FDC633N_F095 Equivalent & Substitute Parts

Part Overview

The FDC633N_F095 is an N-Channel 30V 5.2A MOSFET manufactured by onsemi in SuperSOT-6 surface mount packaging. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing production and maintenance applications. The part operates across a temperature range of -55°C to 150°C (TJ) with a maximum power dissipation of 1.6W (Ta). Substitution is required for designs requiring active product status or enhanced electrical performance characteristics.

Substiute Parts

FDC633N_F095
onsemiIn Stock: 1054FDC633N_F095 Datasheet
FDC633N_F095
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FDC655BN
onsemiIn Stock: 65158FDC655BN Datasheet
FDC655BN
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AO6424A
Alpha & Omega Semiconductor Inc.In Stock: 2645AO6424A Datasheet
AO6424A
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RSQ020N03TR
Rohm SemiconductorIn Stock: 17728RSQ020N03TR Datasheet
RSQ020N03TR
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RSQ045N03TR
Rohm SemiconductorIn Stock: 17949RSQ045N03TR Datasheet
RSQ045N03TR
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RTQ020N03TR
Rohm SemiconductorIn Stock: 8343RTQ020N03TR Datasheet
RTQ020N03TR
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RTQ035N03TR
Rohm SemiconductorIn Stock: 47273RTQ035N03TR Datasheet
RTQ035N03TR
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RTQ045N03TR
Rohm SemiconductorIn Stock: 55244RTQ045N03TR Datasheet
RTQ045N03TR
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SI3456DDV-T1-GE3
Vishay SiliconixIn Stock: 53921SI3456DDV-T1-GE3 Datasheet
SI3456DDV-T1-GE3
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 5.2 A (Ta)
Rds On (Max) @ Id, Vgs 42 mOhm @ 5.2A, 4.5V
Gate Threshold Voltage Vgs(th) (Max) @ Id 1 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 538 pF @ 10V
Power Dissipation (Max) 1.6 W (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type SuperSOT-6 / SOT-23-6 Thin
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FDC633N_F095 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): Must equal 30V
  • FET Type: Must be N-Channel MOSFET
  • Continuous Drain Current (Id): Must meet or exceed 5.2A at 25°C
  • On-State Resistance (Rds On): Must not exceed 42mOhm at rated current and gate voltage
  • Operating Temperature Range: Must support -55°C to 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package Compatibility: SuperSOT-6 or equivalent 6-pin surface mount packages

Secondary Compatibility Parameters:

  • Gate Threshold Voltage (Vgs(th)): Acceptable range 1V to 3V @ 250µA
  • Gate Charge (Qg): Lower values preferred for switching efficiency
  • Input Capacitance (Ciss): Acceptable range 110pF to 570pF @ 10V-15V
  • Power Dissipation: Must support minimum 1.6W (Ta)
  • Moisture Sensitivity: MSL 1 preferred for unlimited shelf life

Substitute parts are grouped into two categories: Direct Equivalents (matching package and performance envelope) and Functional Alternatives (meeting electrical specifications with package variations).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Ciss (pF) Power Diss. (W) Package Status
FDC633N_F095 onsemi 30 5.2 42 @ 5.2A, 4.5V 1 @ 250µA 16 @ 4.5V 538 @ 10V 1.6 SuperSOT-6 Obsolete
FDC655BN onsemi 30 6.3 25 @ 6.3A, 10V 3 @ 250µA 15 @ 10V 570 @ 15V 1.6 SuperSOT-6 Active
AO6424A Alpha & Omega Semiconductor Inc. 30 6.5 35 @ 5A, 10V 2.4 @ 250µA 12 @ 10V 270 @ 15V 2.5 6-TSOP Active
RSQ020N03TR Rohm Semiconductor 30 2 134 @ 2A, 10V 2.5 @ 1mA 3.1 @ 5V 110 @ 10V 0.6 TSMT6 Active
RSQ045N03TR Rohm Semiconductor 30 4.5 38 @ 4.5A, 10V 2.5 @ 1mA 9.5 @ 5V 520 @ 10V 0.6 TSMT6 Active
RTQ020N03TR Rohm Semiconductor 30 2 125 @ 2A, 4.5V 1.5 @ 1mA 3.3 @ 4.5V 135 @ 10V 1.25 TSMT6 Active
RTQ035N03TR Rohm Semiconductor 30 3.5 54 @ 3.5A, 4.5V 1.5 @ 1mA 6.4 @ 4.5V 285 @ 10V 1.25 TSMT6 Not For New Designs
RTQ045N03TR Rohm Semiconductor 30 4.5 43 @ 4.5A, 4.5V 1.5 @ 1mA 10.7 @ 4.5V 540 @ 10V 1.25 TSMT6 Not For New Designs
SI3456DDV-T1-GE3 Vishay Siliconix 30 6.3 40 @ 5A, 10V 3 @ 250µA 9 @ 10V 325 @ 15V 1.7 (Ta), 2.7 (Tc) 6-TSOP Active

Engineering Selection Recommendations

Primary Recommendation: FDC655BN

The FDC655BN is the optimal direct substitute for the FDC633N_F095. Both devices share identical Vdss (30V), package type (SuperSOT-6), power dissipation rating (1.6W Ta), and operating temperature range (-55°C to 150°C TJ). The FDC655BN provides superior continuous drain current (6.3A versus 5.2A) and lower on-state resistance (25mOhm versus 42mOhm), delivering enhanced performance headroom. The FDC655BN holds Active product status with RoHS3 compliance and REACH Unaffected designation, ensuring long-term availability and regulatory alignment.

