FDD2572 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDD2572 is an N-Channel 150V MOSFET manufactured by onsemi in the PowerTrench® series. This device is rated for 4A continuous drain current at 25°C ambient temperature and 29A at case temperature, with a maximum power dissipation of 135W. The FDD2572 is housed in a Surface Mount TO-252AA package and maintains Active product status.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or specific application parameters. Substitute devices must maintain compatibility across critical electrical specifications including drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance within the same or compatible package footprint.

Substiute Parts

FDD2572
onsemiIn Stock: 15445FDD2572 Datasheet
FDD2572
Current Part
AOD2544
Alpha & Omega Semiconductor Inc.In Stock: 1459AOD2544 Datasheet
AOD2544
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PJD30N15_L2_00001
Panjit International Inc.In Stock: 4045PJD30N15_L2_00001 Datasheet
PJD30N15_L2_00001
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PMT280ENEAX
Nexperia USA Inc.In Stock: 2298PMT280ENEAX Datasheet
PMT280ENEAX
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SQD25N15-52_GE3
Vishay SiliconixIn Stock: 22828SQD25N15-52_GE3 Datasheet
SQD25N15-52_GE3
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Key Parameters

Parameter FDD2572 Specification
Drain-Source Voltage (Vdss) 150 V
Continuous Drain Current @ 25°C (Ta) 4A
Continuous Drain Current @ Case (Tc) 29A
On-Resistance (Rds On) Max @ 9A, 10V 54 mOhm
Gate Threshold Voltage (Vgs(th)) Max @ 250µA 4V
Power Dissipation Max (Tc) 135W
Operating Temperature Range -55°C to 175°C
Package Type TO-252AA (DPAK)
Technology N-Channel MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the FDD2572 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute devices must maintain a Drain-Source Voltage (Vdss) rating of 150V or greater to ensure safe operation within the same circuit topology.

Current Capability: Substitute devices must support continuous drain current ratings at case temperature (Tc) of 29A or greater to maintain thermal performance equivalence. Devices with lower Tc ratings may require thermal management reassessment.

On-Resistance Characteristics: On-resistance (Rds On) at 10V gate drive must not exceed 54 mOhm at the specified test current to ensure comparable power dissipation and thermal behavior.

Package Compatibility: Substitute devices must utilize TO-252AA or equivalent TO-252 DPAK footprints to maintain mechanical and thermal interface compatibility with existing PCB designs.

Temperature Range: Operating temperature range must encompass the full -55°C to 175°C specification or demonstrate compatibility within the application's actual operating window.

Regulatory Compliance: All substitute devices must maintain ROHS3 compliance and equivalent regulatory status (REACH Unaffected, EAR99 classification).

Parameter Comparison

Parameter FDD2572 (onsemi) SQD25N15-52_GE3 (Vishay) AOD2544 (Alpha & Omega) PJD30N15_L2_00001 (Panjit) PMT280ENEAX (Nexperia)
Manufacturer onsemi Vishay Siliconix Alpha & Omega Semiconductor Inc. Panjit International Inc. Nexperia USA Inc.
Drain-Source Voltage (Vdss) 150V 150V 150V 150V 100V
Continuous Drain Current @ Tc 29A 25A 23A 25A Not specified for Tc
Continuous Drain Current @ Ta 4A Not specified 6.5A 3.5A 1.5A
On-Resistance (Rds On) Max @ 10V 54 mOhm @ 9A 52 mOhm @ 15A 54 mOhm @ 5A 65 mOhm @ 5A 385 mOhm @ 1.5A
Gate Threshold Voltage (Vgs(th)) Max 4V @ 250µA 4V @ 250µA 2.7V @ 250µA 4V @ 250µA 2.7V @ 250µA
Power Dissipation Max (Tc) 135W 107W 75W 102W 770mW
Operating Temperature Range -55°C to 175°C -55°C to 175°C -55°C to 175°C -55°C to 150°C -55°C to 150°C
Package Type TO-252AA TO-252AA TO-252 (DPAK) TO-252 (DPAK) SOT-223
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active Active Active

Engineering Selection Recommendations

Primary Substitutes (Full Compatibility):

The SQD25N15-52_GE3 (Vishay Siliconix TrenchFET®) and AOD2544 (Alpha & Omega AlphaMOS) are the preferred substitute options. Both devices maintain 150V Vdss rating, support 23A to 25A continuous drain current at case temperature, and are housed in compatible TO-252 DPAK packages. Both devices carry ROHS3 compliance and maintain the full -55°C to 175°C operating temperature range. The SQD25N15-52_GE3 includes AEC-Q101 automotive qualification, while the AOD2544 provides equivalent electrical performance with lower gate charge (20 nC versus 34 nC).

