FDB5800_F085 N-Channel MOSFET 60V 14A/80A Equivalent & Substitute Parts

Part Overview

The FDB5800_F085 is an N-Channel MOSFET manufactured by onsemi in the PowerTrench® series, rated for 60V drain-to-source voltage with continuous drain current of 14A at Ta and 80A at Tc. The device is packaged in TO-263 (D2PAK) surface mount configuration with a maximum power dissipation of 242W at Tc. This part is currently listed as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	FDB5800_F085 Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current @ 25°C (Ta)	14	A
Continuous Drain Current @ 25°C (Tc)	80	A
Rds On (Max) @ 80A, 10V	6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	135	nC
Input Capacitance (Ciss) @ 15V	6625	pF
Power Dissipation (Max) @ Tc	242	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the FDB5800_F085 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Tc): 80A minimum
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 175°C minimum

Secondary Compatibility Parameters:

Rds On (Max): 6 mOhm or lower at specified conditions
Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
Input Capacitance (Ciss): Compatible with circuit switching characteristics
Power Dissipation: Sufficient thermal capability for application requirements

Substitute parts are grouped into two categories: direct equivalents (identical base product number with different packaging) and similar alternatives (different manufacturers with equivalent electrical performance and identical package form factor).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
FDB5800_F085	onsemi	60	80	6.0	2.5	135	6625	242	TO-263-3	Obsolete
FDB5800	onsemi	60	80	6.0	2.5	135	6625	242	TO-263-3	Active
AOB2606L	Alpha & Omega Semiconductor Inc.	60	72	6.2	3.5	75	4050	115	TO-263-3	Active
BUK966R5-60E,118	Nexperia USA Inc.	60	75	5.9	2.1	48	6900	182	TO-263-3	Active
BUK969R0-60E,118	Nexperia USA Inc.	60	75	8.0	2.1	29.8	4350	137	TO-263-3	Active
IPB057N06NATMA1	Infineon Technologies	60	45	5.7	2.8	27	2000	83	TO-263-3	Active
IPB80N06S405ATMA2	Infineon Technologies	60	80	5.7	4.0	81	6500	107	TO-263-3	Active
IPB80N06S407ATMA2	Infineon Technologies	60	80	—	4.0	56	4500	79	TO-263-3	Active
PSMN004-60B,118	Nexperia USA Inc.	60	75	3.6	4.0	168	8300	230	TO-263-3	Active
PSMN005-75B,118	Nexperia USA Inc.	75	75	5.0	4.0	165	8250	230	TO-263-3	Active
SQM110N05-06L_GE3	Vishay Siliconix	55	110	6.0	2.5	110	4440	157	TO-263-3	Active

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

The FDB5800 (base product number without suffix) from onsemi is the direct equivalent to FDB5800_F085. This part maintains identical electrical specifications across all critical parameters including Vdss, continuous drain current, Rds On, gate threshold voltage, and power dissipation. The primary distinction is product status: FDB5800 is active with 15,265 units in stock, whereas FDB5800_F085 is obsolete. This substitution requires no circuit redesign and provides full functional compatibility.

Alternative Substitutes by Application Requirement:

For applications requiring maximum current handling at 60V:

IPB80N06S405ATMA2 and IPB80N06S407ATMA2 (Infineon Technologies) both support 80A continuous drain current at Tc with 60V Vdss. Both devices carry AEC-Q101 automotive qualification. IPB80N06S405ATMA2 provides 107W power dissipation, while IPB80N06S407ATMA2 provides 79W. Selection depends on thermal management requirements.

For applications with reduced current requirements (45A to 75A range):

BUK966R5-60E,118 (Nexperia USA Inc.) supports 75A at Tc with superior Rds On of 5.9 mOhm and carries AEC-Q101 automotive qualification.
PSMN004-60B,118 (Nexperia USA Inc.) supports 75A at Tc with lowest Rds On of 3.6 mOhm, providing superior efficiency characteristics.
AOB2606L (Alpha & Omega Semiconductor Inc.) supports 72A at Tc with Rds On of 6.2 mOhm.

For applications with voltage margin requirements:

PSMN005-75B,118 (Nexperia USA Inc.) provides 75V Vdss rating with 75A continuous drain current, offering additional voltage headroom beyond the 60V specification.

