FDB8030L N-Channel 30V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The FDB8030L is an N-Channel 30V 80A MOSFET manufactured by onsemi in the PowerTrench® series, housed in a TO-263 (D2PAK) surface mount package. This device is classified as obsolete, indicating that direct procurement from the original manufacturer may be limited or unavailable. The part delivers 187W maximum power dissipation at the case temperature and operates across a temperature range of -65°C to 175°C. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	FDB8030L Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	80	A (Ta)
Rds On (Max) @ Id, Vgs	3.5	mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs	170	nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	10500	pF @ 15V
Power Dissipation (Max)	187	W (Tc)
Operating Temperature Range	-65 to 175	°C (TJ)
Package Type	TO-263-3 (D2PAK)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FDB8030L is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must be ≥30V to maintain voltage margin
Continuous Drain Current (Id): Must be ≥80A to support rated current
Package Type: Must be TO-263-3 (D2PAK) or compatible surface mount package
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation (Max): Higher values provide thermal margin
Operating Temperature Range: Must encompass or exceed -65°C to 175°C

Substitute parts are grouped into two categories: Direct Equivalents (matching Vdss and Id specifications) and Enhanced Alternatives (higher current or voltage ratings that maintain backward compatibility).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
FDB8030L	onsemi	30	80	3.5 @ 80A, 10V	170 @ 5V	10500 @ 15V	187	TO-263-3 (D2PAK)	Obsolete
IPB80N04S204ATMA2	Infineon Technologies	40	80	3.4 @ 80A, 10V	170 @ 10V	5300 @ 25V	300	TO-263-3 (D2PAK)	Active
STB80NF03L-04T4	STMicroelectronics	30	80	4 @ 40A, 10V	110 @ 4.5V	5500 @ 25V	300	TO-263-3 (D2PAK)	Obsolete
PSMN3R4-30BL,118	NXP USA Inc.	30	100	3.3 @ 25A, 10V	64 @ 10V	3907 @ 15V	114	TO-263-3 (D2PAK)	Active
PSMN4R3-30BL,118	Nexperia USA Inc.	30	100	4.1 @ 15A, 10V	41.5 @ 10V	2400 @ 15V	103	TO-263-3 (D2PAK)	Active
PSMNR90-30BL,118	Nexperia USA Inc.	30	120	1 @ 25A, 10V	243 @ 10V	14850 @ 15V	306	TO-263-3 (D2PAK)	Active
STB80NF10T4	STMicroelectronics	100	80	15 @ 40A, 10V	182 @ 10V	5500 @ 25V	300	TO-263-3 (D2PAK)	Active
STD155N3LH6	STMicroelectronics	30	80	3 @ 40A, 10V	80 @ 5V	3800 @ 25V	110	TO-252 (DPAK)	Active
PHB66NQ03LT,118	Nexperia USA Inc.	25	66	10.5 @ 25A, 10V	12 @ 5V	860 @ 25V	93	TO-263-3 (D2PAK)	Obsolete

Engineering Selection Recommendations

Direct Equivalent Substitutes (Same Vdss and Id):

The STB80NF03L-04T4 from STMicroelectronics is a direct electrical equivalent with matching 30V/80A specifications and TO-263-3 package compatibility. However, this part is classified as obsolete, limiting its suitability for long-term supply chain requirements. The IPB80N04S204ATMA2 from Infineon Technologies provides superior specifications with 40V Vdss rating, lower Rds On (3.4 mOhm), and higher power dissipation (300W), while maintaining active product status and full compliance with ROHS3 and REACH requirements.

Enhanced Current Rating Alternatives (30V, >80A):

The PSMN3R4-30BL,118 and PSMN4R3-30BL,118 from NXP/Nexperia USA Inc. both deliver 100A continuous drain current at 30V, providing 25% current margin over the FDB8030L. Both parts maintain TO-263-3 package compatibility and active product status. The PSMN3R4-30BL,118 exhibits superior Rds On performance (3.3 mOhm @ 25A, 10V) and lower gate charge (64 nC), while the PSMN4R3-30BL,118 offers reduced input capacitance (2400 pF) for faster switching characteristics.

The PSMNR90-30BL,118 from Nexperia USA Inc. extends current capability to 120A at 30V with exceptional Rds On performance (1 mOhm @ 25A, 10V) and significantly higher power dissipation (306W). This part is suitable for applications requiring enhanced thermal performance and current headroom.

Higher Voltage Alternative (100V, 80A):

The STB80NF10T4 from STMicroelectronics maintains 80A current rating while increasing Vdss to 100V. This part is appropriate for applications requiring higher voltage margin but should be selected only when circuit design permits the higher voltage specification. Active product status and full compliance certifications support long-term availability.

