FDC3616N Equivalent & Substitute Parts

Part Overview

The FDC3616N is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 3.7A continuous drain current at 25°C. The device is housed in a SuperSOT™-6 FLMP surface mount package and is designed for general-purpose switching applications requiring moderate current handling in compact form factors.

The FDC3616N is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this device.

Substiute Parts

FDC3616N
onsemiIn Stock: 1177FDC3616N Datasheet
FDC3616N
Current Part
FDMC8622
onsemiIn Stock: 23128FDMC8622 Datasheet
FDMC8622
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 3.7 A (Ta)
On-State Resistance (Rds On Max) @ Id, Vgs 70 mOhm @ 3.7A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 250µA
Gate Charge (Qg Max) @ Vgs 32 nC @ 10V
Input Capacitance (Ciss Max) @ Vds 1215 pF @ 50V
Power Dissipation (Max) 2 W (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type SuperSOT™-6 FLMP 6-SSOT Flat-lead
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the FDC3616N is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
  • Continuous Drain Current (Id): Must meet or exceed 3.7A at 25°C ambient temperature
  • On-State Resistance (Rds On): Must not exceed 70mOhm at rated current and gate voltage
  • Gate Threshold Voltage (Vgs(th)): Must remain within ±20V maximum gate voltage specification
  • Operating Temperature Range: Must support -55°C to 150°C junction temperature range

Mechanical Compatibility Criteria:

  • Mounting Type: Surface mount configuration required
  • Package Footprint: Physical dimensions must accommodate existing PCB layouts or allow direct substitution

The FDMC8622 qualifies as a substitute part based on matching or exceeding all electrical parameters while maintaining surface mount compatibility. The FDMC8622 operates within the same voltage and temperature specifications and provides improved current handling and reduced on-state resistance characteristics.

Parameter Comparison

Parameter FDC3616N FDMC8622 Unit
Manufacturer onsemi onsemi
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 100 100 V
Continuous Drain Current (Id) @ 25°C 3.7 (Ta) 4 (Ta) A
On-State Resistance (Rds On Max) @ Id, Vgs 70 @ 3.7A, 10V 56 @ 4A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg Max) @ Vgs 32 @ 10V 7.3 @ 10V nC
Input Capacitance (Ciss Max) @ Vds 1215 @ 50V 402 @ 50V pF
Maximum Gate Voltage (Vgs Max) ±20 ±20 V
Power Dissipation (Max) @ Ta 2 2.5 W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Series PowerTrench® PowerTrench®
Product Status Obsolete Active

Engineering Selection Recommendations

FDMC8622 as Primary Substitute:

The FDMC8622 is the qualified substitute for the FDC3616N based on the following engineering factors:

  1. Electrical Performance: The FDMC8622 meets all minimum electrical requirements. It provides 4A continuous drain current at 25°C, exceeding the FDC3616N specification of 3.7A. On-state resistance is reduced to 56mOhm compared to 70mOhm, resulting in lower power dissipation and improved thermal performance.

  2. Product Status: The FDMC8622 is classified as Active, ensuring ongoing availability and long-term supply chain support. The FDC3616N is Obsolete, making the FDMC8622 the appropriate selection for new designs and production continuity.

  3. Compliance and Certifications: The FDMC8622 is RoHS3 Compliant and carries Moisture Sensitivity Level 1 (Unlimited), providing superior handling characteristics compared to the FDC3616N MSL 3 (168 Hours) rating. Both devices are REACH Unaffected and classified under ECCN EAR99.

  4. Thermal Characteristics: The FDMC8622 supports higher power dissipation (2.5W at Ta, 31W at Tc) due to its 8-MLP package design, offering enhanced thermal management for demanding applications.

  5. Gate Charge and Capacitance: The FDMC8622 exhibits significantly lower gate charge (7.3nC versus 32nC) and input capacitance (402pF versus 1215pF), enabling faster switching performance and reduced driver power requirements.

Package Consideration: The FDMC8622 uses an 8-PowerWDFN package (8-MLP 3.3x3.3) rather than the SuperSOT™-6 FLMP. PCB layout modifications are required for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can the FDMC8622 directly replace the FDC3616N without PCB modifications?

A: No. The FDMC8622 uses an 8-MLP (3.3x3.3) package footprint, while the FDC3616N uses a SuperSOT™-6 FLMP package. PCB layout and footprint changes are required. However, the electrical performance is fully compatible.

Q: What are the key electrical advantages of the FDMC8622 over the FDC3616N?

A: The FDMC8622 provides lower on-state resistance (56mOhm versus 70mOhm), reduced gate charge (7.3nC versus 32nC), and lower input capacitance (402pF versus 1215pF). These characteristics result in improved switching speed, reduced driver power consumption, and lower conduction losses.

Q: Why is the FDC3616N classified as Obsolete?

A: The FDC3616N is an older generation device in the PowerTrench® family. The FDMC8622 represents a newer, more efficient design with improved thermal performance and compliance certifications, making it the preferred choice for ongoing production.

Q: Are there any compliance differences between the two devices?

A: Yes. The FDMC8622 is RoHS3 Compliant with MSL 1 (Unlimited moisture sensitivity), while the FDC3616N carries MSL 3 (168 Hours). The FDMC8622 offers superior handling and storage flexibility. Both devices are REACH Unaffected.

Q: What is the impact of the lower gate charge in the FDMC8622?

A: Lower gate charge (7.3nC versus 32nC) reduces the charge that must be supplied by the gate driver circuit. This results in faster switching transitions, reduced driver power dissipation, and improved overall circuit efficiency.

Q: Can the FDMC8622 be used in applications requiring the exact SuperSOT™-6 FLMP package?

A: No. If the SuperSOT™-6 FLMP package is a hard requirement due to space constraints or existing PCB design, alternative N-Channel MOSFETs with matching package specifications must be evaluated. The FDMC8622 substitution requires PCB redesign.

Q: What is the thermal advantage of the FDMC8622's 8-MLP package?

A: The 8-MLP package provides significantly higher power dissipation capability (31W at Tc versus 2W at Ta for the FDC3616N). This larger package footprint enables better heat spreading and thermal management, making it suitable for higher-power applications.

Q: Are both devices rated for the same operating temperature range?

A: Yes. Both the FDC3616N and FDMC8622 operate across -55°C to 150°C junction temperature range, ensuring compatibility in thermal environments.

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