FDC6432SH MOSFET N/P-Channel Equivalent & Substitute Parts

Part Overview

The FDC6432SH is an obsolete complementary MOSFET array manufactured by onsemi, featuring integrated N-channel and P-channel transistors in a SuperSOT™-6 surface mount package. This dual-channel configuration operates at 30V and 12V ratings with continuous drain currents of 2.4A and 2.5A respectively, delivering 700mW maximum power dissipation. The device incorporates logic-level gate drive capability, making it suitable for low-voltage switching applications requiring compact form factors.

Due to its obsolete product status, sourcing the FDC6432SH presents supply chain challenges. Identifying equivalent and substitute parts requires matching critical electrical parameters including drain-source voltage ratings, continuous drain current capabilities, on-resistance characteristics, and compatible surface mount packaging to ensure functional equivalence in existing circuit designs.

Key Parameters

Parameter	FDC6432SH	Unit
Configuration	N and P-Channel	—
Drain to Source Voltage (Vdss)	30V, 12V	V
Current - Continuous Drain (Id) @ 25°C	2.4A, 2.5A	A
Rds On (Max) @ Id, Vgs	90mOhm @ 2.4A, 10V	mOhm
Vgs(th) (Max) @ Id	3V @ 1mA	V
Gate Charge (Qg) (Max) @ Vgs	3.5nC @ 5V	nC
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 15V	pF
Power - Max	700mW	mW
Operating Temperature Range	-55°C to 150°C	°C
Mounting Type	Surface Mount	—
Package / Case	SOT-23-6 Thin, TSOT-23-6	—
FET Feature	Logic Level Gate	—
Technology	MOSFET (Metal Oxide)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the FDC6432SH requires matching the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Configuration: N and P-Channel complementary pair
Drain-Source Voltage (Vdss): Minimum 30V rating for the N-channel device
Continuous Drain Current (Id): Minimum 2.4A capability
On-Resistance (Rds On): Comparable performance at specified gate and drain conditions
Gate Charge (Qg): Low gate charge for efficient switching
Input Capacitance (Ciss): Minimal parasitic capacitance for high-frequency operation
Logic-Level Gate Drive: Threshold voltage suitable for standard logic signal levels
Operating Temperature Range: -55°C to 150°C compatibility

Mechanical Compatibility Criteria:

Surface Mount Technology: Required for PCB integration
Package Type: SOT-23-6 Thin or equivalent 6-pin surface mount packages
Moisture Sensitivity Level: MSL 1 (Unlimited) for standard handling

The substitute parts listed below satisfy these criteria within acceptable engineering tolerances for functional equivalence.

Parameter Comparison

Parameter	FDC6432SH (onsemi)	NTHD3100CT1G (onsemi)	BSL308CH6327XTSA1 (Infineon)	Unit
Configuration	N and P-Channel	N and P-Channel	N and P-Channel Complementary	—
Drain to Source Voltage (Vdss)	30V, 12V	20V	30V	V
Current - Continuous Drain (Id) @ 25°C	2.4A, 2.5A	2.9A, 3.2A	2.3A, 2A	A
Rds On (Max) @ Id, Vgs	90mOhm @ 2.4A, 10V	80mOhm @ 2.9A, 4.5V	57mOhm @ 2.3A, 10V	mOhm
Vgs(th) (Max) @ Id	3V @ 1mA	1.2V @ 250µA	2V @ 11µA	V
Gate Charge (Qg) (Max) @ Vgs	3.5nC @ 5V	2.3nC @ 4.5V	1.5nC @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 15V	165pF @ 10V	275pF @ 15V	pF
Power - Max	700mW	1.1W	500mW	mW
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C	°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
Package / Case	SOT-23-6 Thin, TSOT-23-6	8-SMD, Flat Lead	SOT-23-6 Thin, TSOT-23-6	—
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate, 4.5V Drive	—
Product Status	Obsolete	Active	Active	—

Engineering Selection Recommendations

NTHD3100CT1G (onsemi): This substitute offers active product status with improved electrical performance characteristics. The device provides higher continuous drain current (2.9A, 3.2A) and lower on-resistance (80mOhm) compared to the FDC6432SH. However, the maximum drain-source voltage is limited to 20V, which is below the 30V rating of the original part. This substitute is suitable for applications where the 20V voltage rating is sufficient. The NTHD3100CT1G features ChipFET™ packaging with 8-SMD flat lead configuration, requiring PCB layout verification for pin compatibility. RoHS3 compliance is confirmed.

