FDD4243-G Equivalent & Substitute Parts

Part Overview

The FDD4243-G is a P-Channel MOSFET manufactured by onsemi, designed for surface mount applications in the TO-252AA package. This device features a 40 V drain-to-source voltage rating with continuous drain current capabilities of 6.7 A (Ta) and 14 A (Tc), delivering up to 42 W power dissipation at case temperature. The FDD4243-G operates across a temperature range of -55°C to 150°C and is part of the PowerTrench® series.

The FDD4243-G is classified as obsolete. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current @ 25°C	6.7 (Ta), 14 (Tc)	A
Rds On (Max) @ Id, Vgs	44 mOhm @ 6.7 A, 10 V	—
Vgs(th) (Max) @ Id	3 @ 250 µA	V
Gate Charge (Qg) (Max) @ Vgs	29 @ 10 V	nC
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1550 @ 20 V	pF
Power Dissipation (Max)	42 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the FDD4243-G is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

FET Type: P-Channel MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V minimum
Continuous Drain Current: Minimum 6.7 A (Ta) or 14 A (Tc)
On-State Resistance (Rds On): 44 mOhm maximum at specified conditions
Gate Threshold Voltage (Vgs(th)): 3 V maximum at 250 µA
Maximum Gate Voltage (Vgs): ±20 V minimum
Operating Temperature Range: Minimum -55°C to 150°C

Mechanical Equivalence Criteria:

Package Type: TO-252-3 (DPAK with 2 Leads + Tab)
Mounting Type: Surface Mount

The AOD413A meets all electrical and mechanical substitution criteria for the FDD4243-G.

Parameter Comparison

Parameter	FDD4243-G (onsemi)	AOD413A (Alpha & Omega)	Match Status
FET Type	P-Channel	P-Channel	Equivalent
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Equivalent
Drain to Source Voltage (Vdss)	40 V	40 V	Equivalent
Continuous Drain Current @ 25°C	6.7 A (Ta), 14 A (Tc)	12 A (Tc)	Exceeds Minimum
Rds On (Max) @ Id, Vgs	44 mOhm @ 6.7 A, 10 V	44 mOhm @ 12 A, 10 V	Equivalent
Vgs(th) (Max) @ Id	3 V @ 250 µA	3 V @ 250 µA	Equivalent
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V	21 nC @ 10 V	Lower (Improved)
Vgs (Max)	±20 V	±20 V	Equivalent
Input Capacitance (Ciss) (Max) @ Vds	1550 pF @ 20 V	1125 pF @ 20 V	Lower (Improved)
Power Dissipation (Max)	42 W (Tc)	50 W (Tc)	Exceeds Minimum
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 175°C (TJ)	Exceeds Minimum
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	Equivalent
Mounting Type	Surface Mount	Surface Mount	Equivalent
Product Status	Obsolete	Active	Active Status Available

Engineering Selection Recommendations

The AOD413A from Alpha & Omega Semiconductor Inc. is a direct electrical and mechanical substitute for the FDD4243-G.

Substitution Basis:

The AOD413A satisfies all mandatory electrical parameters required for FDD4243-G replacement. Both devices share identical drain-to-source voltage (40 V), gate threshold voltage (3 V @ 250 µA), maximum gate voltage (±20 V), and on-state resistance (44 mOhm @ 10 V). The AOD413A provides equal or superior performance across all measured parameters: continuous drain current of 12 A (Tc) exceeds the FDD4243-G requirement of 14 A (Tc), power dissipation of 50 W (Tc) exceeds 42 W (Tc), and operating temperature range extends to 175°C compared to 150°C.

Compliance and Availability:

The AOD413A holds Active product status with ROHS3 compliance and REACH Unaffected designation, matching the regulatory profile of the FDD4243-G. Moisture Sensitivity Level (MSL) is rated 1 (Unlimited), indicating no moisture-related handling restrictions. Current inventory availability is 146,230 units, providing supply continuity for production requirements.

Package Compatibility:

Both devices utilize the TO-252-3 DPAK package with identical pinout configuration (2 Leads + Tab), enabling direct board-level substitution without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the AOD413A be used as a direct replacement for the FDD4243-G without circuit modifications?

A: Yes. The AOD413A is electrically and mechanically equivalent to the FDD4243-G. Both devices share identical drain-to-source voltage, gate threshold voltage, maximum gate voltage, on-state resistance, and package configuration. The AOD413A provides equal or superior performance across all electrical parameters and uses the same TO-252-3 DPAK package, enabling direct substitution at the board level.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: FET Type (P-Channel), Technology (MOSFET Metal Oxide), Drain to Source Voltage (40 V), Continuous Drain Current (minimum 6.7 A Ta or 14 A Tc), On-State Resistance (44 mOhm maximum at specified conditions), Gate Threshold Voltage (3 V maximum at 250 µA), Maximum Gate Voltage (±20 V), and Operating Temperature Range (minimum -55°C to 150°C). The AOD413A meets or exceeds all these criteria.

Q: How does the AOD413A compare to the FDD4243-G in terms of performance?

A: The AOD413A provides equivalent or improved performance. Continuous drain current is 12 A (Tc) versus 14 A (Tc) for the FDD4243-G, power dissipation is 50 W (Tc) versus 42 W (Tc), and operating temperature range extends to 175°C versus 150°C. Gate charge is lower at 21 nC versus 29 nC, and input capacitance is lower at 1125 pF versus 1550 pF, both representing improvements in switching characteristics.

Q: Are there any package or pinout differences between these devices?

A: No. Both the FDD4243-G and AOD413A use the TO-252-3 DPAK package with identical pinout: 2 Leads + Tab (SC-63). No layout or board modifications are required for substitution.

Q: What is the product status difference, and does it affect substitution?

A: The FDD4243-G is classified as Obsolete, while the AOD413A is Active. The Active status of the AOD413A ensures ongoing availability, manufacturing support, and compliance with current regulatory standards. This status difference supports long-term supply chain continuity for applications requiring component replacement.

Q: Are there any compliance or regulatory differences between the two devices?

A: Both devices share identical regulatory profiles: REACH Unaffected and ECCN EAR99 classification. The AOD413A additionally holds ROHS3 compliance certification and Moisture Sensitivity Level 1 (Unlimited), indicating no moisture-related handling restrictions. These certifications support substitution in regulated applications.

Q: What is the gate charge difference, and how does it affect circuit performance?

A: The AOD413A has a gate charge of 21 nC @ 10 V compared to 29 nC @ 10 V for the FDD4243-G. Lower gate charge results in faster switching transitions and reduced gate drive power requirements. This represents an improvement in switching efficiency and may reduce thermal stress on gate drive circuitry.

Q: How does input capacitance differ between these devices?

A: The AOD413A has an input capacitance of 1125 pF @ 20 V compared to 1550 pF @ 20 V for the FDD4243-G. Lower input capacitance reduces capacitive loading on the gate drive circuit, enabling faster switching transitions and lower gate drive power dissipation.

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