FDC658P Equivalent & Substitute Parts

Part Overview

The FDC658P is a P-Channel 30 V, 4A continuous drain current MOSFET manufactured by onsemi in the PowerTrench® series. This device is housed in a SuperSOT™-6 package and is designed for surface mount applications requiring moderate power dissipation up to 1.6W. The part is currently Active in product status with 17,300 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges for drain-source voltage, continuous drain current, on-resistance, and thermal characteristics. Alternative devices may be selected based on availability, packaging preferences, or specific application requirements while maintaining functional compatibility.

Key Parameters

Parameter	FDC658P Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	4	A
Rds On (Max) @ 4A, 10V	50	mOhm
Vgs(th) (Max) @ 250µA	3	V
Gate Charge (Qg) @ 5V	12	nC
Power Dissipation (Max)	1.6	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-6 Thin (SuperSOT™-6)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FDC658P is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 30V
Continuous Drain Current (Id) must equal or exceed 4A at 25°C
On-Resistance (Rds On) must not significantly exceed 50mOhm at rated current and 10V gate drive
Gate Threshold Voltage (Vgs(th)) must be compatible with 3V maximum specification
Power Dissipation capability must support 1.6W or greater

Mechanical Compatibility Criteria:

Surface Mount technology required
Package must be compatible with SOT-23-6 footprint or equivalent 6-pin surface mount packages
Moisture Sensitivity Level (MSL) of 1 (Unlimited) required

Compliance Requirements:

ROHS3 Compliant status required
Operating temperature range must encompass -55°C to 150°C

Substitute parts are grouped into two categories: direct equivalents with identical or superior electrical specifications and alternative packages, and functional substitutes with comparable performance within acceptable parameter tolerances.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 5-10V (nC)	Power Diss. (W)	Package	Product Status
FDC658P	onsemi	30	4	50	3	12	1.6	SOT-23-6	Active
FDC658AP	onsemi	30	4	50	3	8.1	1.6	SOT-23-6	Active
NTGS4111PT1G	onsemi	30	2.6	60	3	32	0.63	SOT-23-6	Active
BSL307SPH6327XTSA1	Infineon Technologies	30	5.5	43	2	29	2	SC-74	Active
DMP3050LVT-7	Diodes Incorporated	30	4.5	50	2	10.5	1.8	SOT-23-6	Active
DMP3098LDM-7	Diodes Incorporated	30	4	65	2.1	7.8	1.25	SOT-23-6	Active
PMN50EPEX	Nexperia USA Inc.	30	4.6	45	3	20	0.56	SC-74	Active
RRQ030P03TR	Rohm Semiconductor	30	3	75	2.5	12	0.6	SOT-23-6	Active
RRQ045P03TR	Rohm Semiconductor	30	4.5	35	2.5	14	0.6	SOT-23-6	Not For New Designs
STT4P3LLH6	STMicroelectronics	30	4	56	2.5	6	1.6	SOT-23-6	Active
ZXMP3A16N8TA	Diodes Incorporated	30	5.6	40	1	29.6	1.9	8-SOIC	Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for New Designs):

FDC658AP is the primary equivalent, manufactured by onsemi in the same PowerTrench® series. This part maintains identical electrical specifications to the FDC658P with improved gate charge characteristics (8.1 nC versus 12 nC) and higher maximum gate voltage rating (±25V versus ±20V). Both parts are Active in product status with ROHS3 compliance and unlimited moisture sensitivity rating. FDC658AP offers superior availability with 41,280 units in stock.

STT4P3LLH6 from STMicroelectronics provides equivalent performance in the SOT-23-6 package with identical 4A drain current and 1.6W power dissipation. This device features lower gate charge (6 nC) and is Active in product status with full ROHS3 compliance.

DMP3050LVT-7 from Diodes Incorporated offers 4.5A continuous drain current with 50mOhm on-resistance, exceeding the FDC658P specification. This part is housed in SOT-23-6 package and is Active with ROHS3 compliance.

Alternative Selections (Functional Substitutes):

BSL307SPH6327XTSA1 from Infineon Technologies provides superior current handling at 5.5A with lower on-resistance (43mOhm) and higher power dissipation capability (2W). This part uses the SC-74 package and is Active with ROHS3 compliance. Package footprint differs from SOT-23-6.

