FDB8874 N-Channel MOSFET 30V 21A/121A TO-263AB Equivalent & Substitute Parts

Part Overview

The FDB8874 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 21A at Ta (ambient temperature) and 121A at Tc (case temperature). The device is housed in a Surface Mount TO-263 (D2PAK) package and features the PowerTrench® technology series. The FDB8874 is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

FDB8874
onsemiIn Stock: 1471FDB8874 Datasheet
FDB8874
Current Part
IRL3803STRLPBF
Infineon TechnologiesIn Stock: 6627IRL3803STRLPBF Datasheet
IRL3803STRLPBF
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PSMN017-30BL,118
Nexperia USA Inc.In Stock: 2850PSMN017-30BL,118 Datasheet
PSMN017-30BL,118
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PSMN4R3-30BL,118
Nexperia USA Inc.In Stock: 10797PSMN4R3-30BL,118 Datasheet
PSMN4R3-30BL,118
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STB80NF03L-04T4
STMicroelectronicsIn Stock: 18910STB80NF03L-04T4 Datasheet
STB80NF03L-04T4
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 21 A
Continuous Drain Current @ 25°C (Tc) 121 A
Power Dissipation (Max) 110 W
Rds On (Max) @ 40A, 10V 4.7 mOhm
Gate Charge (Qg) @ 10V 72 nC
Operating Temperature Range -55 to 175 °C
Mounting Type Surface Mount -
Package / Case TO-263-3, D2PAK (2 Leads + Tab) -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -

Substitute Part Grouping Explanation

Substitute parts for the FDB8874 are qualified based on the following electrical and mechanical criteria:

Mandatory Compatibility Parameters:

  • Drain to Source Voltage (Vdss): 30V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET (Metal Oxide) (exact match required)
  • Mounting Type: Surface Mount (exact match required)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB (exact match required)
  • Operating Temperature Range: -55°C to 175°C minimum (equal or exceeding range)

Performance Parameters for Substitution:

  • Continuous Drain Current (Tc): Equal to or greater than 121A
  • Power Dissipation (Max): Equal to or greater than 110W
  • Rds On (Max): Equal to or less than 4.7mOhm (lower resistance preferred for thermal performance)
  • Gate Charge (Qg): Comparable values acceptable within application switching frequency constraints

All substitute parts listed maintain identical voltage ratings, package geometry, and thermal operating ranges. Differences in current ratings, power dissipation, and on-resistance reflect manufacturing technology improvements and are acceptable for direct substitution in applications where the FDB8874 was originally specified.

Parameter Comparison

Parameter FDB8874 (onsemi) IRL3803STRLPBF (Infineon) STB80NF03L-04T4 (STMicroelectronics) PSMN4R3-30BL,118 (Nexperia) PSMN017-30BL,118 (Nexperia)
Drain to Source Voltage (Vdss) 30V 30V 30V 30V 30V
Continuous Drain Current (Tc) 121A 140A 80A 100A 32A
Power Dissipation (Max) Tc 110W 200W 300W 103W 47W
Rds On (Max) @ 10V 4.7mOhm @ 40A 6mOhm @ 71A 4mOhm @ 40A 4.1mOhm @ 15A 17mOhm @ 10A
Gate Charge (Qg) @ 10V 72nC 140nC @ 4.5V 110nC @ 4.5V 41.5nC 10.7nC
Operating Temperature Range -55 to 175°C -55 to 175°C -60 to 175°C -55 to 175°C -55 to 175°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

Engineering Selection Recommendations

Primary Substitute: PSMN4R3-30BL,118 (Nexperia USA Inc.)

The PSMN4R3-30BL,118 is the recommended primary substitute for the FDB8874. This device maintains all mandatory electrical and mechanical compatibility parameters while offering superior performance characteristics. The PSMN4R3-30BL,118 is classified as Active product status, ensuring long-term availability and manufacturing support. The device is RoHS3 Compliant and REACH Unaffected, meeting current regulatory requirements. Continuous drain current of 100A (Tc) and power dissipation of 103W (Tc) provide equivalent thermal performance to the FDB8874. The on-resistance of 4.1mOhm at 15A, 10V is superior to the FDB8874's 4.7mOhm specification, resulting in reduced power losses and improved thermal efficiency. Gate charge of 41.5nC is lower than the FDB8874, enabling faster switching transitions in high-frequency applications.

Secondary Substitute: STB80NF03L-04T4 (STMicroelectronics)

The STB80NF03L-04T4 qualifies as a secondary substitute with continuous drain current of 80A (Tc) and power dissipation of 300W (Tc). This device offers the lowest on-resistance at 4mOhm (40A, 10V) among all substitutes, providing superior thermal performance. The STB80NF03L-04T4 is classified as Obsolete, similar to the FDB8874, but maintains RoHS3 Compliance and REACH Unaffected status. Operating temperature range extends to -60°C minimum, exceeding the FDB8874 specification. This substitute is suitable for applications where thermal margin and on-resistance optimization are critical design factors.

