FDB5800 Equivalent & Substitute Parts

Part Overview

The FDB5800 is an N-Channel 60V MOSFET manufactured by onsemi in the PowerTrench® series. This device is rated for 14A continuous drain current at 25°C ambient temperature (Ta) and 80A at case temperature (Tc), with a maximum power dissipation of 242W. The FDB5800 is packaged in the TO-263 (D2PAK) surface mount configuration and is currently in Active product status with RoHS3 compliance.

Substitute parts are necessary when the FDB5800 reaches end-of-life status, when inventory constraints occur, or when design requirements necessitate alternative electrical or thermal characteristics within the same voltage and package class.

Key Parameters

Parameter	FDB5800 Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current @ Tc	80	A
Continuous Drain Current @ Ta	14	A
Rds On (Max) @ 80A, 10V	6	mOhm
Gate Charge (Qg) @ 10V	135	nC
Input Capacitance (Ciss) @ 15V	6625	pF
Power Dissipation (Max)	242	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263 (D2PAK)	—
Mounting Type	Surface Mount	—
Product Status	Active	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FDB5800 is determined by the following critical parameters:

Voltage Class: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 60V or higher to ensure safe operation in the same circuit topology.

Package Compatibility: All substitute parts must use the TO-263 (D2PAK) surface mount package to maintain mechanical and thermal interface compatibility with existing PCB layouts.

Current Rating: Substitute parts must support a minimum continuous drain current of 80A at case temperature (Tc) to meet or exceed the thermal performance envelope of the FDB5800.

On-Resistance (Rds On): Substitute parts with lower Rds On values reduce power dissipation and improve efficiency; however, parts with higher Rds On values may be acceptable if thermal management is adequate for the application.

Gate Charge (Qg) and Input Capacitance (Ciss): These parameters affect switching speed and gate drive requirements. Substitute parts with significantly different values may require gate driver circuit adjustments.

Temperature Range: All substitute parts must support the operating temperature range of -55°C to 175°C (TJ).

Compliance: All substitute parts must maintain RoHS3 compliance and REACH unaffected status to meet regulatory requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg @ 10V (nC)	Ciss (pF)	Pd Max (W)	Package	Status
FDB5800	onsemi	60	80	6.0	135	6625	242	TO-263 (D2PAK)	Active
BUK966R5-60E,118	Nexperia USA Inc.	60	75	5.9	48	6900	182	D2PAK	Active
BUK969R0-60E,118	Nexperia USA Inc.	60	75	8.0	29.8	4350	137	D2PAK	Active
IPB054N06N3GATMA1	Infineon Technologies	60	80	5.4	82	6600	115	TO-263 (D2PAK)	Last Time Buy
IPB057N06NATMA1	Infineon Technologies	60	45	5.7	27	2000	83	TO-263 (D2PAK)	Active
IPB80N06S405ATMA2	Infineon Technologies	60	80	5.7	81	6500	107	TO-263 (D2PAK)	Active
IPB80N06S407ATMA2	Infineon Technologies	60	80	—	56	4500	79	TO-263 (D2PAK)	Active
PSMN004-60B,118	Nexperia USA Inc.	60	75	3.6	168	8300	230	D2PAK	Active
PSMN005-75B,118	Nexperia USA Inc.	75	75	5.0	165	8250	230	D2PAK	Active
SQM110N05-06L_GE3	Vishay Siliconix	55	110	6.0	110	4440	157	TO-263 (D2PAK)	Active

Engineering Selection Recommendations

Direct Substitutes (80A @ Tc, 60V Vdss):

The IPB80N06S405ATMA2 and IPB80N06S407ATMA2 from Infineon Technologies are direct electrical equivalents to the FDB5800, both rated for 80A continuous drain current at case temperature and 60V Vdss. Both devices are in Active product status with AEC-Q101 automotive qualification. The IPB80N06S405ATMA2 exhibits lower Rds On (5.7 mOhm) compared to the FDB5800 (6.0 mOhm), resulting in reduced power dissipation. The IPB80N06S407ATMA2 provides further optimization with lower gate charge (56 nC) and reduced input capacitance (4500 pF), enabling faster switching characteristics.

High-Current Alternatives (75A @ Tc, 60V Vdss):

The BUK966R5-60E,118 from Nexperia USA Inc. is rated for 75A continuous drain current at case temperature with 60V Vdss. This device is in Active product status with AEC-Q101 automotive qualification. The Rds On specification (5.9 mOhm @ 25A, 10V) is comparable to the FDB5800, though the lower continuous current rating (75A versus 80A) may require thermal analysis for applications demanding sustained 80A operation.

Lower-Current Alternative (45A @ Tc, 60V Vdss):

The IPB057N06NATMA1 from Infineon Technologies is rated for 45A continuous drain current at case temperature with 60V Vdss. This device is in Active product status. The significantly lower gate charge (27 nC) and input capacitance (2000 pF) indicate faster switching performance. This part is suitable for applications where the FDB5800's 80A rating exceeds thermal or current requirements.

