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FDB8860 Equivalent & Substitute Parts
Part Overview
The FDB8860 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage and 80A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as Obsolete, necessitating identification of equivalent substitute components for ongoing design support and procurement continuity. The FDB8860 belongs to the PowerTrench® series and is ROHS3 compliant with unlimited moisture sensitivity rating.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Manufacturer Part Number | FDB8860 | — |
| Manufacturer | onsemi | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Current - Continuous Drain (Id) @ 25°C | 80 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3 | mOhm @ 80A, 10V |
| Power Dissipation (Max) | 254 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab) | — |
| Product Status | Obsolete | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitute parts for the FDB8860 are identified based on the following critical electrical and mechanical parameters:
Substitution Criteria:
- FET Type: N-Channel MOSFET (Metal Oxide technology)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab) or equivalent
- Operating Temperature Range: -55°C to 175°C (TJ)
- Drain to Source Voltage (Vdss): Equal to or greater than 30V
- Continuous Drain Current (Id) @ 25°C: Equal to or greater than 80A (Tc)
- RoHS Compliance: ROHS3 Compliant
- Moisture Sensitivity Level: 1 (Unlimited)
The PHB66NQ03LT,118 is identified as a substitute part. However, this part exhibits reduced electrical performance in key parameters: Vdss of 25V (below the 30V requirement) and Id of 66A (below the 80A requirement). This part does not meet the minimum electrical specifications of the FDB8860 and therefore cannot serve as a direct substitute for applications requiring the full rated performance envelope.
Parameter Comparison
| Parameter | FDB8860 (onsemi) | PHB66NQ03LT,118 (Nexperia USA Inc.) | Unit |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 30 | 25 | V |
| Current - Continuous Drain (Id) @ 25°C | 80 | 66 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3 @ 80A, 10V | 10.5 @ 25A, 10V | mOhm |
| Power Dissipation (Max) | 254 | 93 | W (Tc) |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | — |
| Product Status | Obsolete | Obsolete | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
Engineering Selection Recommendations
Both the FDB8860 and PHB66NQ03LT,118 are classified as Obsolete products and are ROHS3 compliant with unlimited moisture sensitivity ratings. Both devices operate across the identical temperature range of -55°C to 175°C (TJ) and share the same D2PAK surface mount package configuration.
The PHB66NQ03LT,118 does not meet the electrical performance specifications required for direct substitution of the FDB8860. The substitute part is rated for 25V Vdss and 66A Id, both of which fall below the FDB8860 specifications of 30V Vdss and 80A Id. Additionally, the power dissipation capability of the PHB66NQ03LT,118 (93W) is significantly lower than the FDB8860 (254W).
For applications requiring the full electrical performance envelope of the FDB8860, alternative N-Channel MOSFETs with equivalent or superior ratings in Vdss, Id, and power dissipation must be evaluated. Component selection must be based on specific application requirements and thermal management considerations.
Frequently Asked Questions (FAQ)
Q: Can the PHB66NQ03LT,118 replace the FDB8860 in all applications?
A: No. The PHB66NQ03LT,118 has reduced electrical specifications: 25V Vdss versus 30V, and 66A Id versus 80A. It is suitable only for applications with lower voltage and current requirements than those specified for the FDB8860.
Q: Are both parts compatible in terms of package and mounting?
A: Yes. Both the FDB8860 and PHB66NQ03LT,118 use the TO-263-3 D2PAK surface mount package with 2 leads plus tab, ensuring mechanical and footprint compatibility.
Q: What is the significance of the Obsolete product status?
A: Both parts are classified as Obsolete, indicating they are no longer in active production. Procurement of these components may be limited to existing inventory. Design teams should evaluate current-generation alternatives for new designs.
Q: How do the on-resistance characteristics compare?
A: The FDB8860 exhibits 2.3 mOhm Rds On at 80A and 10V gate-source voltage. The PHB66NQ03LT,118 exhibits 10.5 mOhm Rds On at 25A and 10V gate-source voltage. The FDB8860 provides superior on-resistance performance at higher current levels.
Q: Are there compliance differences between the two parts?
A: No. Both parts are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with identical HTSUS codes. Both have unlimited moisture sensitivity (MSL 1).
Q: What thermal considerations apply to these devices?
A: The FDB8860 is rated for 254W maximum power dissipation, while the PHB66NQ03LT,118 is rated for 93W. Thermal management design must account for these differences in power handling capability.
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