FDC8884 Equivalent & Substitute Parts

Part Overview

The FDC8884 is an N-Channel 30V MOSFET manufactured by onsemi, rated for 6.5A continuous drain current (Ta) and 8A (Tc) in a SuperSOT™-6 surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. The FDC8884 operates across a temperature range of -55°C to 150°C and delivers 1.6W maximum power dissipation at Ta conditions.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	6.5A (Ta), 8A (Tc)	A
On-Resistance (Rds On Max) @ Id, Vgs	23 mOhm @ 6.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	3V @ 250µA	V
Gate Charge (Qg Max) @ Vgs	7.4 nC @ 10V	nC
Input Capacitance (Ciss Max) @ Vds	465 pF @ 15V	pF
Power Dissipation (Max)	1.6	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SuperSOT™-6 / SOT-23-6 Thin	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the FDC8884 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 6.5A (Ta) or 8A (Tc) minimum
On-Resistance (Rds On): 23 mOhm or lower at rated conditions
Gate Threshold Voltage (Vgs(th)): 3V or lower
Package Type: SOT-23-6 Thin or TSOT-23-6 compatible footprint
FET Type: N-Channel MOSFET
Operating Temperature: -55°C to 150°C minimum

Substitute Classification:

Parametric Equivalent: FDC8886 matches all electrical specifications and package requirements identically to the FDC8884, with the distinction of active product status and different packaging format (Bulk vs. Cut Tape).

Similar Substitutes: DMN3026LVT-7, SI3424CDV-T1-GE3, SQ3410EV-T1_GE3, and STT6N3LLH6 satisfy the core electrical parameters (Vdss, Id, Rds On, Vgs(th)) and package compatibility but exhibit variations in secondary parameters such as gate charge, input capacitance, and power dissipation ratings.

Parameter Comparison

Parameter	FDC8884 (Main)	FDC8886	DMN3026LVT-7	SI3424CDV-T1-GE3	SQ3410EV-T1_GE3	STT6N3LLH6
Manufacturer	onsemi	Fairchild Semiconductor	Diodes Incorporated	Vishay Siliconix	Vishay Siliconix	STMicroelectronics
Product Status	Obsolete	Active	Active	Active	Active	Active
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	6.5 (Ta), 8 (Tc)	6.5 (Ta), 8 (Tc)	6.6 (Ta)	8 (Tc)	8 (Tc)	6 (Tc)
Rds On Max (mOhm)	23 @ 6.5A, 10V	23 @ 6.5A, 10V	23 @ 6.5A, 10V	26 @ 7.2A, 10V	17.5 @ 5A, 10V	25 @ 3A, 10V
Vgs(th) Max (V)	3 @ 250µA	3 @ 250µA	2 @ 250µA	2.5 @ 250µA	2.5 @ 250µA	1 @ 250µA
Qg Max (nC)	7.4 @ 10V	7.4 @ 10V	12.5 @ 10V	12.5 @ 10V	21 @ 10V	3.6 @ 4.5V
Ciss Max (pF)	465 @ 15V	465 @ 15V	643 @ 15V	405 @ 15V	1005 @ 15V	283 @ 24V
Power Dissipation Max (W)	1.6 (Ta)	1.6 (Ta)	1.2 (Ta)	3.6 (Tc)	5 (Tc)	1.6 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 150
Package	SuperSOT™-6 / SOT-23-6 Thin	SuperSOT™-6 / SOT-23-6 Thin	TSOT-23-6	6-TSOP	6-TSOP	SOT-23-6
RoHS Status	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	Not specified	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	Not specified	REACH Unaffected	REACH Unaffected	Vendor Undefined	REACH Unaffected

Engineering Selection Recommendations

FDC8886 (Parametric Equivalent)

The FDC8886 manufactured by Fairchild Semiconductor is the direct parametric equivalent to the FDC8884. All electrical specifications, including Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance, are identical. The FDC8886 maintains active product status, ensuring long-term availability and supply chain continuity. Both devices are ROHS3 compliant and carry MSL 1 ratings. The primary distinction is packaging format: FDC8886 is supplied in Bulk packaging, whereas FDC8884 was supplied in Cut Tape format. This substitute is suitable for direct replacement in all applications where the FDC8884 was originally specified.

DMN3026LVT-7 (Similar Substitute)

The DMN3026LVT-7 from Diodes Incorporated satisfies core electrical requirements with matching Vdss (30V), comparable Id (6.6A Ta), and identical Rds On (23 mOhm @ 6.5A, 10V). This device exhibits lower gate threshold voltage (2V vs. 3V) and higher gate charge (12.5 nC vs. 7.4 nC). The DMN3026LVT-7 is active, ROHS3 compliant, and supplied in Tape & Reel format. Power dissipation is rated at 1.2W (Ta), which is lower than the FDC8884's 1.6W. This substitute is applicable in applications where gate charge variation and reduced power dissipation are acceptable.

SI3424CDV-T1-GE3 (Similar Substitute)

The SI3424CDV-T1-GE3 from Vishay Siliconix (TrenchFET® series) provides Vdss of 30V and Id of 8A (Tc). On-resistance is 26 mOhm @ 7.2A, 10V, representing a slight increase from the FDC8884's 23 mOhm specification. Gate threshold voltage is 2.5V, and gate charge is 12.5 nC. Input capacitance is lower at 405 pF. Power dissipation is rated at 3.6W (Tc), exceeding the FDC8884's 1.6W. This device is active, ROHS3 compliant, and supplied in Tape & Reel format. The SI3424CDV-T1-GE3 is suitable for applications requiring higher power handling capability.

