FDB7030L N-Channel 30V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The FDB7030L is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage and 80A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.

The FDB7030L belongs to the PowerTrench® series and is designed for applications requiring moderate voltage switching with high current handling capability. Due to its obsolete status, alternative components with compatible electrical and mechanical specifications are required for new designs or production replacements.

Substiute Parts

FDB7030L

onsemiIn Stock: 2465FDB7030L Datasheet

Current PartRFQ

PSMN017-30BL,118

Nexperia USA Inc.In Stock: 2850PSMN017-30BL,118 Datasheet

SimilarRFQ

PSMN4R3-30BL,118

Nexperia USA Inc.In Stock: 10797PSMN4R3-30BL,118 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDB7030L is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal 30V
• Package Type: Must be TO-263-3 or D2PAK (surface mount, 2 leads + tab)
• FET Type: Must be N-Channel MOSFET
• Mounting Type: Must be surface mount
• Gate Voltage Range (Vgs Max): Must accommodate ±20V

Performance Parameters for Substitution Compatibility:

• Continuous Drain Current (Id): Substitute must meet or exceed 80A rating
• On-State Resistance (Rds On): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values improve switching speed
• Power Dissipation: Higher ratings provide thermal margin
• Operating Temperature Range: Must encompass -65°C to 175°C or equivalent

The substitute parts identified (PSMN4R3-30BL,118 and PSMN017-30BL,118) share the same voltage rating, package configuration, and N-Channel technology. Selection between substitutes depends on current rating requirements and thermal design constraints.

Parameter Comparison

Engineering Selection Recommendations

PSMN4R3-30BL,118 (Primary Substitute)

The PSMN4R3-30BL,118 is the preferred substitute for the FDB7030L. This device exceeds the current rating requirement with 100A continuous drain current versus the original 80A specification. The lower on-state resistance (4.1 mOhm @ 15A, 10V) provides improved efficiency and reduced power dissipation in switching applications. The PSMN4R3-30BL,118 maintains identical voltage rating (30V Vdss) and package configuration (D2PAK/TO-263-3). The device is currently in active production status, ensuring long-term availability and supply chain stability. ROHS3 compliance provides regulatory alignment for new designs. The higher power dissipation rating (103W) offers thermal margin for demanding applications.

PSMN017-30BL,118 (Secondary Substitute)

The PSMN017-30BL,118 is a lower-current alternative suitable for applications where the 80A rating of the FDB7030L exceeds actual requirements. This device is rated for 32A continuous drain current and features significantly lower gate charge (10.7 nC @ 10V) and input capacitance (552 pF @ 15V), resulting in faster switching characteristics and reduced gate drive power. The higher on-state resistance (17 mOhm @ 10A, 10V) indicates higher conduction losses compared to the main part. This substitute is appropriate for lower-current designs or where switching speed is prioritized over conduction efficiency. The device is classified as obsolete, limiting its suitability for new long-term production programs.

Compliance and Regulatory Considerations

Both substitute parts maintain REACH Unaffected status and MSL Level 1 (Unlimited) moisture sensitivity, matching the environmental compliance profile of the FDB7030L. The PSMN4R3-30BL,118 provides additional ROHS3 compliance certification, supporting regulatory requirements for new product development. All three devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Frequently Asked Questions (FAQ)

Q: Can the PSMN4R3-30BL,118 directly replace the FDB7030L in existing designs?

A: Yes. Both devices share identical voltage rating (30V Vdss), package type (D2PAK/TO-263-3), and N-Channel MOSFET technology. The PSMN4R3-30BL,118 exceeds the current rating (100A vs. 80A) and provides lower on-state resistance, making it a direct electrical and mechanical substitute. No PCB layout modifications are required.

Q: What is the difference between the two substitute parts?

A: The PSMN4R3-30BL,118 is rated for 100A continuous drain current with 4.1 mOhm on-state resistance, optimized for high-current applications. The PSMN017-30BL,118 is rated for 32A with 17 mOhm on-state resistance and lower gate charge, optimized for lower-current or faster-switching applications. Selection depends on actual circuit current requirements and thermal design constraints.

Q: Are there package compatibility concerns?

A: No. All three devices use the TO-263-3 (D2PAK) surface mount package with identical pinout: two leads plus tab. PCB footprints and thermal management approaches are directly compatible.

Q: What is the significance of the "Active" versus "Obsolete" product status?

A: The PSMN4R3-30BL,118 is in active production, ensuring long-term availability and supply chain continuity for new designs. The FDB7030L and PSMN017-30BL,118 are obsolete, indicating discontinued manufacturing and limited future availability. For new product development, the active PSMN4R3-30BL,118 is the recommended choice.

Q: How do the operating temperature ranges compare?

A: The FDB7030L operates from -65°C to 175°C (TJ). Both Nexperia substitutes operate from -55°C to 175°C (TJ). The FDB7030L provides 10°C additional low-temperature capability. For applications requiring operation below -55°C, the FDB7030L specification must be maintained or alternative parts evaluated.

Q: What are the gate charge implications for circuit design?

A: The FDB7030L has 33 nC gate charge @ 5V. The PSMN4R3-30BL,118 has 41.5 nC @ 10V, requiring slightly higher gate drive energy. The PSMN017-30BL,118 has 10.7 nC @ 10V, requiring significantly lower gate drive power. Gate driver selection and timing must accommodate these differences.

Q: Are there thermal design considerations when substituting?

A: Yes. The FDB7030L is rated for 68W power dissipation (Tc). The PSMN4R3-30BL,118 is rated for 103W, providing greater thermal margin. The PSMN017-30BL,118 is rated for 47W, requiring more careful thermal management. Thermal design must account for actual operating current, switching frequency, and on-state resistance to ensure junction temperature remains within limits.

Q: Do the substitute parts meet the same regulatory and compliance standards?

A: All three devices are REACH Unaffected and MSL Level 1 (Unlimited). The PSMN4R3-30BL,118 additionally carries ROHS3 compliance certification. For new designs subject to RoHS requirements, the PSMN4R3-30BL,118 is the appropriate selection.