FDB86366-F085 Equivalent & Substitute Parts

Part Overview

The FDB86366-F085 is an N-Channel 80V 110A MOSFET manufactured by onsemi in the PowerTrench® series. This device is housed in a TO-263 (D2PAK) surface mount package and is qualified to AEC-Q101 automotive standards. The part is classified as obsolete, necessitating identification of active equivalent components that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Substiute Parts

FDB86366-F085

onsemiIn Stock: 1821FDB86366-F085 Datasheet

Current PartRFQ

NVMFS6H801NLT1G

onsemiIn Stock: 812NVMFS6H801NLT1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDB86366-F085 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 80V
• Continuous Drain Current (Id) @ 25°C: Must support minimum 110A (Tc) rating
• Gate-Source Voltage (Vgs): Must accommodate ±20V maximum rating
• Operating Temperature Range: Must span -55°C to 175°C (TJ)
• Automotive Grade and AEC-Q101 qualification required

Mechanical Compatibility Criteria:

• Surface mount technology required
• Package footprint compatibility with TO-263 (D2PAK) or equivalent land pattern

The substitute part NVMFS6H801NLT1G meets these criteria with an 80V Vdss rating, 160A continuous drain current capability (Tc), and AEC-Q101 automotive qualification. Although packaged in 5-DFN (5x6) format rather than D2PAK, the electrical parameters satisfy the functional requirements of the obsolete FDB86366-F085.

Parameter Comparison

Engineering Selection Recommendations

The NVMFS6H801NLT1G serves as an active equivalent for the obsolete FDB86366-F085 based on the following factors:

Electrical Performance: Both devices operate at 80V Vdss with continuous drain current ratings that exceed the original 110A specification. The NVMFS6H801NLT1G provides 160A (Tc) capability, delivering superior current handling. On-resistance characteristics are comparable, with the substitute exhibiting lower Rds On (2.7mOhm vs. 3.6mOhm), resulting in reduced power dissipation and improved thermal efficiency.

Compliance and Certification: Both parts maintain automotive-grade qualification and AEC-Q101 certification, ensuring suitability for automotive applications. RoHS3 compliance and MSL 1 (Unlimited) ratings are identical, supporting equivalent supply chain and storage requirements.

Thermal Characteristics: Operating temperature ranges are identical (-55°C to 175°C TJ), and power dissipation ratings are within 5% of each other (167W vs. 176W), confirming thermal compatibility in equivalent circuit designs.

Package Consideration: The primary design change involves package transition from TO-263 (D2PAK) to 5-DFN (5x6). This requires PCB layout modification and thermal management reassessment. The 5-DFN package offers reduced footprint and improved thermal performance through direct die-to-pad coupling, but necessitates updated board design files and assembly procedures.

Frequently Asked Questions (FAQ)

Q: Can the NVMFS6H801NLT1G be used as a direct pin-for-pin replacement for the FDB86366-F085?

A: No. The FDB86366-F085 uses TO-263 (D2PAK) packaging with a specific pin configuration, while the NVMFS6H801NLT1G uses 5-DFN (5x6) packaging. Although electrically equivalent, PCB layout and land pattern modifications are required. Pin assignments and thermal pad locations differ between packages.

Q: What are the key electrical advantages of the NVMFS6H801NLT1G over the FDB86366-F085?

A: The substitute part provides 160A continuous drain current versus 110A, representing a 45% increase in current capacity. On-resistance is lower (2.7mOhm vs. 3.6mOhm at comparable conditions), reducing conduction losses. Gate charge is reduced (90nC vs. 112nC), improving switching speed and reducing drive circuit stress.

Q: Are both parts suitable for automotive applications?

A: Yes. Both the FDB86366-F085 and NVMFS6H801NLT1G carry automotive-grade designation and AEC-Q101 qualification, confirming suitability for automotive environments. Compliance with RoHS3 and REACH requirements is identical.

Q: What thermal management differences exist between the two packages?

A: The 5-DFN package in the NVMFS6H801NLT1G provides superior thermal performance through direct die-to-pad coupling compared to the TO-263 (D2PAK) package. Thermal resistance characteristics differ; the 5-DFN design typically exhibits lower junction-to-case thermal resistance, enabling more efficient heat dissipation in compact layouts.

Q: Is the NVMFS6H801NLT1G available in the same packaging options as the FDB86366-F085?

A: No. The FDB86366-F085 is supplied in Cut Tape (CT) and Digi-Reel® packaging, while the NVMFS6H801NLT1G is supplied in Tape & Reel (TR) format. Supply chain and component handling procedures differ accordingly.

Q: What is the impact of lower gate threshold voltage in the substitute part?

A: The NVMFS6H801NLT1G exhibits a lower gate threshold voltage (2V vs. 4V @ 250µA), enabling faster turn-on response and reduced gate drive requirements. This characteristic improves switching performance and reduces power consumption in gate drive circuits, provided the application's gate voltage levels remain within the ±20V maximum specification common to both devices.

Q: Can the substitute part handle the same power dissipation as the original?

A: Yes. Power dissipation ratings are comparable (167W Tc vs. 176W Tj), confirming equivalent thermal capacity. The lower on-resistance of the substitute part may result in reduced power dissipation under identical operating conditions, providing a thermal margin advantage.