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FDD3580 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The FDD3580 is an N-Channel MOSFET manufactured by onsemi, rated for 80V drain-to-source voltage with 7.7A continuous drain current at 25°C. The device is housed in a TO-252AA (DPAK) surface mount package and features the PowerTrench® technology platform. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | FDD3580 Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 80 | V |
| Continuous Drain Current @ 25°C (Id) | 7.7 (Ta) | A |
| On-Resistance @ 7.7A, 10V (Rds On) | 29 | mOhm |
| Gate Threshold Voltage @ 250µA (Vgs(th)) | 4 | V |
| Gate Charge @ 10V (Qg) | 49 | nC |
| Input Capacitance @ 40V (Ciss) | 1760 | pF |
| Power Dissipation (Ta) | 3.8 | W |
| Power Dissipation (Tc) | 42 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-252-3 (DPAK) | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the FDD3580 is determined by the following critical parameters:
Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 80V. Parts rated at 100V or 105V are acceptable as they provide voltage margin while maintaining functional compatibility.
Current Rating Compatibility: Substitute parts must support continuous drain current at or above 7.7A at 25°C ambient temperature. Higher current ratings (25A, 35A, 40A) are acceptable as they indicate superior thermal performance and current handling capability.
On-Resistance (Rds On): Substitute parts must have Rds On values at 10V gate drive that do not exceed the original specification by more than 50% to maintain circuit performance characteristics. Values between 24–38 mOhm are acceptable.
Package Compatibility: All substitute parts must use the TO-252-3 (DPAK) surface mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts.
Operating Temperature Range: Substitute parts must support the full -55°C to 175°C operating range to maintain reliability across all application conditions.
Gate Threshold Voltage: Substitute parts must have Vgs(th) values between 2.5V and 4.5V to ensure compatible gate drive requirements with standard PWM controllers and driver circuits.
Parameter Comparison
| Parameter | FDD3580 | STD25NF10LT4 | STD25NF10T4 | STD25N10F7 | SUD35N10-26P-GE3 | AOD2910 | AOD4126 | AOD464 | SQD40N10-25_GE3 | IPD25CN10NGATMA1 |
|---|---|---|---|---|---|---|---|---|---|---|
| Vdss (V) | 80 | 100 | 100 | 100 | 100 | 100 | 100 | 105 | 100 | 100 |
| Id @ 25°C (A) | 7.7 (Ta) | 25 (Tc) | 25 (Tc) | 25 (Tc) | 35 (Tc) | 6.5 (Ta), 31 (Tc) | 7.5 (Ta), 43 (Tc) | 40 (Tc) | 40 (Tc) | 35 (Tc) |
| Rds On @ 10V (mOhm) | 29 | 35 | 38 | 35 | 26 | 24 | 24 | 28 | 25 | 25 |
| Vgs(th) @ 250µA (V) | 4 | 2.5 | 4 | 4.5 | 4.4 | 2.7 | 4 | 4 | 2.5 | 4 |
| Qg @ 10V (nC) | 49 | 52 | 55 | 14 | 47 | 25 | 34 | 46 | 70 | 31 |
| Ciss (pF) | 1760 | 1710 | 1550 | 920 | 2000 | 1190 | 2200 | 2445 | 3380 | 2070 |
| Package | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 |
| Operating Temp (°C) | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 |
| Product Status | Obsolete | Active | Active | Active | Active | Active | Active | Active | Active | Active |
Engineering Selection Recommendations
Primary Substitutes (Closest Electrical Match):
STD25NF10LT4 and STD25NF10T4 (STMicroelectronics) are the most direct substitutes. Both devices maintain the TO-252-3 package, support 100V Vdss, and deliver 25A continuous drain current at case temperature. The STD25NF10LT4 features lower gate threshold voltage (2.5V) and lower on-resistance (35 mOhm), providing improved switching characteristics. Both parts are RoHS3 compliant and carry active product status with extensive inventory availability.
