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FDB6670AL N-Channel 30V 80A MOSFET Equivalent & Substitute Parts
Part Overview
The FDB6670AL is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 80A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design support and procurement requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling capability, and thermal performance while preserving mechanical package compatibility.
Substiute Parts
Key Parameters
| Parameter | FDB6670AL |
|---|---|
| Manufacturer | onsemi |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 40A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5V |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature Range | -65°C ~ 175°C (TJ) |
| Package Type | TO-263 (D2PAK) |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitute parts for the FDB6670AL are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:
Electrical Compatibility Requirements:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
- FET Type: N-Channel topology
- Technology: MOSFET (Metal Oxide)
- Package Type: TO-263 (D2PAK) mechanical compatibility
- Mounting Type: Surface Mount
Performance Considerations:
- Continuous Drain Current (Id): Substitute must support the application's current requirements
- On-Resistance (Rds On): Lower values indicate improved efficiency
- Gate Charge (Qg): Affects switching speed and drive circuit requirements
- Power Dissipation: Thermal capability must match or exceed application demands
- Operating Temperature Range: Must encompass application operating conditions
The identified substitute parts maintain the 30V Vdss rating and D2PAK package format, ensuring direct mechanical and electrical compatibility within the specified parameter envelope.
Parameter Comparison
| Parameter | FDB6670AL (onsemi) | PSMN4R3-30BL,118 (Nexperia) | PSMN017-30BL,118 (Nexperia) |
|---|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30V | 30V | 30V |
| Continuous Drain Current (Id) @ 25°C | 80A (Ta) | 100A (Tc) | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 40A, 10V | 4.1 mOhm @ 15A, 10V | 17 mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5V | 41.5 nC @ 10V | 10.7 nC @ 10V |
| Power Dissipation (Max) | 68W (Tc) | 103W (Tc) | 47W (Tc) |
| Operating Temperature Range | -65°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Input Capacitance (Ciss) @ Vds | 2440 pF @ 15V | 2400 pF @ 15V | 552 pF @ 15V |
| Package Type | TO-263 (D2PAK) | D2PAK | D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Product Status | Obsolete | Active | Obsolete |
| RoHS Status | Not specified | ROHS3 Compliant | Not specified |
Engineering Selection Recommendations
PSMN4R3-30BL,118 (Nexperia USA Inc.):
This substitute provides superior electrical performance with 100A continuous drain current, exceeding the FDB6670AL's 80A rating. The lower on-resistance of 4.1 mOhm at 15A, 10V compared to 6.5 mOhm at 40A, 10V results in reduced power dissipation and improved thermal efficiency. The device maintains the 30V Vdss rating and D2PAK package compatibility. Product status is Active, ensuring long-term availability and supply chain stability. RoHS3 compliance supports environmental and regulatory requirements. The higher power dissipation rating of 103W provides thermal margin for demanding applications. Operating temperature range of -55°C to 175°C covers most industrial applications, with the exception of the extended low-temperature capability of the original part.
PSMN017-30BL,118 (Nexperia USA Inc.):
This substitute is suitable for applications with reduced current requirements. The 32A continuous drain current rating is lower than the FDB6670AL's 80A specification. The higher on-resistance of 17 mOhm at 10A, 10V results in increased power dissipation compared to the primary part. The lower gate charge of 10.7 nC at 10V provides faster switching characteristics. Product status is Obsolete, limiting long-term procurement viability. This substitute is applicable only when current requirements do not exceed 32A and thermal constraints permit the higher on-resistance characteristics.
Frequently Asked Questions (FAQ)
Q: Can PSMN4R3-30BL,118 directly replace FDB6670AL in all applications?
A: PSMN4R3-30BL,118 maintains electrical compatibility through identical 30V Vdss rating and D2PAK package format. The higher current rating (100A vs. 80A) and lower on-resistance provide performance enhancement. Operating temperature range differs at the low end (-55°C vs. -65°C minimum), which must be evaluated for applications requiring extended low-temperature operation.
Q: What are the key differences between the two Nexperia substitutes?
A: PSMN4R3-30BL,118 is rated for 100A continuous drain current with 4.1 mOhm on-resistance and Active product status. PSMN017-30BL,118 is rated for 32A continuous drain current with 17 mOhm on-resistance and Obsolete product status. Selection depends on application current requirements and long-term supply chain considerations.
Q: Are package dimensions identical across all three parts?
A: All three parts use D2PAK (TO-263) Surface Mount packages with 2 leads plus tab configuration, ensuring mechanical compatibility for PCB layout and assembly processes.
Q: What is the significance of product status in substitute selection?
A: Active product status indicates ongoing manufacturer support, continued production, and long-term availability. Obsolete status indicates discontinued production, which may result in limited inventory and eventual unavailability. For new designs or long-term production requirements, Active status substitutes are preferred.
Q: How does on-resistance affect circuit performance?
A: Lower on-resistance reduces power dissipation during conduction, improving thermal efficiency and reducing heat management requirements. PSMN4R3-30BL,118 with 4.1 mOhm provides superior efficiency compared to FDB6670AL's 6.5 mOhm, while PSMN017-30BL,118 with 17 mOhm results in increased power dissipation.
Q: What is the impact of gate charge on circuit design?
A: Gate charge affects the energy required to switch the MOSFET and influences drive circuit design. FDB6670AL requires 33 nC at 5V, PSMN4R3-30BL,118 requires 41.5 nC at 10V, and PSMN017-30BL,118 requires 10.7 nC at 10V. Higher gate charge may require higher drive current or longer switching times.
Q: Are there compliance or certification differences between substitutes?
A: PSMN4R3-30BL,118 is RoHS3 compliant. Compliance status for FDB6670AL and PSMN017-30BL,118 is not specified in the provided data. All three parts are REACH Unaffected and classified under ECCN EAR99.
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