FDC604P Equivalent & Substitute Parts

Part Overview

The FDC604P is an active P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 5.5A continuous drain current at 25°C. The device is packaged in SuperSOT™-6 (SOT-23-6 Thin, TSOT-23-6) surface mount configuration and complies with RoHS3 and REACH standards. This part is suitable for applications requiring low on-resistance switching in compact form factors. Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters while maintaining compatibility with the specified voltage and current ratings.

Key Parameters

Parameter	FDC604P Value	Unit
Drain-to-Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	5.5	A
On-Resistance (Rds On Max) @ Id, Vgs	33 mOhm @ 5.5A, 4.5V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	1.5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	30	nC @ 4.5V
Maximum Gate Voltage (Vgs Max)	±8	V
Input Capacitance (Ciss Max) @ Vds	1926	pF @ 10V
Power Dissipation (Max)	1.6	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SuperSOT™-6	SOT-23-6 Thin
FET Type	P-Channel	MOSFET
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FDC604P are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 20V
Continuous Drain Current (Id): Must equal or exceed 5.5A at rated temperature
FET Type: P-Channel MOSFET (Metal Oxide Semiconductor)
On-Resistance (Rds On): Must not exceed the specified maximum at rated conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible with 4.5V drive voltage
Operating Temperature Range: Must support -55°C to 150°C minimum
Compliance: RoHS3 and REACH standards required

Secondary Compatibility Factors:

Mounting Type: Surface Mount
Package compatibility: Pin-compatible or functionally equivalent packages
Gate Charge (Qg): Lower values indicate faster switching capability
Input Capacitance (Ciss): Affects gate drive requirements

The three substitute parts listed below meet or exceed these criteria and are suitable for direct replacement in applications where the FDC604P is specified.

Parameter Comparison

Parameter	FDC604P (onsemi)	NTHS4101PT1G (onsemi)	PMN30XPAX (Nexperia)	SI3407DV-T1-GE3 (Vishay)
Vdss (V)	20	20	20	20
Id @ 25°C (A)	5.5 (Ta)	4.8 (Tj)	5.2 (Ta)	8.0 (Tc)
Rds On Max (mOhm)	33 @ 5.5A, 4.5V	34 @ 4.8A, 4.5V	33 @ 5.2A, 8V	24 @ 7.5A, 4.5V
Vgs(th) Max @ 250µA (V)	1.5	1.5	1.3	1.5
Qg Max @ Vgs (nC)	30 @ 4.5V	35 @ 4.5V	16 @ 4.5V	63 @ 10V
Vgs Max (V)	±8	±8	±12	±12
Ciss Max @ Vds (pF)	1926 @ 10V	2100 @ 16V	1039 @ 10V	1670 @ 10V
Power Dissipation Max (W)	1.6 (Ta)	1.3 (Ta)	0.66 (Ta) / 7.5 (Tc)	4.2 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 150
Package	SuperSOT™-6 (SOT-23-6)	ChipFET™ (8-SMD)	6-TSOP (SC-74)	6-TSOP (SOT-23-6)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity	MSL 1	MSL 1	MSL 1	MSL 1

Engineering Selection Recommendations

NTHS4101PT1G (onsemi)

This substitute is manufactured by the same supplier as the FDC604P and maintains identical gate threshold voltage and maximum gate voltage specifications. The continuous drain current rating of 4.8A is slightly lower than the FDC604P at 5.5A, making this part suitable for applications where the full 5.5A rating is not required. On-resistance is comparable at 34 mOhm versus 33 mOhm. The ChipFET™ package differs from SuperSOT™-6, requiring PCB layout verification for pin compatibility. Both parts are RoHS3 compliant with MSL 1 rating and active product status.

PMN30XPAX (Nexperia USA Inc.)

This substitute offers a continuous drain current of 5.2A, which approaches the FDC604P rating of 5.5A. On-resistance is equivalent at 33 mOhm. The part features an extended maximum gate voltage rating of ±12V compared to ±8V for the FDC604P, providing additional design margin. Operating temperature extends to 175°C, exceeding the FDC604P specification. The 6-TSOP package differs from SuperSOT™-6. This part carries AEC-Q101 automotive qualification and is RoHS3 compliant with MSL 1 rating. Product status is active.

SI3407DV-T1-GE3 (Vishay Siliconix)

This substitute provides the highest continuous drain current rating at 8A (measured at Tc), significantly exceeding the FDC604P requirement of 5.5A. On-resistance is superior at 24 mOhm versus 33 mOhm, indicating lower conduction losses. Maximum gate voltage rating is ±12V. Power dissipation capability is substantially higher at 4.2W (Tc). The 6-TSOP package requires PCB layout verification. All compliance requirements are met with RoHS3 and MSL 1 ratings. Product status is active.

Frequently Asked Questions (FAQ)

Q: Can NTHS4101PT1G directly replace FDC604P in all applications?

A: NTHS4101PT1G is electrically compatible for applications where continuous drain current does not exceed 4.8A. The lower current rating makes it unsuitable for designs requiring the full 5.5A capability of the FDC604P. Package differences (ChipFET™ versus SuperSOT™-6) require PCB layout verification.

Q: What are the package differences between these substitute parts?

A: FDC604P uses SuperSOT™-6 (SOT-23-6 Thin). NTHS4101PT1G uses ChipFET™ (8-SMD, Flat Lead). PMN30XPAX and SI3407DV-T1-GE3 both use 6-TSOP (SC-74 or SOT-457). Pin configurations differ; direct socket substitution is not possible without PCB redesign.

Q: Which substitute offers the best thermal performance?

A: SI3407DV-T1-GE3 provides the highest power dissipation rating at 4.2W (Tc) and the lowest on-resistance at 24 mOhm, resulting in reduced heat generation during operation. PMN30XPAX offers dual power ratings (0.66W Ta / 7.5W Tc), indicating superior thermal management capability.

Q: Are all substitutes suitable for automotive applications?

A: PMN30XPAX carries AEC-Q101 automotive qualification. FDC604P, NTHS4101PT1G, and SI3407DV-T1-GE3 do not list automotive qualification in the provided specifications.

Q: What is the gate charge difference impact?

A: FDC604P has 30 nC gate charge at 4.5V. PMN30XPAX has the lowest at 16 nC, enabling faster switching. SI3407DV-T1-GE3 has the highest at 63 nC at 10V, requiring higher gate drive current. Lower gate charge reduces switching losses and improves efficiency.

Q: Do all parts meet the same compliance standards?

A: All four parts are RoHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating. All are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the maximum operating temperature difference?

A: FDC604P, NTHS4101PT1G, and SI3407DV-T1-GE3 operate to 150°C (TJ). PMN30XPAX extends to 175°C (TJ), providing 25°C additional thermal margin for high-temperature applications.

Q: Can these parts be used interchangeably in existing PCB designs?

A: No. Package differences prevent direct socket substitution. NTHS4101PT1G uses 8-SMD ChipFET™ versus SuperSOT™-6. PMN30XPAX and SI3407DV-T1-GE3 use 6-TSOP packages. PCB layout and routing must be verified for each substitute part.

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