Secondary Substitutes (Higher Current Capability):
SUD35N10-26P-GE3 (Vishay Siliconix) and AOD2910 (Alpha & Omega Semiconductor) provide 35A and 31A continuous drain current respectively, with on-resistance values of 26 mOhm and 24 mOhm. These parts offer superior thermal performance and are suitable for applications requiring higher current margins. Both maintain 100V Vdss rating and TO-252-3 package compatibility. SUD35N10-26P-GE3 is RoHS3 compliant with active status.
High-Current Alternatives:
AOD464 (Alpha & Omega Semiconductor) and SQD40N10-25_GE3 (Vishay Siliconix) deliver 40A continuous drain current with 105V and 100V Vdss ratings respectively. These parts are suitable for applications requiring maximum thermal headroom and current handling. Both maintain TO-252-3 package compatibility and active product status. AOD464 is RoHS3 compliant.
Compliance Considerations:
All recommended substitute parts are RoHS3 compliant and carry REACH Unaffected status, matching the environmental compliance profile of the original FDD3580. All parts operate across the full -55°C to 175°C temperature range. Moisture sensitivity level is MSL 1 (Unlimited) for all substitutes, ensuring compatibility with standard PCB assembly processes.
Frequently Asked Questions (FAQ)
Q: Can I use a 100V-rated MOSFET as a direct replacement for the 80V FDD3580?
A: Yes. A 100V Vdss rating provides voltage margin above the original 80V specification while maintaining full functional compatibility. The higher voltage rating does not degrade circuit performance in 80V applications.
Q: What is the significance of the on-resistance (Rds On) value when selecting a substitute?
A: On-resistance directly affects power dissipation and heat generation. The FDD3580 specifies 29 mOhm at 7.7A and 10V gate drive. Substitute parts with Rds On values between 24–38 mOhm maintain comparable thermal performance. Lower values reduce power loss; higher values increase heat generation but remain acceptable within the specified operating range.
Q: Are all substitute parts available in the same TO-252-3 package?
A: Yes. All recommended substitute parts use the TO-252-3 (DPAK) surface mount package, ensuring mechanical and thermal compatibility with existing PCB layouts without requiring board redesign.
Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?
A: Ta represents continuous drain current at 25°C ambient temperature without active cooling. Tc represents continuous drain current at 25°C case temperature with proper thermal management. Tc ratings are typically higher and reflect the device's capability when mounted on a PCB with adequate copper area for heat dissipation.
Q: Why do some substitute parts have lower gate threshold voltage (Vgs(th)) values?
A: Gate threshold voltage determines the minimum gate-source voltage required to turn the device on. Lower Vgs(th) values (2.5V vs. 4V) allow operation with lower gate drive voltages, reducing power consumption in gate driver circuits. Both values are compatible with standard PWM controllers operating at 5V or 10V logic levels.
Q: Is the STD25NF10LT4 preferred over the STD25NF10T4?
A: The STD25NF10LT4 offers lower gate threshold voltage (2.5V vs. 4V) and identical on-resistance (35 mOhm), providing improved switching efficiency. Both parts are functionally equivalent for the FDD3580 application. Selection depends on specific gate drive circuit requirements and available inventory.
Q: Can I use AOD464 or SQD40N10-25_GE3 in place of the FDD3580?
A: Yes. Both parts provide 40A continuous drain current with 100V or 105V Vdss ratings, delivering superior thermal performance and current handling capability. These parts are suitable for applications requiring maximum design margin. The higher current rating does not create compatibility issues in circuits designed for 7.7A operation.
Q: What is the impact of higher input capacitance (Ciss) on circuit performance?
A: Input capacitance affects gate charge requirements and switching speed. The FDD3580 specifies 1760 pF at 40V. Substitute parts range from 920 pF to 3380 pF. Higher capacitance requires more gate charge (Qg) to switch the device, potentially increasing switching losses in high-frequency applications. Lower capacitance reduces gate drive power requirements.
Q: Are all substitute parts RoHS3 compliant?
A: All recommended substitute parts carry RoHS3 compliance certification, matching the environmental compliance requirements of modern manufacturing standards. Verify specific part revision codes with the manufacturer if compliance documentation is required for regulated applications.
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