FDB6670AS N-Channel MOSFET 30V 62A Equivalent & Substitute Parts

Part Overview

The FDB6670AS is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 62A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design support and procurement requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating the same or compatible package configurations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	62	A
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 31A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	3	V @ 1mA
Gate Charge (Qg) @ Vgs	39	nC @ 15V
Input Capacitance (Ciss) @ Vds	1570	pF @ 15V
Power Dissipation (Max)	62.5	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitute parts for the FDB6670AS are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Mandatory Compatibility Parameters:

Drain to Source Voltage (Vdss): 30V minimum
Package Type: TO-263 (D2PAK) Surface Mount configuration
FET Type: N-Channel MOSFET
Technology: Metal Oxide (MOSFET)
Gate Voltage Range (Vgs): ±20V maximum

Performance Consideration Parameters:

Continuous Drain Current (Id): Must support application requirements
On-State Resistance (Rds On): Lower values indicate improved efficiency
Gate Charge (Qg): Affects switching speed and drive requirements
Input Capacitance (Ciss): Influences gate drive circuit design
Power Dissipation Rating: Must accommodate thermal requirements
Operating Temperature Range: Must cover application environment

The FDB6670AS operates at 62A continuous drain current with 8.5 mOhm on-state resistance. Substitute parts are grouped by their ability to meet or exceed these electrical specifications within the same package footprint.

Parameter Comparison

Parameter	FDB6670AS (Main)	PSMN017-30BL,118	PSMN4R3-30BL,118	Unit
Manufacturer	onsemi	Nexperia USA Inc.	Nexperia USA Inc.	—
Drain to Source Voltage (Vdss)	30	30	30	V
Continuous Drain Current (Id) @ 25°C	62 (Ta)	32 (Tc)	100 (Tc)	A
Rds On (Max) @ Id, Vgs	8.5 @ 31A, 10V	17 @ 10A, 10V	4.1 @ 15A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	3	2.15	2.15	V @ 1mA
Gate Charge (Qg) @ Vgs	39 @ 15V	10.7 @ 10V	41.5 @ 10V	nC
Input Capacitance (Ciss) @ Vds	1570 @ 15V	552 @ 15V	2400 @ 15V	pF
Power Dissipation (Max)	62.5 (Tc)	47 (Tc)	103 (Tc)	W
Operating Temperature Range	-55 to 150	-55 to 175	-55 to 175	°C (TJ)
Package Type	TO-263 (D2PAK)	D2PAK	D2PAK	Surface Mount
Vgs (Max)	±20	±20	±20	V
Product Status	Obsolete	Obsolete	Active	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

PSMN4R3-30BL,118 (Nexperia USA Inc.)

This substitute provides superior electrical performance relative to the FDB6670AS. The PSMN4R3-30BL,118 delivers 100A continuous drain current with 4.1 mOhm on-state resistance, representing a 61% increase in current capacity and 52% reduction in on-state resistance. The device maintains identical 30V Vdss rating and compatible D2PAK package configuration. Operating temperature range extends to 175°C, exceeding the FDB6670AS specification. Product status is Active, ensuring long-term availability and supply chain stability. RoHS3 compliance and REACH Unaffected status align with current regulatory requirements. This part is suitable for applications requiring higher current handling or improved thermal efficiency.

PSMN017-30BL,118 (Nexperia USA Inc.)

This substitute provides reduced electrical performance relative to the FDB6670AS. The PSMN017-30BL,118 delivers 32A continuous drain current with 17 mOhm on-state resistance, representing a 48% reduction in current capacity and 100% increase in on-state resistance. The device maintains identical 30V Vdss rating and compatible D2PAK package configuration. Operating temperature range extends to 175°C, exceeding the FDB6670AS specification. Product status is Obsolete, matching the main part classification. RoHS3 compliance and REACH Unaffected status align with current regulatory requirements. This part is suitable only for applications with reduced current requirements or where lower gate charge is beneficial.

Frequently Asked Questions (FAQ)

Q: Can the PSMN4R3-30BL,118 directly replace the FDB6670AS in existing designs?

A: The PSMN4R3-30BL,118 is electrically compatible as a direct replacement. Both devices share identical 30V Vdss rating, ±20V Vgs maximum, and D2PAK package configuration. The PSMN4R3-30BL,118 provides superior current handling (100A vs. 62A) and lower on-state resistance (4.1 mOhm vs. 8.5 mOhm), making it suitable for the same application space with improved performance margins. Gate charge and input capacitance differ, requiring verification that gate drive circuitry can accommodate these parameters.

Q: What are the key differences between the two substitute parts?

A: The PSMN4R3-30BL,118 and PSMN017-30BL,118 differ significantly in current capacity and on-state resistance. The PSMN4R3-30BL,118 provides 100A continuous current with 4.1 mOhm resistance, while the PSMN017-30BL,118 provides 32A continuous current with 17 mOhm resistance. The PSMN4R3-30BL,118 is Active status with higher power dissipation rating (103W), while the PSMN017-30BL,118 is Obsolete status with lower power dissipation rating (47W). Both maintain 30V Vdss and D2PAK package compatibility.

Q: Are there package compatibility concerns when substituting these parts?

A: All three parts utilize the TO-263 (D2PAK) Surface Mount package with identical pin configuration (2 Leads + Tab). Physical footprint and PCB layout compatibility are maintained across all substitutes. No package-related modifications to existing designs are required.

Q: How do gate charge differences affect circuit design?

A: The FDB6670AS specifies 39 nC gate charge at 15V, while the PSMN4R3-30BL,118 specifies 41.5 nC at 10V, and the PSMN017-30BL,118 specifies 10.7 nC at 10V. Gate charge influences the energy required to switch the device and the speed of switching transitions. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Designs using the PSMN017-30BL,118 benefit from reduced gate charge, while designs using the PSMN4R3-30BL,118 require gate drive circuits capable of handling slightly higher charge.

Q: What is the significance of product status (Active vs. Obsolete)?

A: Product status indicates manufacturer support and supply availability. The PSMN4R3-30BL,118 is Active status, ensuring continued manufacturing, technical support, and long-term supply chain availability. The FDB6670AS and PSMN017-30BL,118 are Obsolete status, indicating discontinued production and limited remaining inventory. For new designs or long-term production requirements, the Active status PSMN4R3-30BL,118 is preferred.

Q: Are there thermal management differences between these parts?

A: The FDB6670AS is rated for 62.5W power dissipation at case temperature (Tc), the PSMN017-30BL,118 for 47W, and the PSMN4R3-30BL,118 for 103W. Higher power dissipation ratings indicate greater thermal capacity. The PSMN4R3-30BL,118 accommodates higher power levels, while the PSMN017-30BL,118 accommodates lower power levels. Thermal design must account for the specific power dissipation rating of the selected device.

Q: Do these parts meet current regulatory compliance requirements?

A: The PSMN4R3-30BL,118 and PSMN017-30BL,118 are both ROHS3 Compliant and REACH Unaffected. The FDB6670AS does not specify RoHS status. For applications requiring RoHS compliance, the Nexperia substitutes are preferred. All three parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

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