FDC021N30 Equivalent & Substitute Parts

Part Overview

The FDC021N30 is an N-Channel 30V MOSFET manufactured by onsemi, rated for 6.1A continuous drain current in a SuperSOT-6 surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and production continuity. The part operates across a temperature range of -55°C to 150°C (TJ) and dissipates up to 700mW, making it suitable for general-purpose switching applications in compact form factors.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	6.1	A (Ta)
On-State Resistance (Rds On Max) @ Id, Vgs	26	mOhm @ 6.1A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	3	V @ 250µA
Gate Charge (Qg Max) @ Vgs	10.8	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	710	pF @ 15V
Power Dissipation (Max)	700	mW (Ta)
Operating Temperature Range (TJ)	-55 to 150	°C
Package Type	SOT-23-6 Thin, TSOT-23-6	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the FDC021N30 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 30V
Continuous drain current (Id) must support the application requirement
On-state resistance (Rds On) characteristics must be compatible with switching performance
Gate threshold voltage (Vgs(th)) must fall within acceptable control voltage ranges
Gate charge (Qg) and input capacitance (Ciss) affect switching speed and driver requirements
Operating temperature range must encompass -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

Package type must be SOT-23-6 Thin or TSOT-23-6 (surface mount)
Mounting type must be surface mount
Pin configuration must be compatible with existing PCB layouts

Compliance Requirements:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) required
REACH Unaffected status required

The three substitute parts listed below meet these criteria with variations in current rating, power dissipation, and gate charge characteristics.

Parameter Comparison

Parameter	FDC021N30 (Main)	DMG6402LVT-7	RQ6E045BNTCR	RQ6E055BNTCR
Manufacturer	onsemi	Diodes Incorporated	Rohm Semiconductor	Rohm Semiconductor
Drain to Source Voltage (Vdss)	30V	30V	30V	30V
Continuous Drain Current (Id) @ 25°C	6.1A (Ta)	6A (Ta)	4.5A (Tj)	5.5A (Ta)
Rds On (Max) @ Id, Vgs	26mOhm @ 6.1A, 10V	30mOhm @ 7A, 10V	30mOhm @ 4.5A, 10V	25mOhm @ 5.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	3V @ 250µA	2V @ 250µA	2.5V @ 1mA	2.5V @ 1mA
Gate Charge (Qg Max) @ Vgs	10.8nC @ 10V	11.4nC @ 10V	8.4nC @ 10V	8.6nC @ 10V
Input Capacitance (Ciss Max) @ Vds	710pF @ 15V	498pF @ 15V	330pF @ 15V	355pF @ 15V
Power Dissipation (Max)	700mW (Ta)	1.75W (Ta)	1.25W (Ta)	1.25W (Ta)
Operating Temperature (TJ)	-55 to 150°C	-55 to 150°C	150°C	150°C
Package Type	SOT-23-6 Thin, TSOT-23-6	SOT-23-6 Thin, TSOT-23-6	SOT-23-6 Thin, TSOT-23-6	SOT-23-6 Thin, TSOT-23-6
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

DMG6402LVT-7 (Diodes Incorporated)

The DMG6402LVT-7 is an active product offering electrical specifications closely aligned with the FDC021N30. It provides 6A continuous drain current, matching the primary current requirement, with a maximum on-state resistance of 30mOhm at 10V gate voltage. The device supports the full 30V drain-source voltage rating and operates across the -55°C to 150°C temperature range. Power dissipation capability is increased to 1.75W, providing thermal margin. All compliance requirements are met: ROHS3 compliant, MSL 1, and REACH unaffected. This part is suitable for direct substitution in applications where the slightly higher Rds On and gate charge are acceptable.

RQ6E055BNTCR (Rohm Semiconductor)

The RQ6E055BNTCR is an active product rated for 5.5A continuous drain current with a maximum on-state resistance of 25mOhm at 10V gate voltage, providing superior switching efficiency compared to the main part. The device meets the 30V Vdss requirement and operates at 150°C maximum junction temperature. Gate charge is reduced to 8.6nC, enabling faster switching transitions. Power dissipation is rated at 1.25W. All compliance certifications are met: ROHS3 compliant, MSL 1, and REACH unaffected. This part is suitable for applications where current requirements do not exceed 5.5A and improved on-state resistance is beneficial.

RQ6E045BNTCR (Rohm Semiconductor)

The RQ6E045BNTCR is an active product rated for 4.5A continuous drain current with a maximum on-state resistance of 30mOhm at 10V gate voltage. The device meets the 30V Vdss requirement and operates at 150°C maximum junction temperature. Gate charge is minimized at 8.4nC, supporting high-frequency switching applications. Power dissipation is rated at 1.25W. All compliance certifications are met: ROHS3 compliant, MSL 1, and REACH unaffected. This part is suitable for applications where continuous drain current does not exceed 4.5A.

Frequently Asked Questions (FAQ)

Q: Can the DMG6402LVT-7 be used as a direct replacement for the FDC021N30?

A: The DMG6402LVT-7 is electrically compatible for applications requiring up to 6A continuous drain current at 30V. Both devices share the same package type (SOT-23-6 Thin, TSOT-23-6) and pin configuration. The primary difference is the on-state resistance specification (30mOhm versus 26mOhm), which may affect power dissipation in high-current switching scenarios. Compliance certifications are identical.

Q: What is the difference between the two Rohm Semiconductor options?

A: The RQ6E055BNTCR and RQ6E045BNTCR differ primarily in continuous drain current rating (5.5A versus 4.5A) and on-state resistance (25mOhm versus 30mOhm). Both devices share identical gate charge (8.4-8.6nC), input capacitance, and power dissipation specifications. Selection between these parts depends on the application's current requirement.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts are available in SOT-23-6 Thin and TSOT-23-6 packages, matching the mechanical footprint of the FDC021N30. However, packaging format availability differs: DMG6402LVT-7 is available in Cut Tape (CT) and Digi-Reel format, while RQ6E055BNTCR is available in Cut Tape (CT) and Digi-Reel format, and RQ6E045BNTCR is available in Tape & Reel (TR) format.

Q: What is the impact of lower gate charge on circuit design?

A: Lower gate charge (Qg) reduces the charge required to switch the device on and off, enabling faster switching transitions and reducing driver power consumption. The Rohm parts (8.4-8.6nC) have lower gate charge than the main part (10.8nC) and the Diodes part (11.4nC). This may allow use of lower-power gate drivers or higher switching frequencies.

Q: Are there temperature range differences between the substitute parts?

A: The FDC021N30 and DMG6402LVT-7 both specify operating temperature ranges of -55°C to 150°C (TJ). The Rohm parts (RQ6E055BNTCR and RQ6E045BNTCR) specify a maximum junction temperature of 150°C without explicit minimum temperature specification in the provided data. Applications requiring operation below -55°C should verify Rohm part specifications with the manufacturer.

Q: How do on-state resistance differences affect power dissipation?

A: On-state resistance (Rds On) directly determines conduction losses according to P = I²R. The FDC021N30 specifies 26mOhm at 6.1A, while substitutes range from 25mOhm to 30mOhm. At 6A operation, a 30mOhm device dissipates approximately 1.08W compared to 0.936W for a 26mOhm device. Applications with strict thermal budgets should account for these differences.

Q: Are all parts RoHS3 compliant?

A: Yes. All listed parts, including the main part and all substitutes, are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity and REACH unaffected status, meeting current environmental and regulatory requirements.

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