BSL308CH6327XTSA1 (Infineon Technologies): This substitute provides the closest electrical and mechanical equivalence to the FDC6432SH. The device maintains the 30V drain-source voltage rating and offers superior on-resistance performance (57mOhm) with lower gate charge (1.5nC). The BSL308CH6327XTSA1 is packaged in SOT-23-6 Thin format, matching the original package specification. The device carries automotive-grade qualification (AEC-Q101) and active product status, ensuring long-term supply availability. RoHS3 compliance is confirmed. The 4.5V drive capability provides enhanced gate drive flexibility for logic-level applications.

Selection Basis:

Both substitute parts maintain active product status, ensuring supply chain continuity
Both devices support the required operating temperature range (-55°C to 150°C)
Both incorporate logic-level gate drive capability
Moisture sensitivity level (MSL 1) matches the original specification
REACH and ECCN compliance status is equivalent across all three parts

The BSL308CH6327XTSA1 is the primary recommendation for direct replacement due to voltage rating equivalence and package compatibility. The NTHD3100CT1G serves as an alternative for applications with reduced voltage requirements.

Frequently Asked Questions (FAQ)

Q: Can the NTHD3100CT1G replace the FDC6432SH in all applications?

A: The NTHD3100CT1G is functionally equivalent for applications operating at 20V or below. The reduced maximum drain-source voltage (20V versus 30V) limits its use in circuits requiring the full 30V rating of the original part. Verify circuit voltage requirements before substitution.

Q: What are the package differences between the substitute parts?

A: The FDC6432SH and BSL308CH6327XTSA1 both use SOT-23-6 Thin packaging, ensuring direct PCB compatibility. The NTHD3100CT1G uses 8-SMD flat lead ChipFET™ packaging, which requires verification of pin assignments and PCB footprint compatibility before implementation.

Q: Are the substitute parts RoHS compliant?

A: The BSL308CH6327XTSA1 and NTHD3100CT1G are both RoHS3 compliant. The original FDC6432SH does not specify RoHS status due to its obsolete classification. Both substitutes meet current environmental compliance requirements.

Q: How do the on-resistance values compare?

A: The BSL308CH6327XTSA1 offers the lowest on-resistance at 57mOhm, followed by the NTHD3100CT1G at 80mOhm, and the original FDC6432SH at 90mOhm. Lower on-resistance reduces power dissipation and heat generation in switching applications.

Q: What is the significance of gate charge differences?

A: Gate charge (Qg) affects switching speed and gate drive power requirements. The BSL308CH6327XTSA1 has the lowest gate charge (1.5nC), enabling faster switching transitions and reduced driver power consumption compared to the FDC6432SH (3.5nC).

Q: Are the substitute parts suitable for automotive applications?

A: The BSL308CH6327XTSA1 carries automotive-grade qualification (AEC-Q101), making it suitable for automotive applications. The NTHD3100CT1G does not specify automotive qualification. Verify application requirements before selecting either substitute.

Q: What is the moisture sensitivity level for these parts?

A: All three parts, including the FDC6432SH and both substitutes, have MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions during standard handling and storage.

Q: Can I use the BSL308CH6327XTSA1 as a direct drop-in replacement?

A: The BSL308CH6327XTSA1 is compatible with the FDC6432SH PCB footprint due to identical SOT-23-6 Thin packaging. Electrical parameters are within acceptable substitution tolerances. Verify gate drive voltage compatibility (4.5V drive capability) with existing circuit design before implementation.

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