Package Variant (TO-252 DPAK):

The STD155N3LH6 from STMicroelectronics provides 30V/80A specifications in a TO-252 (DPAK) package instead of TO-263 (D2PAK). This part is suitable only for designs where DPAK footprint compatibility exists. Active product status and superior Rds On performance (3 mOhm @ 40A, 10V) support this selection.

Compliance and Availability:

All recommended active substitutes comply with ROHS3 and REACH requirements. Obsolete parts (FDB8030L, STB80NF03L-04T4, PHB66NQ03LT,118) should be avoided for new designs or long-term production commitments. Active parts from Infineon Technologies, STMicroelectronics, and Nexperia USA Inc. provide assured supply chain continuity and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IPB80N04S204ATMA2 directly replace the FDB8030L in all applications?

A: The IPB80N04S204ATMA2 is electrically compatible with the FDB8030L for applications operating at or below 30V. The higher 40V Vdss rating provides additional voltage margin without affecting performance in 30V circuits. Both parts share identical 80A continuous drain current and TO-263-3 package specifications. The IPB80N04S204ATMA2 offers improved Rds On (3.4 mOhm vs. 3.5 mOhm) and significantly higher power dissipation (300W vs. 187W), making it suitable for direct substitution with potential thermal performance improvement.

Q: What is the difference between the PSMN3R4-30BL,118 and PSMN4R3-30BL,118?

A: Both parts maintain 30V/100A specifications and TO-263-3 package compatibility. The PSMN3R4-30BL,118 exhibits superior Rds On performance (3.3 mOhm @ 25A, 10V) and higher gate charge (64 nC @ 10V), resulting in lower on-state losses but higher switching losses. The PSMN4R3-30BL,118 features lower input capacitance (2400 pF vs. 3907 pF) and reduced gate charge (41.5 nC @ 10V), providing faster switching characteristics and lower switching losses. Selection depends on whether the application prioritizes conduction loss reduction or switching speed optimization.

Q: Why is the STD155N3LH6 in a different package (TO-252 DPAK) than the FDB8030L (TO-263 D2PAK)?

A: The STD155N3LH6 is offered in TO-252 (DPAK) package, which is a different physical form factor from the TO-263 (D2PAK) package used by the FDB8030L. While both are surface mount packages with similar thermal and electrical characteristics, they have different PCB footprints and pin configurations. The STD155N3LH6 is suitable only for designs where DPAK footprint compatibility exists or where a redesign to accommodate the different package is acceptable.

Q: Can the STB80NF10T4 (100V) be used in place of the FDB8030L (30V)?

A: The STB80NF10T4 is electrically compatible with the FDB8030L in applications operating at or below 30V. The higher 100V Vdss rating provides substantial voltage margin for circuits designed for 30V operation. However, the STB80NF10T4 exhibits higher Rds On (15 mOhm @ 40A, 10V vs. 3.5 mOhm @ 80A, 10V), resulting in increased conduction losses. This part should be selected only when circuit design requires the higher voltage capability or when the increased on-state resistance is acceptable for the application.

Q: What is the significance of the "Active" versus "Obsolete" product status?

A: Active product status indicates that the manufacturer continues to produce and support the part, ensuring long-term availability, consistent quality, and ongoing technical support. Obsolete parts are no longer manufactured and may have limited remaining inventory. For new designs or production commitments extending beyond 2-3 years, active parts are strongly preferred to avoid supply chain disruption and ensure access to replacement inventory.

Q: Are all substitute parts ROHS3 and REACH compliant?

A: All substitute parts listed in this reference are ROHS3 compliant and REACH unaffected, matching the compliance status of the FDB8030L. This ensures regulatory compatibility for applications subject to environmental and hazardous substance restrictions in the European Union and other regulated markets.

Q: What thermal considerations apply when selecting a substitute part?

A: Power dissipation (Pd Max) varies significantly among substitute parts, ranging from 103W (PSMN4R3-30BL,118) to 306W (PSMNR90-30BL,118). The FDB8030L is rated at 187W. Applications with tight thermal constraints should prioritize parts with higher power dissipation ratings or lower Rds On values to minimize heat generation. Conversely, applications with adequate thermal management may select parts with lower power ratings without performance degradation.

Q: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and allow faster switching transitions, beneficial for high-frequency applications. The FDB8030L specifies 170 nC @ 5V. Substitute parts range from 12 nC (PHB66NQ03LT,118) to 243 nC (PSMNR90-30BL,118). Applications prioritizing switching efficiency should select parts with lower gate charge values.

Q: What role does input capacitance (Ciss) play in MOSFET selection?

A: Input capacitance affects the gate drive circuit requirements and switching speed. Higher Ciss values require more gate charge and increase switching losses. The FDB8030L specifies 10500 pF @ 15V, which is relatively high. Substitute parts with lower Ciss values (such as PSMN4R3-30BL,118 at 2400 pF @ 15V) provide improved switching performance and reduced gate drive power requirements, beneficial for high-frequency switching applications.

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