FDB6690S N-Channel MOSFET 30V 42A Equivalent & Substitute Parts

Part Overview

The FDB6690S is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 42A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design support and procurement requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling capability, and thermal performance while conforming to the same physical package specification.

Substiute Parts

FDB6690S

onsemiIn Stock: 18718FDB6690S Datasheet

Current PartRFQ

PSMN017-30BL,118

Nexperia USA Inc.In Stock: 2850PSMN017-30BL,118 Datasheet

SimilarRFQ

PSMN4R3-30BL,118

Nexperia USA Inc.In Stock: 10797PSMN4R3-30BL,118 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDB6690S are qualified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30 V
• FET Type: N-Channel configuration required
• Package Type: TO-263-3 / D2PAK physical compatibility mandatory
• Mounting Type: Surface Mount required
• Gate Voltage Rating (Vgs Max): ±20 V compatibility
• Operating Temperature Range: Must support minimum -55°C to 150°C envelope

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Substitute must support minimum 42 A at rated conditions
• RDS(on) characteristics: Lower on-resistance values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Affects gate drive requirements
• Power Dissipation capability: Must support thermal requirements of application

The substitute parts identified below satisfy all primary criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

PSMN4R3-30BL,118 (Nexperia USA Inc.): This substitute provides superior electrical performance with 100A continuous drain current capability, significantly exceeding the FDB6690S 42A rating. The PSMN4R3-30BL,118 features lower on-resistance (4.1 mOhm vs. 15.5 mOhm), enabling reduced power dissipation in high-current applications. The device maintains identical 30V Vdss rating and TO-263 D2PAK package compatibility. Product status is Active, ensuring long-term availability and supply chain stability. RoHS3 compliance and REACH Unaffected status satisfy modern regulatory requirements. Extended operating temperature range (-55°C to 175°C) provides additional thermal margin. This part is suitable for direct substitution where current capacity and thermal performance improvements are acceptable.

PSMN017-30BL,118 (Nexperia USA Inc.): This substitute provides equivalent voltage rating (30V Vdss) and maintains TO-263 D2PAK package compatibility. Continuous drain current is rated at 32A (Tc), which is lower than the FDB6690S 42A specification. On-resistance is comparable (17 mOhm vs. 15.5 mOhm). Gate charge is reduced (10.7 nC vs. 15 nC), offering improved switching characteristics. Input capacitance is significantly lower (552 pF vs. 1238 pF), reducing gate drive requirements. Product status is Obsolete, limiting long-term procurement viability. RoHS3 compliance and extended operating temperature range (-55°C to 175°C) are provided. This part is suitable for applications where current requirements do not exceed 32A and obsolescence risk is acceptable.

Frequently Asked Questions (FAQ)

Q: Can PSMN4R3-30BL,118 directly replace FDB6690S in all applications?

A: PSMN4R3-30BL,118 maintains identical voltage rating (30V Vdss), package type (TO-263 D2PAK), and mounting configuration. The higher current rating (100A vs. 42A) and lower on-resistance (4.1 mOhm vs. 15.5 mOhm) represent performance improvements. Direct substitution is electrically valid. Gate charge is higher (41.5 nC vs. 15 nC), requiring verification that gate drive circuitry can supply the increased charge without exceeding maximum gate voltage (±20V). Input capacitance is higher (2400 pF vs. 1238 pF), which may affect switching speed in high-frequency applications.

Q: Is PSMN017-30BL,118 suitable as a substitute when current requirements are below 32A?

A: PSMN017-30BL,118 maintains 30V Vdss rating and TO-263 D2PAK package compatibility. For applications requiring less than 32A continuous drain current, this part satisfies electrical requirements. Lower gate charge (10.7 nC vs. 15 nC) and input capacitance (552 pF vs. 1238 pF) may improve switching performance. However, product status is Obsolete, presenting long-term supply chain risk. PSMN4R3-30BL,118 is recommended as the primary substitute due to Active product status.

Q: What are the package compatibility requirements for substitution?

A: All substitute parts must use TO-263-3 / D2PAK (2 Leads + Tab) package configuration to ensure mechanical and electrical compatibility with existing PCB layouts. This package type is identical across FDB6690S, PSMN017-30BL,118, and PSMN4R3-30BL,118. Surface mount mounting type is consistent across all parts. No package adapter or PCB redesign is required.

Q: How do gate charge differences affect circuit design?

A: FDB6690S specifies 15 nC gate charge at 5V. PSMN017-30BL,118 specifies 10.7 nC at 10V, and PSMN4R3-30BL,118 specifies 41.5 nC at 10V. Gate charge determines the total charge that must be supplied by the gate drive circuit to switch the device. Higher gate charge (PSMN4R3-30BL,118) requires greater charge delivery capability from the driver. Lower gate charge (PSMN017-30BL,118) reduces driver requirements. Gate voltage rating (±20V maximum) must not be exceeded in either case. Existing gate drive circuits must be evaluated for compatibility with the selected substitute.

Q: What is the significance of RDS(on) differences between parts?

A: RDS(on) is the on-state drain-to-source resistance, directly affecting power dissipation and heat generation. FDB6690S specifies 15.5 mOhm at 21A, 10V. PSMN017-30BL,118 specifies 17 mOhm at 10A, 10V. PSMN4R3-30BL,118 specifies 4.1 mOhm at 15A, 10V. Lower on-resistance reduces I²R losses, improving efficiency and reducing thermal load. PSMN4R3-30BL,118 provides significant on-resistance improvement, enabling higher current handling with lower heat generation. Applications with strict thermal budgets benefit from lower on-resistance values.

Q: Are there regulatory compliance differences between substitute parts?

A: FDB6690S regulatory status is not fully specified in available data. PSMN017-30BL,118 and PSMN4R3-30BL,118 are both RoHS3 Compliant and REACH Unaffected. All three parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Moisture Sensitivity Level is 1 (Unlimited) for all parts. For applications requiring RoHS3 compliance, PSMN4R3-30BL,118 or PSMN017-30BL,118 are required. PSMN4R3-30BL,118 is recommended due to Active product status.

Q: What is the impact of operating temperature range differences?

A: FDB6690S operates from -55°C to 150°C (TJ). PSMN017-30BL,118 and PSMN4R3-30BL,118 both operate from -55°C to 175°C (TJ). The extended upper temperature limit (175°C vs. 150°C) provides additional thermal margin in high-temperature environments. For applications operating near 150°C, the substitute parts offer 25°C additional headroom before reaching maximum junction temperature. This extended range does not affect applications operating within the original -55°C to 150°C envelope.