FDC6304P Equivalent & Substitute Parts

Part Overview

The FDC6304P is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications in logic-level gate switching circuits. This device features a 25V drain-to-source voltage rating with 460mA continuous drain current capability and is housed in a SuperSOT™-6 package. The FDC6304P is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the dual P-channel configuration, logic-level gate operation, and surface mount deployment while accommodating the electrical performance envelope of the original specification.

Substiute Parts

FDC6304P
onsemiIn Stock: 86376FDC6304P Datasheet
FDC6304P
Current Part
NTJD4152PT1G
onsemiIn Stock: 75814NTJD4152PT1G Datasheet
NTJD4152PT1G
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Key Parameters

Parameter Value Unit
Configuration 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 25V V
Current - Continuous Drain (Id) @ 25°C 460mA mA
Rds On (Max) @ Id, Vgs 1.1Ω @ 500mA, 4.5V Ω
Vgs(th) (Max) @ Id 1.5V @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V nC
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 10V pF
Power - Max 700mW mW
Operating Temperature Range -55°C to 150°C °C
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
FET Feature Logic Level Gate
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FDC6304P is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Configuration: Dual P-channel MOSFET array
  • FET Feature: Logic level gate operation
  • Technology: Metal oxide MOSFET
  • Mounting Type: Surface mount
  • Operating Temperature Range: -55°C to 150°C minimum

Electrical Performance Envelope: Substitute parts must satisfy the following conditions:

  • Drain to Source Voltage (Vdss) rating equal to or greater than 25V
  • Continuous drain current (Id) at 25°C equal to or greater than 460mA
  • On-state resistance (Rds On) at specified gate voltage compatible with application requirements
  • Gate threshold voltage (Vgs(th)) within logic-level specifications
  • Maximum power dissipation adequate for the application thermal environment

Mechanical and Compliance Requirements:

  • Surface mount package configuration
  • RoHS3 compliance
  • MSL rating of 1 (Unlimited)
  • REACH unaffected status

The NTJD4152PT1G meets the dual P-channel configuration, logic-level gate, metal oxide technology, surface mount deployment, and compliance requirements. While the Vdss rating is reduced to 20V and the package format differs (SC-88/SOT-363 versus SuperSOT™-6), the continuous drain current capability is increased to 880mA, providing enhanced current handling within a lower voltage envelope.

Parameter Comparison

Parameter FDC6304P NTJD4152PT1G Unit
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V 20V V
Current - Continuous Drain (Id) @ 25°C 460mA 880mA mA
Rds On (Max) @ Id, Vgs 1.1Ω @ 500mA, 4.5V 260mΩ @ 880mA, 4.5V Ω
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.2V @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V 2.2nC @ 4.5V nC
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 10V 155pF @ 20V pF
Power - Max 700mW 272mW mW
Operating Temperature Range -55°C to 150°C -55°C to 150°C °C
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 6-TSSOP, SC-88, SOT-363
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active

Engineering Selection Recommendations

Product Status Consideration: The FDC6304P is classified as obsolete, while the NTJD4152PT1G maintains active product status with current manufacturing availability. Selection of the NTJD4152PT1G addresses supply chain continuity and long-term component availability for production environments.

Compliance and Certification: Both the FDC6304P and NTJD4152PT1G are ROHS3 compliant, REACH unaffected, and carry MSL rating of 1 (Unlimited). Both devices meet the same regulatory and environmental standards, ensuring equivalent compliance posture in regulated applications.

Electrical Performance Trade-offs: The NTJD4152PT1G operates at a reduced Vdss rating of 20V compared to the FDC6304P at 25V. Applications operating at voltages exceeding 20V require verification that the substitute part's voltage rating is adequate. Conversely, the NTJD4152PT1G provides nearly double the continuous drain current capability (880mA versus 460mA) and significantly lower on-state resistance (260mΩ versus 1.1Ω), resulting in reduced power dissipation and improved thermal performance in current-limited applications.

Package Compatibility: The FDC6304P uses SuperSOT™-6 packaging, while the NTJD4152PT1G uses SC-88/SOT-363 packaging. PCB layout modifications are required for package substitution. Pin configuration and footprint differences necessitate circuit board redesign.

Selection Basis: Selection of NTJD4152PT1G as a substitute is appropriate for applications where the 20V Vdss rating is sufficient, package redesign is feasible, and the enhanced current handling and reduced on-state resistance provide performance benefits. The active product status ensures ongoing availability and manufacturing support.

Frequently Asked Questions (FAQ)

Q: Can the NTJD4152PT1G directly replace the FDC6304P without PCB modifications?

A: No. The NTJD4152PT1G uses SC-88/SOT-363 packaging while the FDC6304P uses SuperSOT™-6 packaging. These packages have different footprints, pin counts, and physical dimensions. PCB layout redesign is required for substitution.

Q: What is the primary limitation of the NTJD4152PT1G as a substitute?

A: The NTJD4152PT1G has a maximum Vdss rating of 20V compared to the FDC6304P at 25V. Applications requiring operation above 20V drain-to-source voltage cannot use this substitute without circuit redesign to reduce operating voltage.

Q: Are both devices suitable for logic-level gate applications?

A: Yes. Both the FDC6304P and NTJD4152PT1G feature logic-level gate operation with Vgs(th) specifications compatible with standard logic signal levels. The NTJD4152PT1G has a slightly lower threshold voltage (1.2V versus 1.5V), providing improved gate drive margin.

Q: What are the thermal performance differences between these devices?

A: The NTJD4152PT1G has a maximum power rating of 272mW compared to the FDC6304P at 700mW. However, the NTJD4152PT1G's significantly lower on-state resistance (260mΩ versus 1.1Ω) results in reduced power dissipation at equivalent current levels, improving thermal performance in practical applications.

Q: Do both devices meet the same environmental and compliance standards?

A: Yes. Both devices are ROHS3 compliant, REACH unaffected, and carry MSL rating of 1 (Unlimited). They meet identical regulatory and environmental standards for use in regulated applications.

Q: What is the significance of the NTJD4152PT1G being an active product?

A: Active product status indicates current manufacturing, ongoing availability, and manufacturer support. The FDC6304P's obsolete status means limited or no future availability, making the NTJD4152PT1G preferable for new designs and long-term production requirements.

Q: How do the gate charge specifications compare?

A: The NTJD4152PT1G has a higher gate charge (2.2nC versus 1.5nC at 4.5V). This requires slightly more gate drive energy but remains within typical logic-level gate drive capabilities and does not preclude substitution in standard applications.

Q: Can the NTJD4152PT1G handle higher current than the FDC6304P?

A: Yes. The NTJD4152PT1G is rated for 880mA continuous drain current compared to 460mA for the FDC6304P. This provides enhanced current handling capability, though the lower Vdss rating must be considered in voltage-limited applications.

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