FDC6036P Equivalent & Substitute Parts

Part Overview

The FDC6036P is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the PowerTrench® series. This component features a 20V drain-to-source voltage rating with 5A continuous drain current capability and 900mW maximum power dissipation. The device is packaged in a 6-SSOT Flat-lead SuperSOT™-6 configuration and incorporates logic level gate operation for direct interface with standard digital logic circuits.

The FDC6036P is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to support legacy system maintenance, design updates, and procurement continuity when original inventory becomes unavailable.

Substiute Parts

FDC6036P
onsemiIn Stock: 22987FDC6036P Datasheet
FDC6036P
Current Part
NTHD4102PT1G
onsemiIn Stock: 41313NTHD4102PT1G Datasheet
NTHD4102PT1G
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5 A
Rds On (Max) @ Id, Vgs 44 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 992 pF @ 10V
Power - Max 900 mW
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Mounting Type Surface Mount
Package / Case 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FDC6036P is evaluated based on the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 20V
  • Configuration: Must maintain 2 P-Channel (Dual) topology
  • FET Feature: Must support Logic Level Gate operation
  • Operating Temperature Range: Must encompass -55°C to 150°C (TJ)
  • Channel Type: Must be P-Channel

Mechanical Compatibility Criteria:

  • Mounting Type: Must be Surface Mount
  • Technology: Must be MOSFET (Metal Oxide)

Performance Considerations:

  • Current - Continuous Drain (Id): Substitute must support minimum 5A at 25°C for direct replacement
  • Rds On: Lower or equal values indicate improved performance
  • Power Dissipation: Substitute must support minimum 900mW

The NTHD4102PT1G is identified as a substitute part. While this device exhibits reduced continuous drain current (2.9A versus 5A) and increased on-resistance (80mOhm versus 44mOhm), it maintains electrical compatibility across voltage ratings, channel configuration, gate operation, and temperature range. The substitute is suitable for applications where the reduced current rating does not exceed circuit requirements.

Parameter Comparison

Parameter FDC6036P NTHD4102PT1G Unit
Manufacturer onsemi onsemi
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20 20 V
Current - Continuous Drain (Id) @ 25°C 5 2.9 A
Rds On (Max) @ Id, Vgs 44 @ 5A, 4.5V 80 @ 2.9A, 4.5V mOhm
Vgs(th) (Max) @ Id 1.5 @ 250µA 1.5 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 14 @ 4.5V 8.6 @ 4.5V nC
Input Capacitance (Ciss) (Max) @ Vds 992 @ 10V 750 @ 16V pF
Power - Max 900 1.1 mW
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-SSOT Flat-lead, SuperSOT™-6 FLMP 8-SMD, Flat Lead
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active

Engineering Selection Recommendations

FDC6036P (Original Part): The FDC6036P is classified as obsolete. New procurement of this component is not recommended for new designs. Existing inventory may be available through authorized distributors for legacy system support and maintenance applications.

NTHD4102PT1G (Substitute Part): The NTHD4102PT1G is an active product manufactured by onsemi and is available in production quantities. This substitute maintains full electrical compatibility with the FDC6036P across voltage ratings, channel configuration, gate operation, and temperature range. The device is RoHS3 compliant and carries REACH Unaffected status, meeting current environmental and regulatory requirements.

Selection Criteria:

  • Use NTHD4102PT1G for new designs and legacy system updates where the reduced continuous drain current (2.9A) and increased on-resistance (80mOhm) do not exceed circuit requirements
  • Use NTHD4102PT1G when active product status and regulatory compliance are required
  • Verify circuit current requirements do not exceed 2.9A continuous drain current before substitution
  • Account for package differences: FDC6036P uses 6-SSOT Flat-lead SuperSOT™-6, while NTHD4102PT1G uses 8-SMD Flat Lead

Frequently Asked Questions (FAQ)

Q: Can the NTHD4102PT1G directly replace the FDC6036P in all applications?

A: The NTHD4102PT1G is electrically compatible with the FDC6036P across voltage ratings, channel configuration, and temperature range. However, the substitute exhibits reduced continuous drain current (2.9A versus 5A) and increased on-resistance (80mOhm versus 44mOhm). Direct replacement is suitable only for applications where circuit current requirements do not exceed 2.9A continuous drain current. Package differences must also be accommodated in PCB layout.

Q: What are the key electrical differences between these parts?

A: The primary electrical differences are continuous drain current and on-resistance. The FDC6036P supports 5A continuous drain current with 44mOhm on-resistance, while the NTHD4102PT1G supports 2.9A continuous drain current with 80mOhm on-resistance. Both devices share identical voltage ratings (20V Vdss), threshold voltage (1.5V @ 250µA), and operating temperature range (-55°C to 150°C).

Q: Are there package compatibility considerations?

A: Yes. The FDC6036P uses a 6-SSOT Flat-lead SuperSOT™-6 package, while the NTHD4102PT1G uses an 8-SMD Flat Lead package. PCB layout and footprint modifications are required for substitution. Pin configuration and lead spacing differ between these packages.

Q: What is the product status difference between these parts?

A: The FDC6036P is classified as obsolete and is no longer in active production. The NTHD4102PT1G is an active product with current manufacturing support and availability. For new designs and systems requiring long-term component availability, the NTHD4102PT1G is the recommended choice.

Q: Are both parts compliant with current environmental regulations?

A: The FDC6036P carries REACH Unaffected status and MSL 1 (Unlimited) rating. The NTHD4102PT1G is RoHS3 compliant, REACH Unaffected, and carries MSL 1 (Unlimited) rating. Both devices meet current environmental and regulatory requirements for their respective product statuses.

Q: How do gate charge and input capacitance compare?

A: The FDC6036P exhibits higher gate charge (14nC @ 4.5V) and input capacitance (992pF @ 10V) compared to the NTHD4102PT1G (8.6nC @ 4.5V and 750pF @ 16V). Lower gate charge and capacitance in the substitute may result in faster switching characteristics and reduced gate drive requirements.

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