FDC3601N Equivalent & Substitute Parts

Part Overview

The FDC3601N is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the PowerTrench® series. This device features a 100V drain-to-source voltage rating with 1A continuous drain current capability and is housed in a SuperSOT™-6 package. The part maintains Active product status and is RoHS3 compliant, making it suitable for modern electronic applications requiring dual-channel switching functionality.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining identical or superior mechanical compatibility and compliance certifications.

Substiute Parts

FDC3601N
onsemiIn Stock: 40824FDC3601N Datasheet
FDC3601N
Current Part
FDC8602
onsemiIn Stock: 23409FDC8602 Datasheet
FDC8602
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1 A
Rds On (Max) @ Id, Vgs 500 mOhm @ 1A, 10V mOhm
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 153 pF @ 50V
Power - Max 700 mW
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case SOT-23-6 Thin, TSOT-23-6 -
Configuration 2 N-Channel (Dual) -

Substitute Part Grouping Explanation

Substitution eligibility for the FDC3601N is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain to Source Voltage (Vdss): 100V
  • Configuration: 2 N-Channel (Dual)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6 (SuperSOT™-6)
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)

Performance Compatibility Criteria:

  • Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 1A
  • Rds On (Max): Equal to or lower than 500 mOhm @ specified conditions
  • Vgs(th) (Max): Equal to or lower than 4V @ 250µA
  • Gate Charge (Qg) (Max): Equal to or lower than 5nC @ 10V
  • Input Capacitance (Ciss) (Max): Equal to or lower than 153pF @ 50V
  • Power - Max: Equal to or greater than 700mW
  • Operating Temperature Range: -55°C to 150°C (TJ) minimum

Compliance Criteria:

  • RoHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • Product Status: Active

The FDC8602 qualifies as a direct substitute based on superior or equivalent performance across all critical parameters while maintaining identical package specifications and compliance certifications.

Parameter Comparison

Parameter FDC3601N FDC8602 Unit
Manufacturer onsemi onsemi -
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs -
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) -
Drain to Source Voltage (Vdss) 100 100 V
Current - Continuous Drain (Id) @ 25°C 1 1.2 A
Rds On (Max) @ Id, Vgs 500 @ 1A, 10V 350 @ 1.2A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 5 @ 10V 2 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 153 @ 50V 70 @ 50V pF
Power - Max 700 690 mW
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 -
Supplier Device Package SuperSOT™-6 SuperSOT™-6 -
Series PowerTrench® PowerTrench® -
Product Status Active Active -
RoHS Status ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) -
REACH Status REACH Unaffected REACH Unaffected -

Engineering Selection Recommendations

FDC8602 as Primary Substitute:

The FDC8602 is a direct substitute for the FDC3601N based on the following engineering criteria:

  1. Electrical Compatibility: The FDC8602 maintains identical voltage ratings (100V Vdss) and threshold voltage specifications (4V @ 250µA), ensuring functional equivalence in circuit applications. The increased continuous drain current rating (1.2A versus 1A) provides enhanced current handling capability without circuit modification.

  2. Performance Enhancement: The FDC8602 demonstrates superior on-resistance characteristics (350 mOhm @ 1.2A, 10V versus 500 mOhm @ 1A, 10V), resulting in reduced power dissipation and improved thermal performance. Gate charge and input capacitance are both reduced, enabling faster switching operation.

  3. Mechanical Compatibility: Both devices utilize identical SuperSOT™-6 packaging (SOT-23-6 Thin, TSOT-23-6), ensuring direct pin-for-pin compatibility without PCB layout modifications.

  4. Compliance Alignment: Both parts maintain Active product status, RoHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected designation. Identical operating temperature ranges (-55°C to 150°C TJ) ensure thermal performance equivalence.

  5. Supply Chain Continuity: Both devices are manufactured by onsemi within the PowerTrench® series, ensuring consistent quality standards and long-term availability.

Frequently Asked Questions (FAQ)

Q: Can the FDC8602 be used as a direct replacement for the FDC3601N without circuit modifications?

A: Yes. The FDC8602 is pin-for-pin compatible in the SuperSOT™-6 package and maintains identical voltage and threshold specifications. No circuit modifications are required for direct substitution.

Q: What are the key performance differences between FDC3601N and FDC8602?

A: The FDC8602 provides higher continuous drain current (1.2A versus 1A), lower on-resistance (350 mOhm versus 500 mOhm), reduced gate charge (2nC versus 5nC), and lower input capacitance (70pF versus 153pF). These characteristics result in improved efficiency and faster switching performance.

Q: Are both parts suitable for the same operating temperature range?

A: Yes. Both the FDC3601N and FDC8602 operate across the identical temperature range of -55°C to 150°C (TJ), ensuring thermal performance equivalence in all environmental conditions.

Q: Do both parts meet the same compliance and regulatory requirements?

A: Yes. Both devices are RoHS3 compliant, REACH Unaffected, and maintain MSL Level 1 (Unlimited) moisture sensitivity rating. Both are Active products from onsemi, ensuring consistent quality and long-term support.

Q: What is the significance of the reduced gate charge in the FDC8602?

A: Lower gate charge (2nC versus 5nC) reduces the energy required to switch the device, enabling faster switching transitions and lower gate drive power consumption. This is particularly beneficial in high-frequency switching applications.

Q: Can the FDC8602 handle higher power dissipation than the FDC3601N?

A: The FDC8602 has a maximum power rating of 690mW compared to 700mW for the FDC3601N. However, the FDC8602's lower on-resistance results in reduced power dissipation at rated current, providing improved thermal performance in practical applications.

Q: Are there any package or pinout differences between these devices?

A: No. Both devices use the SuperSOT™-6 package (SOT-23-6 Thin, TSOT-23-6) with identical pinout and mechanical dimensions, ensuring direct PCB compatibility.

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