Secondary Recommendation: SI3456DDV-T1-GE3

The SI3456DDV-T1-GE3 (Vishay Siliconix TrenchFET) meets all electrical specifications with 30V Vdss, 6.3A continuous drain current, and superior on-state resistance (40mOhm). This device operates across the full temperature range and maintains Active product status. The 6-TSOP package differs from SuperSOT-6 but provides equivalent pinout compatibility for most applications. Power dissipation is rated at 1.7W (Ta) and 2.7W (Tc), exceeding the original specification. RoHS3 compliance and REACH Unaffected status confirm regulatory compliance.

Alternative for Current-Limited Applications: RTQ045N03TR

The RTQ045N03TR (Rohm Semiconductor) provides 4.5A continuous drain current with 43mOhm on-state resistance at 4.5V gate drive, closely matching the FDC633N_F095 electrical envelope. This device is suitable for applications where 5.2A current capacity is not critical. The RTQ045N03TR carries Active product status in the Rohm portfolio, though it is marked "Not For New Designs." The TSMT6 package requires PCB layout verification for compatibility.

Compliance Status:

All recommended substitutes maintain MSL 1 (Unlimited) moisture sensitivity, REACH Unaffected status, and EAR99 export classification. FDC655BN and SI3456DDV-T1-GE3 hold RoHS3 Compliant certification. RTQ045N03TR and RTQ035N03TR are marked "Not For New Designs," limiting their suitability for new product development.

Frequently Asked Questions (FAQ)

Q: Can the FDC655BN directly replace the FDC633N_F095 without PCB modifications?

A: Yes. Both devices use SuperSOT-6 packaging with identical pinout and footprint. No PCB layout changes are required. The FDC655BN provides superior electrical performance with higher current rating and lower on-state resistance.

Q: What is the key difference between SuperSOT-6 and 6-TSOP packages?

A: SuperSOT-6 and 6-TSOP are distinct package types with different physical dimensions and thermal characteristics. While both are 6-pin surface mount packages, PCB footprints are not interchangeable. Verify footprint compatibility before substituting SI3456DDV-T1-GE3 or AO6424A for the original SuperSOT-6 device.

Q: Why are RTQ045N03TR and RTQ035N03TR marked "Not For New Designs"?

A: Rohm Semiconductor designates these parts as "Not For New Designs," indicating they are in mature or end-of-life phases. While currently available in inventory, these parts are not recommended for new product development. Use FDC655BN or SI3456DDV-T1-GE3 for new designs.

Q: Does the FDC633N_F095 obsolete status affect warranty or support?

A: The FDC633N_F095 is classified as obsolete, meaning onsemi no longer manufactures or supports this device. Existing inventory remains available, but long-term supply cannot be guaranteed. Transition to FDC655BN or SI3456DDV-T1-GE3 for sustained production.

Q: What is the significance of MSL 1 (Unlimited) moisture sensitivity?

A: MSL 1 indicates unlimited shelf life without moisture bake-out requirements. All recommended substitutes carry MSL 1 classification, ensuring compatibility with standard storage and handling procedures.

Q: Can RSQ020N03TR or RTQ020N03TR substitute for the FDC633N_F095?

A: No. Both devices are rated for only 2A continuous drain current, significantly below the FDC633N_F095 specification of 5.2A. These parts are unsuitable for applications requiring the original device's current capacity.

Q: What is the thermal difference between Ta and Tc power dissipation ratings?

A: Ta (ambient temperature) represents power dissipation under free-air conditions. Tc (case temperature) represents power dissipation with controlled case temperature, typically lower than Ta. SI3456DDV-T1-GE3 specifies both ratings (1.7W Ta, 2.7W Tc), providing flexibility for thermal management calculations.

Q: Are all substitute parts RoHS3 compliant?

A: FDC655BN, AO6424A, RSQ020N03TR, RSQ045N03TR, RTQ020N03TR, RTQ035N03TR, RTQ045N03TR, and SI3456DDV-T1-GE3 all carry RoHS3 Compliant certification. Compliance ensures compatibility with environmental and regulatory requirements.

Q: What is the operating temperature range for all substitute parts?

A: FDC655BN and SI3456DDV-T1-GE3 support -55°C to 150°C (TJ), matching the original FDC633N_F095. Rohm devices (RSQ and RTQ series) support -55°C to 150°C (TJ) or specify 150°C (TJ) maximum. Verify specific temperature requirements for your application.

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