FDC653N N-Channel 30V 5A MOSFET Equivalent & Substitute Parts

Part Overview

The FDC653N is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 5A continuous drain current at 25°C. The device is housed in a SuperSOT™-6 package (SOT-23-6 Thin, TSOT-23-6) and is designed for surface mount applications. The FDC653N maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and compatible surface mount packaging. Substitutes are selected from active or recently active product lines with verified electrical compatibility.

Key Parameters

Parameter	FDC653N Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	5	A
Rds On (Max) @ Id, Vgs	35 mOhm @ 5A, 10V	—
Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	350	pF @ 15V
Power Dissipation (Max)	1.6	W (Ta)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	SOT-23-6 Thin, TSOT-23-6	—
RoHS Status	ROHS3 Compliant	—
Product Status	Active	—

Substitute Part Grouping Explanation

Substitute parts for the FDC653N are grouped based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (required)
Drain to Source Voltage (Vdss): 30V minimum (FDC653N rated at 30V; substitutes rated at 30V or higher are acceptable)
Continuous Drain Current (Id): 5A or greater at 25°C (FDC653N rated at 5A; higher current ratings provide design margin)
On-Resistance (Rds On): Lower or equivalent values at specified gate voltage and current
Gate Voltage (Vgs): ±20V or greater maximum rating (FDC653N rated at ±20V)
Package Compatibility: SOT-23-6 Thin or TSOT-23-6 surface mount packages

Substitution Logic: Parts meeting or exceeding all primary criteria are classified as direct substitutes. Parts with higher voltage ratings, higher current ratings, or lower on-resistance values provide enhanced performance margins. Parts with lower current ratings or higher on-resistance values are not suitable substitutes. Package form factor must remain compatible with surface mount assembly processes.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Vgs Max (V)	Ciss (pF)	Package	Status
FDC653N	onsemi	30	5	35 @ 5A, 10V	2 @ 250µA	17 @ 10V	±20	350 @ 15V	SOT-23-6 Thin	Active
NTGS4141NT1G	onsemi	30	3.5	25 @ 7A, 10V	3 @ 250µA	12 @ 10V	±20	560 @ 24V	SOT-23-6 Thin	Active
SI3456DDV-T1-GE3	Vishay Siliconix	30	6.3	40 @ 5A, 10V	3 @ 250µA	9 @ 10V	±20	325 @ 15V	SOT-23-6 Thin	Active
SQ3456BEV-T1_GE3	Vishay Siliconix	30	7.8	35 @ 6A, 10V	2.5 @ 250µA	10 @ 10V	±20	370 @ 15V	SOT-23-6 Thin	Obsolete
RTQ045N03TR	Rohm Semiconductor	30	4.5	43 @ 4.5A, 4.5V	1.5 @ 1mA	10.7 @ 4.5V	±12	540 @ 10V	SOT-23-6 Thin	Not For New Designs
RTQ035N03TR	Rohm Semiconductor	30	3.5	54 @ 3.5A, 4.5V	1.5 @ 1mA	6.4 @ 4.5V	±12	285 @ 10V	SOT-23-6 Thin	Not For New Designs
RTQ020N03TR	Rohm Semiconductor	30	2	125 @ 2A, 4.5V	1.5 @ 1mA	3.3 @ 4.5V	±12	135 @ 10V	SOT-23-6 Thin	Active
RSQ020N03TR	Rohm Semiconductor	30	2	134 @ 2A, 10V	2.5 @ 1mA	3.1 @ 5V	±20	110 @ 10V	SOT-23-6 Thin	Active
FDS4480	onsemi	40	10.8	12 @ 10.8A, 10V	5 @ 250µA	41 @ 10V	+30, -20	1686 @ 20V	8-SOIC	Active

Engineering Selection Recommendations

Direct Substitutes (Active Status, Recommended for New Designs):

The SI3456DDV-T1-GE3 (Vishay Siliconix) is the primary recommended substitute. It maintains 30V Vdss rating, exceeds the 5A continuous drain current requirement with 6.3A capability, and provides equivalent on-resistance performance. The device is housed in the same SOT-23-6 Thin package and carries Active product status with full RoHS3 compliance.

The NTGS4141NT1G (onsemi) is an alternative substitute with 30V Vdss and 3.5A continuous drain current. While the current rating is below the FDC653N specification, the lower on-resistance (25 mOhm @ 7A, 10V) and reduced gate charge (12 nC) provide improved switching characteristics for applications where current margin is not critical.

Conditional Substitutes (Not For New Designs Status):

The RTQ045N03TR (Rohm Semiconductor) provides 4.5A continuous drain current at 30V Vdss with 43 mOhm on-resistance. This part is marked "Not For New Designs" and should only be used in legacy system maintenance or where existing inventory constraints apply. The device maintains SOT-23-6 Thin package compatibility and RoHS3 compliance.

