FDB8441-F085 N-Channel MOSFET 40V 28A/80A TO-263 Equivalent & Substitute Parts

Part Overview

The FDB8441-F085 is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with continuous drain current of 28A at Ta and 80A at Tc. The device is housed in a TO-263 (D2PAK) surface mount package and is qualified to AEC-Q101 automotive standards. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current @ 25°C (Tc)	80	A
Continuous Drain Current @ 25°C (Ta)	28	A
RDS(on) Max @ 80A, 10V	2.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	280	nC
Input Capacitance (Ciss) @ 25V	15000	pF
Power Dissipation Max (Tc)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263 (D2PAK)	-
Mounting Type	Surface Mount	-
Automotive Grade	AEC-Q101	-

Substitute Part Grouping Explanation

Substitution of the FDB8441-F085 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must be 40V or greater
Continuous drain current (Tc) must meet or exceed 80A
RDS(on) characteristics must support the application's power dissipation requirements
Gate threshold voltage (Vgs(th)) must be compatible with 10V drive voltage
Operating temperature range must span -55°C to 175°C

Mechanical Compatibility Requirements:

Package must be TO-263 (D2PAK) or equivalent surface mount form factor
Mounting type must be surface mount
Pin configuration must be compatible with existing PCB layouts

Compliance Requirements:

Automotive-grade qualification (AEC-Q101) preferred for direct replacement in automotive applications
RoHS3 compliance required for new designs
REACH compliance status must be unaffected

Substitute parts are grouped into three categories: direct manufacturer equivalents (same package, same electrical performance), similar performance alternatives (same package, enhanced or comparable electrical performance), and functional alternatives (different package, enhanced electrical performance).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	RDS(on) Max (mOhm)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Package	Status	AEC-Q101
FDB8441-F085	onsemi	40	80	2.5 @ 80A	280	15000	TO-263	Obsolete	Yes
STB170NF04	STMicroelectronics	40	80	5.0 @ 40A	170	9000	TO-263	Active	No
AUIRF2804STRL	Infineon Technologies	40	195	2.0 @ 75A	240	6450	D2PAK	Active	No
BUK661R9-40C,118	Nexperia USA Inc.	40	120	1.9 @ 25A	260	15100	D2PAK	Obsolete	Yes
IPB120N04S401ATMA1	Infineon Technologies	40	120	1.5 @ 100A	176	14000	TO-263	Active	No
IPB120N04S402ATMA1	Infineon Technologies	40	120	1.8 @ 100A	134	10740	TO-263	Active	No
IPB90N04S402ATMA1	Infineon Technologies	40	90	2.1 @ 90A	118	9430	TO-263	Active	No
IXTA300N04T2	IXYS	40	300	2.5 @ 500mA	145	10700	TO-263	Active	No
NP109N04PUG-E1-AY	Renesas Electronics Corporation	40	110	2.3 @ 55A	270	15750	TO-263	Active	No
NP110N04PUG-E1-AY	Renesas Electronics Corporation	40	110	1.8 @ 55A	390	25700	TO-263	Active	No
NVMYS1D7N04CT1G	onsemi	40	190	1.7 @ 50A	50	3125	LFPAK4	Active	No

Engineering Selection Recommendations

Direct Package Replacement (TO-263/D2PAK):

STB170NF04 (STMicroelectronics) provides the most direct mechanical and electrical compatibility. It maintains the same 40V/80A rating and TO-263 package footprint. The part is currently in active production status with high inventory availability (26,220 units). However, this part does not carry AEC-Q101 automotive qualification, which may be a consideration for automotive applications.

Enhanced Performance Alternatives (TO-263/D2PAK):

IPB120N04S401ATMA1 and IPB120N04S402ATMA1 (Infineon Technologies) offer superior electrical performance with lower RDS(on) values (1.5 mOhm and 1.8 mOhm respectively) and higher continuous drain current (120A). Both parts are in active production with substantial inventory. These devices are suitable for applications requiring improved efficiency and thermal performance. Both maintain TO-263 package compatibility.

IPB90N04S402ATMA1 (Infineon Technologies) provides a mid-range option with 90A continuous drain current, lower gate charge (118 nC), and reduced input capacitance (9,430 pF). This part is appropriate for applications where the 80A rating of the original part is sufficient and where reduced switching losses are beneficial.

High-Current Alternative (TO-263/D2PAK):

IXTA300N04T2 (IXYS) supports 300A continuous drain current with the same 40V rating and TO-263 package. This part is suitable for applications requiring significant current headroom or future design scaling. The part is in active production with lower inventory (858 units).

Alternative Package Option (LFPAK4):

NVMYS1D7N04CT1G (onsemi) is the manufacturer-recommended equivalent from onsemi. This part offers superior electrical performance with 190A continuous drain current, 1.7 mOhm RDS(on), and significantly reduced gate charge (50 nC). However, the LFPAK4 (5x6) package differs from the TO-263 footprint and requires PCB layout modification.

