FDB52N20TM N-Channel MOSFET 200V 52A Equivalent & Substitute Parts

Part Overview

The FDB52N20TM is an N-Channel MOSFET manufactured by onsemi in the UniFET™ series, rated for 200V drain-to-source voltage with 52A continuous drain current at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is classified as Active product status with full RoHS3 compliance. The FDB52N20TM is suitable for high-current switching applications requiring efficient thermal management in a compact form factor.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or when specific performance characteristics of substitute devices align with application parameters while maintaining functional compatibility within the 200V MOSFET category.

Substiute Parts

FDB52N20TM

onsemiIn Stock: 5906FDB52N20TM Datasheet

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IXTA48N20T

IXYSIn Stock: 1219IXTA48N20T Datasheet

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PHB33NQ20T,118

Nexperia USA Inc.In Stock: 3869PHB33NQ20T,118 Datasheet

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PSMN057-200B,118

Nexperia USA Inc.In Stock: 11240PSMN057-200B,118 Datasheet

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STB40NF20

STMicroelectronicsIn Stock: 1286STB40NF20 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDB52N20TM are identified based on strict electrical and mechanical compatibility within the N-Channel MOSFET 200V category. The primary substitution criteria are:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 200V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)
• Package Type: Surface Mount D2PAK/TO-263 variants (mechanical compatibility)
• RoHS3 Compliance: Required for regulatory alignment
• Moisture Sensitivity Level: MSL 1 (Unlimited) for handling compatibility

Functional Compatibility Parameters:

• Continuous Drain Current (Id): Substitute devices must operate within application current requirements
• On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
• Gate Charge (Qg): Affects switching speed and drive circuit requirements
• Operating Temperature Range: Must encompass application temperature envelope
• Power Dissipation: Thermal capability must support application duty cycle

Substitute devices listed below maintain 200V Vdss rating and Surface Mount D2PAK packaging, with variations in current rating, on-state resistance, and power dissipation characteristics. All substitutes are Active product status with RoHS3 compliance and MSL 1 rating.

Parameter Comparison

Engineering Selection Recommendations

All listed substitute parts maintain Active product status and full RoHS3 compliance with MSL 1 rating, ensuring regulatory and handling compatibility with the FDB52N20TM.

IXTA48N20T (IXYS): This substitute provides 48A continuous drain current with 50 mOhm on-state resistance, representing a 92% current rating relative to the FDB52N20TM. Power dissipation is rated at 250W, lower than the primary device. Operating temperature range extends to 175°C, providing enhanced thermal margin. This device is suitable for applications where the 48A current rating satisfies design requirements and thermal management is not constrained by the reduced power dissipation specification.

PHB33NQ20T,118 (Nexperia): This substitute provides 32.7A continuous drain current with 77 mOhm on-state resistance, representing a 63% current rating relative to the FDB52N20TM. Power dissipation is rated at 230W. Operating temperature range extends to 175°C. This device is suitable for lower-current applications or as a secondary source option where current requirements do not exceed 32.7A and on-state resistance characteristics are acceptable.

PSMN057-200B,118 (Nexperia): This substitute provides 39A continuous drain current with 57 mOhm on-state resistance, representing a 75% current rating relative to the FDB52N20TM. Power dissipation is rated at 250W. Operating temperature range extends to 175°C. Gate charge is specified at 96 nC, higher than the primary device. This device is suitable for mid-range current applications where the 39A rating aligns with design requirements.

STB40NF20 (STMicroelectronics): This substitute provides 40A continuous drain current with 45 mOhm on-state resistance, representing a 77% current rating relative to the FDB52N20TM. Power dissipation is rated at 160W, the lowest among substitutes. Operating temperature range matches the primary device at -55 to 150°C. On-state resistance is lower than the FDB52N20TM at 45 mOhm. This device is suitable for applications where current requirements do not exceed 40A and thermal dissipation is limited.

Frequently Asked Questions (FAQ)

Q: Can the IXTA48N20T replace the FDB52N20TM in all applications?

A: The IXTA48N20T is electrically compatible for 200V applications but provides 48A continuous drain current versus the FDB52N20TM's 52A rating. Substitution is valid only when application current requirements do not exceed 48A. Power dissipation is lower at 250W versus 357W. Extended operating temperature range to 175°C provides additional thermal margin.

Q: What is the primary difference between the Nexperia TrenchMOS™ substitutes?

A: PHB33NQ20T,118 provides 32.7A current rating with 77 mOhm on-state resistance. PSMN057-200B,118 provides 39A current rating with 57 mOhm on-state resistance. Both maintain 200V Vdss and D2PAK packaging. Selection depends on specific current and resistance requirements within the application design envelope.

Q: Is the STB40NF20 suitable for high-power applications?

A: The STB40NF20 provides 40A continuous drain current with 45 mOhm on-state resistance. Power dissipation is rated at 160W, the lowest among listed substitutes. This device is suitable for applications where thermal dissipation is constrained and current requirements do not exceed 40A. Applications requiring the full 357W dissipation capability of the FDB52N20TM should not use this substitute.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts are housed in Surface Mount D2PAK/TO-263 variants (TO-263AA, D2PAK, TO-263-3, TO-263AB), ensuring mechanical compatibility with the FDB52N20TM footprint. Pinout configuration is identical across all devices.

Q: What compliance certifications apply to all listed parts?

A: All parts including the FDB52N20TM and all substitutes are RoHS3 compliant, REACH unaffected, and classified as MSL 1 (Unlimited moisture sensitivity level). ECCN classification is EAR99 for all devices. HTSUS code is 8541.29.0095 for all devices.

Q: How do gate charge specifications affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the device and affects drive circuit design. FDB52N20TM specifies 63 nC at 10V. IXTA48N20T specifies 60 nC (similar). PHB33NQ20T,118 specifies 32.2 nC (lower, faster switching). PSMN057-200B,118 specifies 96 nC (higher, slower switching). STB40NF20 specifies 75 nC. Lower gate charge enables faster switching speeds with reduced drive circuit power consumption.

Q: What is the significance of on-state resistance (Rds On) variation?

A: On-state resistance directly affects conduction losses and thermal dissipation. FDB52N20TM specifies 49 mOhm at 26A, 10V. Lower Rds On values (STB40NF20 at 45 mOhm) reduce conduction losses. Higher Rds On values (PHB33NQ20T,118 at 77 mOhm) increase conduction losses. Selection depends on application current levels and thermal management requirements.

Q: Can substitutes be used interchangeably in production?

A: Substitutes are electrically compatible within the 200V MOSFET category but differ in current ratings, on-state resistance, power dissipation, and gate charge. Interchangeability requires design validation to confirm that substitute device specifications satisfy application requirements. Current rating, thermal dissipation, and switching characteristics must be verified for each application.