Higher-Voltage Alternative (75V Vdss):

The PSMN005-75B,118 from Nexperia USA Inc. provides a 75V Vdss rating with 75A continuous drain current at case temperature. This device is in Active product status. The elevated voltage rating accommodates circuits with higher transient voltage spikes while maintaining the same package form factor. The Rds On (5.0 mOhm @ 25A, 10V) is lower than the FDB5800, reducing conduction losses.

Higher-Current Alternative (110A @ Tc, 55V Vdss):

The SQM110N05-06L_GE3 from Vishay Siliconix is rated for 110A continuous drain current at case temperature with 55V Vdss. This device is in Active product status. The lower voltage rating (55V versus 60V) requires verification that the application does not expose the device to voltages exceeding 55V. The higher current rating (110A) provides thermal margin for high-current applications.

Last Time Buy Status:

The IPB054N06N3GATMA1 from Infineon Technologies is designated as Last Time Buy. This device is rated for 80A continuous drain current at case temperature with 60V Vdss and exhibits lower Rds On (5.4 mOhm) than the FDB5800. Procurement of this part should be completed before end-of-life cutoff if continued supply is required.

Frequently Asked Questions (FAQ)

Q: Can the IPB80N06S405ATMA2 directly replace the FDB5800 without circuit modifications?

A: The IPB80N06S405ATMA2 is electrically compatible with the FDB5800 in the same TO-263 (D2PAK) package. Both devices share identical Vdss (60V) and Tc current ratings (80A). The lower Rds On (5.7 mOhm versus 6.0 mOhm) reduces power dissipation, which is beneficial. Gate charge and input capacitance are similar, so gate driver circuits require no adjustment. Direct substitution is supported.

Q: Why does the PSMN005-75B,118 have a higher Vdss rating (75V) than the FDB5800 (60V)?

A: The PSMN005-75B,118 is designed for applications requiring higher voltage headroom to accommodate transient overvoltages or higher supply rail voltages. The elevated Vdss rating does not prevent use in 60V circuits; however, the device will occupy more silicon area for the same current rating, potentially affecting cost and thermal performance. Selection depends on circuit voltage requirements.

Q: Is the BUK969R0-60E,118 suitable for applications requiring sustained 80A operation?

A: The BUK969R0-60E,118 is rated for 75A continuous drain current at case temperature, which is 5A lower than the FDB5800's 80A rating. For applications requiring sustained 80A operation, thermal analysis must confirm that the lower current rating does not cause junction temperature to exceed 175°C. The lower power dissipation (137W versus 242W) may provide adequate thermal margin depending on heat sink design.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. The FDB5800 has a gate charge of 135 nC at 10V. Substitute parts with lower gate charge (such as BUK969R0-60E,118 at 29.8 nC) enable faster switching and reduce gate driver power dissipation. Substitute parts with higher gate charge (such as PSMN004-60B,118 at 168 nC) require more gate drive energy but may offer lower on-resistance. Gate driver circuits must supply sufficient current to charge the gate within the required switching time.

Q: Can the SQM110N05-06L_GE3 be used in a circuit designed for 60V operation?

A: The SQM110N05-06L_GE3 has a Vdss rating of 55V, which is 5V lower than the FDB5800. This device cannot be used in circuits where the drain-source voltage may exceed 55V, as exceeding this rating will cause device failure. The application circuit voltage must be verified to remain below 55V under all operating and transient conditions before substitution.

Q: What is the difference between the IPB80N06S405ATMA2 and IPB80N06S407ATMA2?

A: Both devices are rated for 80A continuous drain current at case temperature with 60V Vdss and are packaged in TO-263 (D2PAK). The IPB80N06S407ATMA2 exhibits lower gate charge (56 nC versus 81 nC) and lower input capacitance (4500 pF versus 6500 pF), enabling faster switching performance and reduced gate driver power dissipation. The IPB80N06S407ATMA2 also has lower power dissipation (79W versus 107W), indicating improved efficiency. Selection depends on whether faster switching or lower conduction loss is prioritized.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference are RoHS3 compliant and REACH unaffected, matching the compliance status of the FDB5800. Regulatory requirements are satisfied across all listed alternatives.

Q: What is the impact of input capacitance (Ciss) on circuit performance?

A: Input capacitance affects the gate-source voltage rise time during switching transitions. Higher input capacitance (such as PSMN004-60B,118 at 8300 pF) requires more gate charge to reach the threshold voltage, potentially slowing switching speed. Lower input capacitance (such as IPB057N06NATMA1 at 2000 pF) enables faster switching. Gate driver circuits must supply sufficient current to charge the input capacitance within the required switching time window.

Q: Is the IPB054N06N3GATMA1 still available for new designs?

A: The IPB054N06N3GATMA1 is designated as Last Time Buy, indicating that Infineon Technologies will discontinue this part. New designs should not incorporate this device. Existing designs using this part should transition to an alternative such as the IPB80N06S405ATMA2 or IPB80N06S407ATMA2 before the end-of-life date.

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