SQ3410EV-T1_GE3 (Similar Substitute)

The SQ3410EV-T1_GE3 from Vishay Siliconix (TrenchFET® series) offers Vdss of 30V and Id of 8A (Tc) with superior on-resistance of 17.5 mOhm @ 5A, 10V. Gate threshold voltage is 2.5V. Gate charge is elevated at 21 nC, and input capacitance is significantly higher at 1005 pF. Power dissipation is rated at 5W (Tc). Operating temperature extends to 175°C, providing enhanced thermal margin. This device is active and ROHS3 compliant. REACH status is vendor undefined. The SQ3410EV-T1_GE3 is applicable in high-power applications where superior on-resistance and extended temperature operation are required.

STT6N3LLH6 (Similar Substitute)

The STT6N3LLH6 from STMicroelectronics (DeepGATE™ and STripFET™ VI series) provides Vdss of 30V and Id of 6A (Tc). On-resistance is 25 mOhm @ 3A, 10V. Gate threshold voltage is significantly lower at 1V, and gate charge is minimal at 3.6 nC @ 4.5V. Input capacitance is reduced to 283 pF. Power dissipation is 1.6W (Tc), matching the FDC8884. This device is active, ROHS3 compliant, and supplied in Cut Tape format. The STT6N3LLH6 is suitable for applications prioritizing low gate charge and minimal input capacitance.

Frequently Asked Questions (FAQ)

Q: Can the FDC8886 be used as a direct replacement for the FDC8884?

A: Yes. The FDC8886 is a parametric equivalent with identical electrical specifications across all critical parameters: Vdss (30V), Id (6.5A Ta / 8A Tc), Rds On (23 mOhm @ 6.5A, 10V), Vgs(th) (3V @ 250µA), gate charge (7.4 nC @ 10V), and input capacitance (465 pF @ 15V). The only difference is packaging format (Bulk vs. Cut Tape). Direct substitution is valid for all applications.

Q: What are the key differences between the FDC8884 and the DMN3026LVT-7?

A: The DMN3026LVT-7 maintains matching Vdss, Id, and Rds On specifications. However, it exhibits lower gate threshold voltage (2V vs. 3V), higher gate charge (12.5 nC vs. 7.4 nC), higher input capacitance (643 pF vs. 465 pF), and lower power dissipation (1.2W vs. 1.6W). These differences may affect switching speed and thermal performance in specific circuit topologies.

Q: Are all substitute parts compatible with the same PCB footprint as the FDC8884?

A: The FDC8884, FDC8886, DMN3026LVT-7, and STT6N3LLH6 use SOT-23-6 or TSOT-23-6 packages with compatible footprints. The SI3424CDV-T1-GE3 and SQ3410EV-T1_GE3 use 6-TSOP packages, which have different pin configurations and PCB footprints. Physical layout verification is required before substituting these devices.

Q: Which substitute offers the lowest on-resistance?

A: The SQ3410EV-T1_GE3 provides the lowest on-resistance at 17.5 mOhm @ 5A, 10V, compared to the FDC8884's 23 mOhm. This lower on-resistance reduces conduction losses and heat generation in high-current applications.

Q: What is the significance of gate charge differences among these devices?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The FDC8884 and FDC8886 have the lowest gate charge at 7.4 nC, enabling faster switching. The STT6N3LLH6 has minimal gate charge at 3.6 nC, suitable for high-frequency switching applications. Higher gate charge values (12.5 nC to 21 nC) in other substitutes may increase switching losses and reduce maximum operating frequency.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are ROHS3 compliant except FDC8886, for which RoHS status is not specified in the provided data. DMN3026LVT-7, SI3424CDV-T1-GE3, SQ3410EV-T1_GE3, and STT6N3LLH6 are confirmed ROHS3 compliant.

Q: What is the operating temperature range for each substitute?

A: FDC8884, FDC8886, DMN3026LVT-7, SI3424CDV-T1-GE3, and STT6N3LLH6 operate from -55°C to 150°C. The SQ3410EV-T1_GE3 extends the upper limit to 175°C, providing additional thermal margin for high-temperature applications.

Q: Which substitute has the lowest input capacitance?

A: The STT6N3LLH6 has the lowest input capacitance at 283 pF @ 24V, compared to the FDC8884's 465 pF @ 15V. Lower input capacitance reduces gate drive requirements and improves switching performance in capacitive load applications.

Q: Can the SQ3410EV-T1_GE3 be used in place of the FDC8884 despite higher gate charge?

A: The SQ3410EV-T1_GE3 meets the core electrical requirements (Vdss, Id, Rds On) but exhibits significantly higher gate charge (21 nC vs. 7.4 nC) and input capacitance (1005 pF vs. 465 pF). Substitution is valid only if the gate driver circuit can supply the additional charge and the application tolerates increased switching losses. Circuit simulation or testing is necessary to confirm compatibility.

Q: What is the REACH compliance status of all substitutes?

A: FDC8884, FDC8886, DMN3026LVT-7, SI3424CDV-T1-GE3, and STT6N3LLH6 are REACH Unaffected. The SQ3410EV-T1_GE3 has vendor-undefined REACH status. Verification with the manufacturer is recommended for applications requiring confirmed REACH compliance.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message