For applications with lower current requirements:

IPB057N06NATMA1 (Infineon Technologies) supports 45A at Tc with lowest input capacitance of 2000 pF, beneficial for high-frequency switching applications.
SQM110N05-06L_GE3 (Vishay Siliconix) supports 110A at Tc with 55V Vdss, providing higher current capability at slightly reduced voltage rating.

All recommended substitutes maintain TO-263-3 (D2PAK) package compatibility, surface mount mounting type, and -55°C to 175°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can FDB5800_F085 be directly replaced with FDB5800?

A: Yes. FDB5800 is the direct equivalent with identical electrical specifications. The primary difference is product status: FDB5800 is active while FDB5800_F085 is obsolete. No circuit modifications are required.

Q: What is the minimum continuous drain current requirement for substitute selection?

A: The FDB5800_F085 specifies 80A continuous drain current at Tc. Substitute parts must support at least 80A at Tc to maintain equivalent current handling capability. Parts with lower ratings (such as AOB2606L at 72A or IPB057N06NATMA1 at 45A) are suitable only for applications with reduced current requirements.

Q: Are all substitute parts compatible with the TO-263-3 (D2PAK) package footprint?

A: Yes. All listed substitute parts use TO-263-3 (D2PAK) package configuration with identical pin assignments (2 Leads + Tab). Direct PCB footprint compatibility is maintained across all substitutes.

Q: What is the significance of Rds On (on-resistance) in substitute selection?

A: Rds On determines conduction losses and heat generation. The FDB5800_F085 specifies 6 mOhm maximum at 80A, 10V. Substitutes with lower Rds On (such as PSMN004-60B,118 at 3.6 mOhm) reduce power dissipation and improve efficiency. Substitutes with higher Rds On increase conduction losses and require thermal management verification.

Q: Can PSMN005-75B,118 be used as a substitute despite its 75V Vdss rating?

A: Yes. PSMN005-75B,118 has a higher Vdss rating (75V versus 60V), which provides additional voltage margin. This part is suitable for applications where the circuit voltage does not exceed 60V. The higher voltage rating does not create incompatibility; it provides design flexibility.

Q: What is the importance of gate threshold voltage (Vgs(th)) in substitution?

A: Gate threshold voltage determines the gate voltage required to turn the MOSFET on. The FDB5800_F085 specifies 2.5V at 250µA. Substitutes with higher Vgs(th) (such as AOB2606L at 3.5V or Infineon parts at 4.0V) require higher gate drive voltage. Substitutes with lower Vgs(th) (such as BUK966R5-60E,118 at 2.1V) require lower gate drive voltage. Gate drive circuit compatibility must be verified.

Q: Are automotive-qualified substitutes required for this application?

A: Automotive qualification (AEC-Q101) is not required unless the application is automotive. BUK966R5-60E,118, BUK969R0-60E,118, IPB80N06S405ATMA2, and IPB80N06S407ATMA2 carry AEC-Q101 qualification. Non-automotive applications may use any listed substitute meeting electrical and package requirements.

Q: What is the impact of input capacitance (Ciss) on circuit performance?

A: Input capacitance affects gate charge requirements and switching speed. The FDB5800_F085 specifies 6625 pF at 15V. Substitutes with lower Ciss (such as IPB057N06NATMA1 at 2000 pF) enable faster switching and reduce gate drive power. Substitutes with higher Ciss (such as PSMN004-60B,118 at 8300 pF) require higher gate charge and may slow switching. Selection depends on circuit switching frequency and gate drive capability.

Q: Can parts with lower power dissipation ratings be used?

A: Power dissipation rating indicates thermal capability at Tc. The FDB5800_F085 specifies 242W at Tc. Substitutes with lower ratings (such as IPB80N06S407ATMA2 at 79W) have reduced thermal capacity. These parts are suitable only if the application's actual power dissipation does not exceed the substitute's rating. Thermal analysis is required to confirm adequacy.

Q: What packaging options are available for these substitutes?

A: All listed substitutes are available in Tape & Reel (TR) or Cut Tape (CT) & Digi-Reel® packaging for surface mount assembly. Specific packaging availability varies by manufacturer and distributor. Verify packaging format with supplier before procurement.

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