Secondary Substitute (Reduced Thermal Performance):

The PJD30N15_L2_00001 (Panjit International) maintains 150V Vdss and 25A Tc current rating but exhibits higher on-resistance (65 mOhm) and reduced maximum operating temperature (150°C versus 175°C). This device is suitable for applications where the upper temperature limit of 150°C is acceptable and thermal dissipation requirements are within the 102W maximum power rating.

Not Recommended:

The PMT280ENEAX (Nexperia) operates at 100V Vdss, which is insufficient for 150V circuit applications. Additionally, the 1.5A continuous drain current and 385 mOhm on-resistance are incompatible with the FDD2572 performance envelope. This device is suitable only for independent low-voltage, low-current applications and does not constitute a valid substitute.

Frequently Asked Questions (FAQ)

Q: Can the PMT280ENEAX be used as a substitute for the FDD2572?

A: No. The PMT280ENEAX operates at 100V maximum drain-source voltage, which is below the 150V requirement of the FDD2572. Using this device in a 150V circuit would result in device failure. Additionally, the 1.5A continuous current rating and 385 mOhm on-resistance are incompatible with the FDD2572 specifications.

Q: What is the difference between the SQD25N15-52_GE3 and AOD2544 substitutes?

A: Both devices maintain 150V Vdss and support 23A to 25A continuous drain current at case temperature. The SQD25N15-52_GE3 includes AEC-Q101 automotive qualification and carries a 51 nC gate charge specification. The AOD2544 features lower gate charge (20 nC) and a lower gate threshold voltage (2.7V versus 4V), which may reduce gate drive requirements in certain applications. Both are electrically compatible with the FDD2572.

Q: Is the PJD30N15_L2_00001 suitable for high-temperature applications?

A: The PJD30N15_L2_00001 operates to a maximum junction temperature of 150°C, compared to the FDD2572 specification of 175°C. Applications requiring operation above 150°C must use the FDD2572, SQD25N15-52_GE3, or AOD2544. For applications with maximum operating temperatures at or below 150°C, the PJD30N15_L2_00001 is acceptable.

Q: Are all substitute parts available in the same package footprint?

A: The SQD25N15-52_GE3 and AOD2544 are available in TO-252AA and TO-252 DPAK packages respectively, which are mechanically and thermally compatible with the FDD2572 TO-252AA footprint. The PJD30N15_L2_00001 is also available in TO-252 DPAK. The PMT280ENEAX uses a different SOT-223 package and is not footprint-compatible.

Q: What is the significance of the on-resistance (Rds On) specification in substitute selection?

A: On-resistance directly determines power dissipation and thermal performance. The FDD2572 specifies 54 mOhm maximum on-resistance. The SQD25N15-52_GE3 (52 mOhm) and AOD2544 (54 mOhm) maintain equivalent or superior on-resistance performance. The PJD30N15_L2_00001 (65 mOhm) exhibits higher on-resistance, resulting in increased power dissipation and thermal load. Applications with tight thermal budgets should prioritize devices with on-resistance equal to or lower than 54 mOhm.

Q: Do all substitute parts meet RoHS3 compliance requirements?

A: Yes. All listed substitute parts (SQD25N15-52_GE3, AOD2544, PJD30N15_L2_00001, and PMT280ENEAX) are ROHS3 compliant and carry REACH Unaffected status with EAR99 classification, matching the regulatory compliance profile of the FDD2572.

Q: What is the impact of gate charge (Qg) differences between substitutes?

A: Gate charge affects gate drive circuit design and switching speed. The FDD2572 specifies 34 nC gate charge at 10V. The SQD25N15-52_GE3 (51 nC) requires higher gate drive energy, while the AOD2544 (20 nC) requires less. Applications with fixed gate drive circuits must verify that the selected substitute's gate charge specification is compatible with the existing driver circuit to ensure proper switching performance.

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