FDB3860 N-Channel MOSFET 100V 6.4A/30A TO-263 Equivalent & Substitute Parts

Part Overview

The FDB3860 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with continuous drain current of 6.4A (Ta) and 30A (Tc) in a surface mount TO-263 (D2PAK) package. This device is part of the PowerTrench® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices maintain the same voltage rating, package form factor, and compatible electrical characteristics while offering improved availability and extended product lifecycles.

Substiute Parts

FDB3860

onsemiIn Stock: 18550FDB3860 Datasheet

Current PartRFQ

BUK9640-100A,118

Nexperia USA Inc.In Stock: 5686BUK9640-100A,118 Datasheet

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PHB27NQ10T,118

Nexperia USA Inc.In Stock: 7999PHB27NQ10T,118 Datasheet

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PHB45NQ10T,118

Nexperia USA Inc.In Stock: 6002PHB45NQ10T,118 Datasheet

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PSMN009-100B,118

Nexperia USA Inc.In Stock: 800PSMN009-100B,118 Datasheet

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PSMN015-100B,118

Nexperia USA Inc.In Stock: 2978PSMN015-100B,118 Datasheet

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STB30NF10T4

STMicroelectronicsIn Stock: 16189STB30NF10T4 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDB3860 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): 100V (exact match required)
• FET Type: N-Channel (exact match required)
• Package: TO-263-3, D2PAK (2 Leads + Tab) (exact match required)
• Mounting Type: Surface Mount (exact match required)
• Gate Voltage Rating (Vgs): ±20V or greater (equal or higher acceptable)
• Moisture Sensitivity Level: 1 (Unlimited) (equal or better acceptable)

Performance Parameters (Higher Values Acceptable):

• Continuous Drain Current (Id @ Tc): 30A or greater
• Gate Charge (Qg): 30 nC or lower preferred for switching efficiency
• Rds On: Lower values preferred for reduced power dissipation
• Power Dissipation: 71W (Tc) or greater acceptable
• Operating Temperature: -55°C to 150°C minimum (extended ranges acceptable)

All substitute parts listed maintain the 100V Vdss rating, N-Channel configuration, and D2PAK package form factor. Substitute devices from Nexperia USA Inc. and STMicroelectronics are active products with current availability and full compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: STB30NF10T4 (STMicroelectronics)

The STB30NF10T4 is the closest functional equivalent to the FDB3860. It maintains the 100V Vdss rating, N-Channel configuration, and D2PAK package. With 35A continuous drain current, it exceeds the FDB3860's 30A rating. The device is active, ROHS3 compliant, and carries STripFET™ II series designation. Operating temperature extends to 175°C, providing improved thermal margin. Gate charge of 55 nC is slightly elevated compared to the FDB3860's 30 nC, resulting in marginally higher switching losses. Rds On of 45 mOhm at 15A is acceptable for most applications requiring the FDB3860's performance envelope.

Secondary Substitutes: Nexperia TrenchMOS™ Series

The PHB27NQ10T,118 provides 28A continuous current with identical gate charge (30 nC) and gate voltage rating (±20V) to the FDB3860. This device is suitable for applications where current requirements do not exceed 28A. The PHB45NQ10T,118 offers 47A continuous current with superior Rds On of 25 mOhm, making it appropriate for higher-current applications. Both devices are active, ROHS3 compliant, and rated to 175°C.

High-Current Alternatives: PSMN Series

The PSMN015-100B,118 and PSMN009-100B,118 are rated for 75A continuous current with significantly lower Rds On values (15 mOhm and 8.8 mOhm respectively). These devices are suitable for applications requiring substantially higher current capacity than the FDB3860. Gate charge increases proportionally with current rating (90 nC and 156 nC respectively), affecting switching frequency performance.

Automotive-Grade Option: BUK9640-100A,118

The BUK9640-100A,118 is qualified to AEC-Q101 automotive standards and rated for 39A continuous current. This device is appropriate for automotive and industrial applications requiring formal qualification documentation. Gate voltage rating is ±15V, which is acceptable for most standard gate drive circuits.

All substitute devices maintain REACH compliance, EAR99 ECCN classification, and MSL 1 (Unlimited) moisture sensitivity rating. Selection should be based on specific application current requirements, thermal management capabilities, and switching frequency constraints.

Frequently Asked Questions (FAQ)

Q: Can the FDB3860 be directly replaced with any of these substitute parts?

A: Direct replacement is possible only with devices maintaining identical electrical and mechanical parameters. The STB30NF10T4 provides the closest functional match with 35A continuous current in the same D2PAK package. Higher-current devices (PHB45NQ10T, PSMN series) are pin-compatible but deliver increased current capacity and lower on-resistance, which may require circuit validation depending on application design margins.

Q: What is the primary reason for substituting the FDB3860?

A: The FDB3860 is classified as obsolete. Substitute parts from active manufacturers (STMicroelectronics and Nexperia) ensure long-term availability, extended product lifecycles, and compliance with current environmental and quality standards (ROHS3, AEC-Q101 where applicable).

Q: Are all substitute parts compatible with the same PCB layout?

A: Yes. All substitute parts use the TO-263-3 D2PAK package with identical pin configuration and lead spacing. PCB layouts designed for the FDB3860 require no modification for mechanical compatibility. Electrical circuit validation is recommended to confirm performance adequacy for specific application requirements.

Q: What is the significance of gate charge (Qg) differences between the FDB3860 and substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. The FDB3860 and PHB27NQ10T,118 both specify 30 nC gate charge, resulting in identical switching energy. Higher gate charge values (STB30NF10T4 at 55 nC, PSMN009-100B,118 at 156 nC) increase switching losses and may require gate driver circuit adjustments for high-frequency applications.

Q: Which substitute is recommended for thermal-constrained applications?

A: The PSMN015-100B,118 offers the highest power dissipation rating (300W at Tc) and lowest Rds On (15 mOhm), resulting in minimal heat generation. This device is optimal for applications where thermal management is critical. The STB30NF10T4 provides balanced thermal performance (115W at Tc) with moderate Rds On (45 mOhm).

Q: Are there differences in gate threshold voltage (Vgs(th)) that affect circuit design?

A: The FDB3860 specifies Vgs(th) of 4.5V at 250µA. Most substitutes specify 4V at 1mA, representing a minor difference. Standard gate drive circuits operating at 10V or higher provide sufficient margin for all listed devices. The BUK9640-100A,118 specifies 2V at 1mA, which is lower but remains compatible with standard 10V gate drive levels.

Q: What compliance certifications should be verified for new designs?

A: All active substitute parts are ROHS3 compliant and REACH unaffected. The BUK9640-100A,118 carries AEC-Q101 automotive qualification, required for automotive applications. Verify specific compliance requirements for your application before final device selection.

Q: How does operating temperature range affect device selection?

A: The FDB3860 operates from -55°C to 150°C. All substitute parts extend the upper limit to 175°C, providing improved thermal margin. For applications operating near 150°C, substitutes offer additional safety margin. No design changes are required due to this extended range.

Q: Can higher-current devices (PSMN series) be used in place of the FDB3860 without circuit modification?

A: Pin-compatible substitution is mechanically and electrically feasible. However, significantly lower Rds On values (8.8 mOhm to 15 mOhm versus 37 mOhm) and higher gate charge (90 nC to 156 nC) may affect circuit performance. Applications with tight switching frequency or thermal budgets require validation testing to confirm acceptable operation.