RRQ045P03TR from Rohm Semiconductor delivers 4.5A continuous current with excellent on-resistance of 35mOhm. However, this part is designated "Not For New Designs" and should be used only for legacy system maintenance or replacement applications.

ZXMP3A16N8TA from Diodes Incorporated provides 5.6A current capability with 40mOhm on-resistance in an 8-SOIC package. This part is Active with ROHS3 compliance but requires different PCB footprint accommodation.

Parts Not Recommended for Direct Substitution:

NTGS4111PT1G has reduced continuous drain current (2.6A) and lower power dissipation (630mW), making it unsuitable for applications requiring full 4A performance.

RRQ030P03TR has reduced continuous drain current (3A) and higher on-resistance (75mOhm), limiting its use to lower-current applications.

Frequently Asked Questions (FAQ)

Q: Can FDC658AP be used as a direct replacement for FDC658P?

A: Yes. FDC658AP is manufactured by onsemi in the same PowerTrench® series with identical drain-source voltage (30V), continuous drain current (4A), and on-resistance (50mOhm at 10V). Both parts use the SOT-23-6 package, have identical operating temperature range (-55°C to 150°C), and are ROHS3 compliant. FDC658AP offers improved gate charge performance and higher gate voltage rating.

Q: What is the minimum continuous drain current required for a substitute part?

A: The FDC658P is rated for 4A continuous drain current at 25°C. Substitute parts must equal or exceed this specification to ensure adequate current handling capability. Parts with lower ratings (such as NTGS4111PT1G at 2.6A) are not suitable for direct replacement.

Q: Are package differences between SOT-23-6 and SC-74 significant?

A: Yes. SOT-23-6 and SC-74 packages have different physical footprints and pin configurations. While both are 6-pin surface mount packages, PCB layout modifications are required when switching between these packages. Parts such as BSL307SPH6327XTSA1 (SC-74) and PMN50EPEX (SC-74) require new PCB design accommodation.

Q: What on-resistance tolerance is acceptable for substitution?

A: The FDC658P specifies 50mOhm maximum on-resistance at 4A and 10V gate drive. Substitute parts with on-resistance at or below this value are directly compatible. Parts with higher on-resistance (such as DMP3098LDM-7 at 65mOhm or RRQ030P03TR at 75mOhm) may be used in applications with lower current density requirements but will generate increased heat dissipation.

Q: Why is RRQ045P03TR marked "Not For New Designs"?

A: RRQ045P03TR carries a "Not For New Designs" product status designation from Rohm Semiconductor. This indicates the manufacturer is transitioning away from this part number. While the device remains functionally equivalent with 4.5A current and 35mOhm on-resistance, it should be used only for legacy system maintenance or replacement applications. New designs should select from Active status alternatives.

Q: Can ZXMP3A16N8TA replace FDC658P in existing PCB layouts?

A: No. ZXMP3A16N8TA uses an 8-SOIC package, which has a different footprint than the SOT-23-6 package of FDC658P. While the electrical specifications are superior (5.6A current, 40mOhm on-resistance), PCB redesign is required for physical accommodation. This part is suitable only for new designs where the 8-SOIC footprint can be incorporated.

Q: What compliance certifications are required for substitute parts?

A: All substitute parts listed are ROHS3 compliant and have Moisture Sensitivity Level (MSL) of 1 (Unlimited). These certifications match the FDC658P requirements. All parts are designated as REACH Unaffected and carry EAR99 ECCN classification, consistent with the original part.

Q: How does gate charge affect substitution suitability?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The FDC658P specifies 12 nC at 5V. Substitute parts with lower gate charge (such as STT4P3LLH6 at 6 nC or FDC658AP at 8.1 nC) require less driver current and enable faster switching. Parts with higher gate charge (such as NTGS4111PT1G at 32 nC) may require driver circuit modifications but are not incompatible if adequate driver capability exists.

Q: Is thermal performance a critical substitution parameter?

A: Yes. The FDC658P is rated for 1.6W power dissipation at ambient temperature. Substitute parts with equal or higher power dissipation ratings (such as BSL307SPH6327XTSA1 at 2W or DMP3050LVT-7 at 1.8W) are thermally compatible. Parts with lower ratings (such as NTGS4111PT1G at 630mW) may require thermal management review in high-power applications.

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