FDB86360-F085 Equivalent & Substitute Parts

Part Overview

The FDB86360-F085 is an N-Channel 80V 110A MOSFET manufactured by onsemi in the PowerTrench® series, housed in a TO-263 (D2PAK) surface mount package. This device is classified as Obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. The part carries automotive-grade qualification (AEC-Q101) and is RoHS3 compliant, making substitute selection critical for applications requiring maintained compliance standards.

Substiute Parts

FDB86360-F085

onsemiIn Stock: 2089FDB86360-F085 Datasheet

Current PartRFQ

NVMTS1D5N08H

onsemiIn Stock: 2449NVMTS1D5N08H Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDB86360-F085 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must maintain the 80V Drain to Source Voltage (Vdss) specification to ensure safe operation within the same voltage domain.

Current Handling Capability: The substitute must support continuous drain current (Id) specifications sufficient for the application. The FDB86360-F085 specifies 110A at Tc; substitutes with equivalent or higher current ratings at comparable thermal conditions are acceptable.

On-State Resistance (Rds On): The substitute must maintain Rds On values within acceptable limits to preserve power dissipation characteristics and thermal performance. The FDB86360-F085 specifies 1.8mOhm maximum at 80A, 10V.

Gate Charge (Qg): The substitute must have gate charge specifications compatible with existing gate drive circuitry. The FDB86360-F085 specifies 253nC maximum at 10V.

Thermal Performance: The substitute must support equivalent power dissipation ratings to maintain thermal management in the application.

Automotive Qualification: The substitute must carry AEC-Q101 qualification to maintain compliance in automotive applications.

Package Compatibility: While the FDB86360-F085 uses TO-263 (D2PAK) packaging, substitutes in alternative surface mount packages are acceptable if board layout and thermal management can be accommodated.

Parameter Comparison

Engineering Selection Recommendations

The NVMTS1D5N08H is a direct functional substitute for the FDB86360-F085 based on the following criteria:

Voltage Rating Equivalence: Both devices maintain an 80V Drain to Source Voltage (Vdss) specification, ensuring compatibility within the same voltage domain.

Current Capability: The NVMTS1D5N08H provides 273A continuous drain current at Tc, exceeding the FDB86360-F085 specification of 110A at Tc. This provides margin for thermal and electrical performance.

On-State Resistance: The NVMTS1D5N08H specifies 1.4mOhm maximum at 90A, 10V, which is lower than the FDB86360-F085 specification of 1.8mOhm at 80A, 10V. This represents improved efficiency characteristics.

Gate Charge Reduction: The NVMTS1D5N08H specifies 125nC maximum gate charge at 10V, compared to 253nC for the FDB86360-F085. This reduction improves gate drive efficiency and switching performance.

Compliance Maintenance: Both devices carry AEC-Q101 automotive qualification, RoHS3 compliance, and REACH unaffected status, maintaining regulatory requirements for automotive applications.

Product Status: The NVMTS1D5N08H is classified as Active, ensuring long-term availability and supply continuity compared to the Obsolete status of the FDB86360-F085.

Package Consideration: The NVMTS1D5N08H uses an 8-DFNW (8.3x8.4) package instead of the TO-263 (D2PAK). Board layout and thermal management design must accommodate this package geometry change.

Frequently Asked Questions (FAQ)

Q: Can the NVMTS1D5N08H directly replace the FDB86360-F085 without circuit modifications?

A: The NVMTS1D5N08H is electrically compatible with the FDB86360-F085 across all critical parameters: 80V voltage rating, superior current handling, lower on-state resistance, and reduced gate charge. However, the package change from TO-263 (D2PAK) to 8-DFNW (8.3x8.4) requires board layout redesign and thermal management verification.

Q: What are the key electrical advantages of the NVMTS1D5N08H over the FDB86360-F085?

A: The NVMTS1D5N08H provides three measurable electrical improvements: (1) lower on-state resistance of 1.4mOhm versus 1.8mOhm, reducing conduction losses; (2) reduced gate charge of 125nC versus 253nC, improving gate drive efficiency; (3) higher continuous drain current of 273A at Tc versus 110A, providing thermal margin.

Q: Are both devices qualified for automotive applications?

A: Yes. Both the FDB86360-F085 and NVMTS1D5N08H carry AEC-Q101 automotive qualification, RoHS3 compliance, and REACH unaffected status, maintaining regulatory requirements for automotive use.

Q: What thermal considerations apply to the package change?

A: The FDB86360-F085 uses TO-263 (D2PAK) packaging with a tab for thermal dissipation. The NVMTS1D5N08H uses 8-DFNW (8.3x8.4) packaging. Thermal performance depends on PCB layout, copper area allocation, and thermal vias. Thermal analysis specific to the application circuit is required to verify equivalent or improved thermal performance.

Q: Is the NVMTS1D5N08H available in the same packaging as the FDB86360-F085?

A: No. The NVMTS1D5N08H is available only in 8-DFNW (8.3x8.4) surface mount packaging. The FDB86360-F085 uses TO-263 (D2PAK) packaging. Board redesign is necessary to accommodate this package geometry.

Q: What is the gate threshold voltage difference between these devices?

A: The FDB86360-F085 specifies a maximum gate threshold voltage of 4.5V at 250µA, while the NVMTS1D5N08H specifies 4.0V at 490µA. Both values fall within acceptable ranges for standard gate drive circuits operating at 10V drive voltage.

Q: Why is the FDB86360-F085 classified as Obsolete?

A: The FDB86360-F085 is listed as Obsolete by the manufacturer, indicating discontinued production and limited long-term availability. The NVMTS1D5N08H, classified as Active, ensures continued supply and support for new designs and production requirements.