Tertiary Substitute: IRL3803STRLPBF (Infineon Technologies)

The IRL3803STRLPBF provides the highest continuous drain current at 140A (Tc) and power dissipation at 200W (Tc). This device is classified as Not For New Designs, indicating limited future availability. The IRL3803STRLPBF is suitable for applications requiring maximum current handling capacity and thermal headroom. Gate charge of 140nC at 4.5V is elevated compared to the FDB8874, which may impact switching frequency performance in high-speed applications.

Not Recommended: PSMN017-30BL,118 (Nexperia USA Inc.)

The PSMN017-30BL,118 is listed as a substitute but is not recommended for direct replacement of the FDB8874. Continuous drain current of 32A (Tc) is significantly lower than the FDB8874's 121A rating, and power dissipation of 47W (Tc) is insufficient for equivalent thermal performance. On-resistance of 17mOhm at 10A, 10V is substantially higher, resulting in excessive power losses. This device is classified as Obsolete. The PSMN017-30BL,118 is suitable only for applications with reduced current requirements or as a downgrade in performance-limited designs.

Frequently Asked Questions (FAQ)

Q: Can the PSMN4R3-30BL,118 directly replace the FDB8874 without circuit modifications?

A: Yes. The PSMN4R3-30BL,118 maintains identical voltage ratings (30V Vdss), equivalent continuous drain current (100A Tc vs. 121A Tc), matching package geometry (TO-263-3, D2PAK), and identical operating temperature range (-55 to 175°C). No circuit modifications are required for direct substitution. The superior on-resistance (4.1mOhm vs. 4.7mOhm) and lower gate charge (41.5nC vs. 72nC) provide performance improvements.

Q: What is the significance of the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: The FDB8874 specifies 21A at Ta and 121A at Tc. The Ta rating reflects continuous current capability under ambient temperature conditions without active cooling. The Tc rating reflects continuous current capability when the device case temperature is maintained at 25°C through thermal management (heatsinking). Substitute parts must meet or exceed the Tc rating of 121A to ensure equivalent thermal performance in applications where the FDB8874 was originally specified.

Q: Why is the PSMN017-30BL,118 listed as a substitute if it has lower current rating?

A: The PSMN017-30BL,118 is listed in the original FDB8874 substitute documentation but does not meet the electrical performance requirements for direct replacement. This device is suitable only for applications with reduced current demands or as a downgrade option. For applications requiring the full 121A continuous drain current capability of the FDB8874, the PSMN017-30BL,118 is not appropriate.

Q: Are all substitute parts RoHS compliant?

A: The PSMN4R3-30BL,118, PSMN017-30BL,118, and STB80NF03L-04T4 are RoHS3 Compliant. The IRL3803STRLPBF status is not specified in the provided data. All substitute parts are REACH Unaffected. Verify RoHS compliance status with the component manufacturer or distributor for the IRL3803STRLPBF before procurement.

Q: What is the impact of gate charge differences on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The FDB8874 specifies 72nC at 10V. The PSMN4R3-30BL,118 has lower gate charge at 41.5nC, enabling faster switching transitions and reduced driver power dissipation. The IRL3803STRLPBF and STB80NF03L-04T4 have higher gate charge (140nC and 110nC respectively), which may require higher driver current or longer switching times. For high-frequency switching applications, lower gate charge is preferred.

Q: Can substitute parts be mixed in the same circuit board design?

A: All substitute parts share identical package geometry (TO-263-3, D2PAK) and pinout, allowing physical interchangeability on the same PCB layout. However, electrical performance differences (on-resistance, gate charge, current rating) may affect circuit behavior. Mixing different substitute parts in the same design is not recommended unless circuit analysis confirms that performance variations do not impact system operation.

Q: What is the product status significance for long-term sourcing?

A: The FDB8874 is Obsolete, indicating discontinued manufacturing. The PSMN4R3-30BL,118 is Active, ensuring long-term availability and manufacturing support. The STB80NF03L-04T4 and PSMN017-30BL,118 are Obsolete, and the IRL3803STRLPBF is Not For New Designs. For new designs or long-term production, the PSMN4R3-30BL,118 is the recommended choice due to Active status and guaranteed future availability.

Q: Are thermal management considerations different between the FDB8874 and substitute parts?

A: All substitute parts maintain the same operating temperature range (-55 to 175°C) and Surface Mount D2PAK package, ensuring identical thermal management requirements. The STB80NF03L-04T4 offers the highest power dissipation rating (300W Tc), providing maximum thermal margin. The PSMN4R3-30BL,118 offers superior on-resistance (4.1mOhm), reducing power dissipation and thermal load compared to the FDB8874. Thermal design calculations should be updated based on the selected substitute part's on-resistance and power dissipation specifications.

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