The RTQ035N03TR (Rohm Semiconductor) is similarly marked "Not For New Designs" with 3.5A continuous drain current and 54 mOhm on-resistance at 30V Vdss. This part is suitable only for replacement applications in existing systems.

Obsolete Status (Not Recommended):

The SQ3456BEV-T1_GE3 (Vishay Siliconix) is marked Obsolete and carries only 6400 pieces in inventory. Although electrical parameters exceed FDC653N specifications (7.8A continuous drain current, 35 mOhm on-resistance), the obsolete status and limited availability make this part unsuitable for new designs or long-term production commitments.

Non-Compatible Substitute:

The FDS4480 (onsemi) is rated for 40V Vdss and 10.8A continuous drain current, exceeding FDC653N specifications. However, the device is packaged in 8-SOIC format rather than SOT-23-6 Thin, making it mechanically incompatible with existing PCB layouts designed for the FDC653N. This part is suitable only for designs where package footprint can be modified.

Lower Current Alternatives:

The RTQ020N03TR and RSQ020N03TR (both Rohm Semiconductor) are rated for only 2A continuous drain current at 30V Vdss. These parts are not suitable substitutes for the FDC653N in applications requiring 5A current capability. These devices are appropriate only for lower-current applications where the FDC653N is over-specified.

Frequently Asked Questions (FAQ)

Q: Can the NTGS4141NT1G replace the FDC653N in all applications?

A: The NTGS4141NT1G is electrically compatible with the FDC653N for applications where continuous drain current does not exceed 3.5A. The FDC653N is rated for 5A continuous drain current, while the NTGS4141NT1G is rated for 3.5A. If your application requires the full 5A capability, the NTGS4141NT1G is not suitable. For applications operating below 3.5A, the NTGS4141NT1G provides equivalent or superior performance due to lower on-resistance and reduced gate charge.

Q: Why is the FDS4480 listed as a substitute if it has a different package?

A: The FDS4480 is listed in the provided substitute data but is not recommended as a direct replacement due to package incompatibility. The FDS4480 uses an 8-SOIC package while the FDC653N uses SOT-23-6 Thin. Package footprints are not interchangeable on existing PCBs. The FDS4480 is suitable only for new designs where the PCB layout can accommodate the larger 8-SOIC package.

Q: What is the difference between the RTQ045N03TR and the FDC653N?

A: Both devices are rated for 30V Vdss and operate within the same temperature range (-55°C to 150°C). The RTQ045N03TR is rated for 4.5A continuous drain current compared to the FDC653N's 5A rating. The RTQ045N03TR has higher on-resistance (43 mOhm @ 4.5A, 4.5V) compared to the FDC653N (35 mOhm @ 5A, 10V). The RTQ045N03TR is marked "Not For New Designs," indicating it is suitable only for legacy system maintenance.

Q: Can I use the SI3456DDV-T1-GE3 as a drop-in replacement?

A: Yes. The SI3456DDV-T1-GE3 is housed in the same SOT-23-6 Thin package as the FDC653N, maintains 30V Vdss rating, and exceeds the 5A continuous drain current requirement with 6.3A capability. The device carries Active product status and full RoHS3 compliance. Electrical parameters are compatible with FDC653N applications.

Q: Why are some substitutes marked "Not For New Designs"?

A: Parts marked "Not For New Designs" are in the final stages of product lifecycle management. Manufacturers designate these parts to encourage migration to newer alternatives while maintaining support for existing systems. These parts are suitable only for replacement in legacy applications where existing inventory or system compatibility requires their use. New product designs should use parts with Active status.

Q: What does "Obsolete" status mean for the SQ3456BEV-T1_GE3?

A: Obsolete status indicates the manufacturer has discontinued production and support for this part. While 6400 pieces remain in inventory, no future supply is guaranteed. The SQ3456BEV-T1_GE3 should not be used in new designs. Existing systems using this part should plan migration to active alternatives such as the SI3456DDV-T1-GE3.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference carry RoHS3 compliance status. The FDC653N and all recommended substitutes meet RoHS3 requirements for hazardous substance restrictions.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects switching speed and driver circuit requirements. The FDC653N has 17 nC gate charge at 10V. Lower gate charge values (such as the SI3456DDV-T1-GE3 at 9 nC) result in faster switching transitions and reduced driver power dissipation. Higher gate charge values require more driver current to achieve the same switching speed. Gate charge differences are relevant only in high-frequency switching applications; for DC or low-frequency applications, gate charge has minimal impact.

Q: Can I use the RTQ020N03TR or RSQ020N03TR for my application?

A: The RTQ020N03TR and RSQ020N03TR are rated for only 2A continuous drain current, compared to the FDC653N's 5A rating. These parts are suitable only if your application requires less than 2A continuous drain current. If your design requires 5A capability, these parts are not appropriate substitutes.

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