FDB5690 Equivalent & Substitute Parts

Part Overview

The FDB5690 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 32A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for power switching applications requiring moderate current handling and thermal dissipation up to 58W.

The FDB5690 is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

FDB5690

onsemiIn Stock: 2380FDB5690 Datasheet

Current PartRFQ

PSMN015-60BS,118

Nexperia USA Inc.In Stock: 12771PSMN015-60BS,118 Datasheet

SimilarRFQ

STB55NF06T4

STMicroelectronicsIn Stock: 18921STB55NF06T4 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDB5690 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 60V Vdss specification to ensure safe operation within the same voltage domain.

Package Compatibility: All substitute parts must use the TO-263 (D2PAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management systems.

Current Capability: Substitute parts must support continuous drain current ratings equal to or greater than 32A at 25°C to maintain or exceed the original design performance.

Gate Threshold Voltage: Substitute parts must maintain Vgs(th) specifications compatible with the 4V threshold to ensure consistent gate drive requirements.

Thermal Characteristics: Substitute parts must support power dissipation ratings sufficient for the application thermal environment.

Electrical Characteristics: On-state resistance (Rds On), gate charge (Qg), and input capacitance (Ciss) must be within acceptable ranges to maintain switching performance and efficiency.

The two substitute parts identified—PSMN015-60BS,118 and STB55NF06T4—meet all critical substitution criteria and are classified as active products with current manufacturing availability.

Parameter Comparison

Engineering Selection Recommendations

PSMN015-60BS,118 (Nexperia USA Inc.): This substitute part is classified as active with current manufacturing status and RoHS3 compliance. It provides 50A continuous drain current, exceeding the FDB5690 specification by 56%. The on-state resistance of 14.8 mOhm is lower than the FDB5690, resulting in reduced conduction losses. Gate charge is reduced to 20.9 nC, enabling faster switching transitions. Power dissipation capability is increased to 86W. This part is suitable for applications requiring improved efficiency and thermal performance within the same voltage and package constraints.

STB55NF06T4 (STMicroelectronics): This substitute part is classified as active with current manufacturing status and RoHS3 compliance. It provides 50A continuous drain current, exceeding the FDB5690 specification by 56%. The on-state resistance of 18 mOhm is lower than the FDB5690, reducing conduction losses. Power dissipation capability is increased to 110W, providing enhanced thermal headroom. Gate charge is 60 nC, which is higher than the FDB5690, requiring consideration in gate drive circuit design. This part is suitable for applications requiring higher current capacity and thermal performance.

Both substitute parts maintain the 60V voltage rating, TO-263 (D2PAK) package compatibility, and MSL 1 moisture sensitivity level. Both are REACH unaffected and classified under ECCN EAR99. Selection between these substitutes depends on specific application requirements regarding switching speed, conduction losses, and thermal management.

Frequently Asked Questions (FAQ)

Q: Can the PSMN015-60BS,118 or STB55NF06T4 be used as direct replacements for the FDB5690?

A: Both parts are mechanically and electrically compatible substitutes. They share the same 60V voltage rating, TO-263 (D2PAK) package, and surface mount configuration. Both support continuous drain currents exceeding the FDB5690 specification. PCB layout and thermal management considerations remain unchanged due to identical package geometry.

Q: What are the key differences between the two substitute parts?

A: The PSMN015-60BS,118 features lower on-state resistance (14.8 mOhm) and lower gate charge (20.9 nC), resulting in reduced conduction losses and faster switching. The STB55NF06T4 features higher power dissipation capability (110W) and higher gate charge (60 nC). Selection depends on whether the application prioritizes switching speed and efficiency or thermal headroom and current handling.

Q: Are there any temperature range limitations when substituting?

A: The FDB5690 operates from -65°C to 175°C. Both substitute parts operate from -55°C to 175°C. Applications requiring operation below -55°C junction temperature cannot use these substitutes without design modification.

Q: Do the substitute parts require different gate drive circuits?

A: Both substitute parts maintain the 4V gate threshold voltage specification. The PSMN015-60BS,118 has lower gate charge (20.9 nC), while the STB55NF06T4 has higher gate charge (60 nC). Gate drive circuits designed for the FDB5690 (33 nC) may require adjustment for optimal switching performance with the STB55NF06T4 due to its higher gate charge.

Q: Are moisture sensitivity and compliance certifications equivalent?

A: All three parts—FDB5690, PSMN015-60BS,118, and STB55NF06T4—are classified as MSL 1 (Unlimited). All are REACH unaffected and classified under ECCN EAR99. The substitute parts carry RoHS3 compliance certification, ensuring regulatory alignment with current environmental standards.

Q: What is the impact of different on-state resistance values?

A: The FDB5690 has 27 mOhm on-state resistance. The PSMN015-60BS,118 has 14.8 mOhm (45% lower), reducing conduction losses and heat generation. The STB55NF06T4 has 18 mOhm (33% lower), also reducing conduction losses. Lower on-state resistance improves overall circuit efficiency and reduces thermal stress on the component.

Q: Can these parts be used in high-frequency switching applications?

A: The PSMN015-60BS,118 with lower gate charge (20.9 nC) is better suited for high-frequency switching applications, enabling faster transitions and reduced switching losses. The STB55NF06T4 with higher gate charge (60 nC) may require more robust gate drive circuits for high-frequency operation but provides greater thermal margin.