.2	2.2	2.2
Gate Charge Qg @ 10V (nC)	31.5	47	31	20	15	20
Ciss @ 15V (pF)	1440	1700	1260	1520	1600	1520
Power Dissipation Max (W)	52 (Tc)	70 (Tc)	55 (Tc)	42 (Tc)	42 (Tc)	42 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-252-3	TO-252-3	TO-252-3	TO-252-3	TO-252-3	TO-252-3
Product Status	Obsolete	Obsolete	Active	Active	Active	Discontinued at DiGi Electronics
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Recommendation: FDD8880

The FDD8880 is the preferred substitute for the FDD6296. Both devices are onsemi PowerTrench® series MOSFETs with identical 30V voltage ratings and TO-252-3 package configurations. The FDD8880 maintains continuous drain current capability of 58A at case temperature, exceeding the FDD6296's 50A rating. Gate charge and input capacitance parameters are comparable, ensuring compatible drive circuit performance. Critically, the FDD8880 holds Active product status, providing long-term availability and production support. RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) match the original device specifications.

Secondary Recommendation: FDD8876

The FDD8876 offers enhanced performance with 73A continuous drain current at case temperature and improved Rds On characteristics (8.2mOhm versus 8.8mOhm). However, this device is also classified as Obsolete, limiting its suitability for new designs requiring long-term component availability. The FDD8876 is appropriate only when existing inventory is available and production volumes do not require ongoing supplier support.

Cross-Manufacturer Alternatives: Infineon OptiMOS™ Series

The IPD30N03S4L09ATMA1 and IPD090N03LGATMA1 from Infineon Technologies provide functionally equivalent substitution with Active product status. Both devices maintain the 30V voltage rating and TO-252-3 package footprint. The IPD090N03LGATMA1 delivers 40A continuous drain current at case temperature with lower gate charge (15nC) and improved switching characteristics. The IPD30N03S4L09ATMA1 provides 30A continuous drain current with 20nC gate charge. These Infineon devices are suitable for applications where cross-manufacturer qualification is acceptable and long-term availability is required.

The IPD40N03S4L08ATMA1 is not recommended despite its 40A rating and superior Rds On performance (8.3mOhm), as it is classified as Discontinued at DiGi Electronics and carries automotive-grade qualification (AEC-Q101) that may introduce unnecessary cost and lead time constraints for non-automotive applications.

Frequently Asked Questions (FAQ)

Q: Can the FDD8880 directly replace the FDD6296 without circuit modifications?

A: Yes. Both devices share identical 30V voltage ratings, TO-252-3 package configurations, and operating temperature ranges (-55°C to 175°C). Gate threshold voltage, gate charge, and input capacitance parameters are sufficiently similar to ensure compatible performance in existing drive circuits. No PCB layout changes are required.

Q: What is the primary reason the FDD6296 requires substitution?

A: The FDD6296 is classified as Obsolete. Substitute parts are necessary to ensure production continuity and long-term component availability. The FDD8880 provides equivalent functionality with Active product status.

Q: Are Infineon OptiMOS™ devices (IPD series) pin-compatible with the onsemi FDD6296?

A: Yes. All substitute parts listed maintain the TO-252-3 (DPAK) package configuration with identical pin assignments: Gate, Drain, and Source. Physical footprint compatibility is confirmed across all candidates.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The FDD6296 specifies 31.5nC at 10V. The FDD8880 specifies 31nC, providing equivalent switching performance. Infineon devices specify lower gate charge (15-20nC), resulting in faster switching transitions and reduced drive circuit power consumption. Lower gate charge is beneficial but not required for direct substitution.

Q: What is the significance of Rds On (on-state resistance) differences?

A: Rds On determines conduction losses and heat generation. The FDD6296 specifies 8.8mOhm at 15A and 10V gate voltage. The FDD8876 specifies 8.2mOhm at 35A, and the IPD40N03S4L08ATMA1 specifies 8.3mOhm at 40A. Lower Rds On values reduce power dissipation and thermal stress. All listed substitutes maintain Rds On within acceptable ranges for equivalent thermal performance.

Q: Why does the FDD8876 show higher gate charge (47nC) than the FDD6296 (31.5nC)?

A: Gate charge correlates with die size and current-handling capability. The FDD8876 is rated for 73A at case temperature versus the FDD6296's 50A, requiring a larger die and higher gate charge. This difference does not prevent substitution but may require drive circuit verification if gate charge margins are critical.

Q: Is the IPD40N03S4L08ATMA1 suitable for non-automotive applications?

A: The IPD40N03S4L08ATMA1 carries automotive-grade qualification (AEC-Q101) and is classified as Discontinued at DiGi Electronics. While electrically compatible, this device is not recommended for new designs due to discontinued status and potential cost premiums associated with automotive qualification. The IPD090N03LGATMA1 or IPD30N03S4L09ATMA1 are preferred for cross-manufacturer substitution.

Q: What compliance certifications apply to all substitute parts?

A: All listed devices are RoHS3 compliant and REACH unaffected. Moisture sensitivity level is MSL 1 (Unlimited) for all parts, indicating no special storage or handling requirements. ECCN classification is EAR99 for all devices.

Q: Can I use a substitute part with lower continuous drain current rating?

A: No. The FDD6296 is rated for 50A continuous drain current at case temperature. Substitute parts must meet or exceed this rating to ensure equivalent thermal performance and current-handling capability. The FDD8880 (58A), FDD8876 (73A), IPD090N03LGATMA1 (40A), and IPD40N03S4L08ATMA1 (40A) all meet this requirement. The IPD30N03S4L09ATMA1 (30A) does not meet the 50A requirement and is not suitable for direct substitution in current-limited applications.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: Ta (ambient temperature) ratings assume operation in free air at 25°C without forced cooling. Tc (case temperature) ratings assume the device case is maintained at 25°C through active cooling or thermal management. The FDD6296 specifies 15A at Ta and 50A at Tc. Tc ratings are typically used for design calculations when thermal management is implemented. All substitute parts use identical Ta/Tc rating conventions.

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