Renesas Electronics Options:

NP109N04PUG-E1-AY and NP110N04PUG-E1-AY (Renesas Electronics Corporation) maintain TO-263 package compatibility with 110A continuous drain current. Both parts are in active production. NP110N04PUG-E1-AY offers lower RDS(on) (1.8 mOhm) but exhibits higher gate charge (390 nC) and input capacitance (25,700 pF).

Obsolete Part Consideration:

BUK661R9-40C,118 (Nexperia USA Inc.) is listed as obsolete but carries AEC-Q101 automotive qualification. This part should not be selected for new designs due to its obsolete status, despite its automotive-grade certification.

Frequently Asked Questions (FAQ)

Q: Can I use STB170NF04 as a direct replacement for FDB8441-F085?

A: STB170NF04 provides mechanical and electrical compatibility with identical 40V/80A ratings and TO-263 package. However, it lacks AEC-Q101 automotive qualification. For non-automotive applications or where automotive qualification is not required, this part is suitable. For automotive applications requiring AEC-Q101 certification, alternative parts must be evaluated against specific application requirements.

Q: What is the difference between IPB120N04S401ATMA1 and IPB120N04S402ATMA1?

A: Both parts share the same 40V/120A electrical ratings and TO-263 package. IPB120N04S401ATMA1 has lower RDS(on) (1.5 mOhm @ 100A) and higher power dissipation capability (188W), while IPB120N04S402ATMA1 has slightly higher RDS(on) (1.8 mOhm @ 100A) and lower power dissipation (158W). Selection depends on thermal management requirements and efficiency targets.

Q: Why would I choose IPB90N04S402ATMA1 over the 120A alternatives?

A: IPB90N04S402ATMA1 is appropriate when the application's maximum current requirement is 90A or less. This part offers reduced gate charge (118 nC versus 176-280 nC in higher-current alternatives) and lower input capacitance (9,430 pF), resulting in faster switching characteristics and reduced switching losses. This selection reduces component cost and thermal management complexity for current-limited applications.

Q: Is NVMYS1D7N04CT1G a suitable replacement despite the different package?

A: NVMYS1D7N04CT1G is the onsemi manufacturer-recommended equivalent and offers superior electrical performance (190A, 1.7 mOhm RDS(on), 50 nC gate charge). However, the LFPAK4 (5x6) package differs from TO-263, requiring PCB redesign. This part is suitable only when PCB layout modification is feasible and the enhanced performance justifies the design change.

Q: What are the key electrical parameters that determine substitution compatibility?

A: The critical parameters are: (1) Drain-to-Source Voltage (Vdss) must be 40V or greater, (2) Continuous drain current (Tc) must meet or exceed 80A, (3) RDS(on) must be compatible with the application's power dissipation budget, (4) Gate threshold voltage must support 10V drive voltage, and (5) Operating temperature range must span -55°C to 175°C. Package type (TO-263/D2PAK) and mounting method (surface mount) must also be maintained for direct PCB compatibility.

Q: Are there any compliance differences between substitute parts?

A: The original FDB8441-F085 carries AEC-Q101 automotive qualification. Most substitute parts listed are RoHS3 compliant and REACH unaffected. However, only BUK661R9-40C,118 among the active alternatives carries AEC-Q101 qualification, though this part is obsolete. For automotive applications requiring AEC-Q101 certification, application-specific evaluation is necessary, as most active alternatives do not carry this qualification.

Q: What is the advantage of IXTA300N04T2 with its 300A rating?

A: IXTA300N04T2 provides significant current headroom (300A versus 80A) while maintaining the same 40V rating and TO-263 package. This part is suitable for applications requiring future current scaling, parallel device configurations, or where thermal margin is critical. The higher current capability allows for lower RDS(on) per ampere and improved thermal performance in high-current applications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. Lower gate charge (NVMYS1D7N04CT1G at 50 nC, IXTA300N04T2 at 145 nC) results in faster switching, reduced switching losses, and lower driver power requirements. Higher gate charge (NP110N04PUG-E1-AY at 390 nC) requires more driver energy but may provide improved noise immunity. Selection depends on the gate driver circuit capability and switching frequency requirements.

Q: Can I use parts with lower RDS(on) values without circuit modification?

A: Parts with lower RDS(on) values (such as IPB120N04S401ATMA1 at 1.5 mOhm) are generally compatible with existing circuits designed for the FDB8441-F085 (2.5 mOhm). Lower RDS(on) reduces power dissipation and heat generation, improving efficiency. No circuit modification is required; however, thermal management may be simplified due to reduced heat output. Verify that the gate driver can supply the required gate charge within the specified timing constraints.

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