FDB3682 N-Channel 100V MOSFET Equivalent & Substitute Parts

Part Overview

The FDB3682 is an N-Channel 100V MOSFET manufactured by onsemi in the PowerTrench® series. This device is rated for 6A continuous drain current at 25°C ambient temperature (Ta) and 32A at case temperature (Tc), with a maximum power dissipation of 95W. The FDB3682 is housed in a Surface Mount TO-263 (D2PAK) package and is currently Active in product status with RoHS3 compliance.

Equivalent and substitute parts are identified based on matching or exceeding the electrical and mechanical specifications of the FDB3682. Substitutes must maintain the same drain-source voltage rating (100V), compatible package format (D2PAK), and surface mount technology while providing comparable or superior current handling and thermal performance characteristics.

Key Parameters

Parameter	FDB3682 Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current @ Tc	32	A
Continuous Drain Current @ Ta	6	A
Rds On (Max) @ 32A, 10V	36	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	28	nC
Input Capacitance (Ciss) @ 25V	1250	pF
Power Dissipation (Max) @ Tc	95	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263 (D2PAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FDB3682 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 100V to ensure compatibility with the intended circuit voltage stress limits.

Package Format: All substitutes must use the D2PAK (TO-263-3) Surface Mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts and thermal management solutions.

Current Capability: Substitute parts are grouped by their continuous drain current rating at case temperature (Tc). The FDB3682 specifies 32A at Tc. Substitutes with equal or higher current ratings provide direct replacement capability. Parts with lower current ratings are listed for applications where reduced current handling is acceptable.

On-Resistance (Rds On): The FDB3682 specifies a maximum Rds On of 36mOhm at 32A and 10V gate voltage. Substitutes with equal or lower Rds On values provide equivalent or improved conduction efficiency.

Gate Threshold Voltage (Vgs(th)): The FDB3682 specifies 4V at 250µA. Substitutes with similar threshold voltages ensure compatible gate drive requirements.

Thermal Performance: Power dissipation capability at case temperature (Tc) is a key differentiator. The FDB3682 is rated for 95W at Tc. Substitutes with higher power ratings provide enhanced thermal headroom.

Compliance & Status: All listed substitutes are Active products with RoHS3 compliance and REACH Unaffected status, matching the regulatory profile of the FDB3682.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Power Diss. @ Tc (W)	Package	Status
FDB3682	onsemi	100	32	36	4	28	95	D2PAK	Active
STB30NF10T4	STMicroelectronics	100	35	45	4	55	115	D2PAK	Active
PHB27NQ10T,118	Nexperia USA Inc.	100	28	50	4	30	107	D2PAK	Active
IRL540NSTRLPBF	Infineon Technologies	100	36	44	2	74	140	D2PAK	Active
IRF540NSTRLPBF	Infineon Technologies	100	33	44	4	71	130	D2PAK	Active
IRF1310NSTRLPBF	Infineon Technologies	100	42	36	4	110	160	D2PAK	Active
BUK9640-100A,118	Nexperia USA Inc.	100	39	39	2	48	158	D2PAK	Active
PHB45NQ10T,118	Nexperia USA Inc.	100	47	25	4	61	150	D2PAK	Active
PSMN015-100B,118	Nexperia USA Inc.	100	75	15	4	90	300	D2PAK	Active
STB40NF10LT4	STMicroelectronics	100	40	33	2.5	64	150	D2PAK	Active

Engineering Selection Recommendations

Direct Equivalents (Matching Current Rating):

The IRL540NSTRLPBF and IRF540NSTRLPBF from Infineon Technologies provide current ratings of 36A and 33A respectively, closely matching the FDB3682's 32A specification. Both devices maintain the 100V Vdss rating and D2PAK package format. The IRL540NSTRLPBF offers superior thermal performance at 140W versus the FDB3682's 95W, with comparable Rds On characteristics. Both are Active products with full RoHS3 compliance.

Higher Current Capacity Substitutes:

The IRF1310NSTRLPBF (42A), BUK9640-100A,118 (39A), PHB45NQ10T,118 (47A), and PSMN015-100B,118 (75A) provide increased current handling capability while maintaining 100V Vdss and D2PAK packaging. These devices are suitable for applications requiring thermal margin or higher current transients. The PSMN015-100B,118 offers the highest current rating at 75A with the lowest Rds On at 15mOhm, providing significant performance headroom. All are Active products with RoHS3 compliance.

Lower Current Capacity Substitutes:

The PHB27NQ10T,118 (28A) and STB30NF10T4 (35A) provide current ratings at or slightly above the FDB3682's specification. The STB30NF10T4 from STMicroelectronics offers 35A with 115W power dissipation and is suitable for direct replacement in applications with stable thermal conditions. Both maintain full compliance and Active product status.

Thermal Performance Consideration:

All substitute parts listed exceed or match the FDB3682's 95W power dissipation rating at case temperature, with the exception of PHB27NQ10T,118 at 107W. This ensures thermal compatibility in existing designs with established heat sinking solutions.

Compliance & Availability:

All substitute parts are Active products with RoHS3 compliance, REACH Unaffected status, and EAR99 ECCN classification, matching the regulatory and export profile of the FDB3682. Inventory availability ranges from 1,572 to 35,300 units across the substitute options.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with a lower current rating than the FDB3682?

A: The PHB27NQ10T,118 is rated for 28A at Tc, which is lower than the FDB3682's 32A rating. This substitute is suitable only for applications where the actual circuit current demand does not exceed 28A. The FDB3682's 32A rating must not be exceeded in the application.

Q: What is the difference between continuous drain current at Ta versus Tc?

A: Continuous drain current at Ta (ambient temperature, 25°C) represents the device's current capability in free air without external heat sinking. Continuous drain current at Tc (case temperature) represents the current capability when the device case is maintained at a specified temperature, typically through heat sinking. The FDB3682 is rated for 6A at Ta and 32A at Tc. Substitute parts are selected based on Tc ratings to ensure thermal compatibility with existing heat sinking designs.

Q: Are all substitute parts pin-compatible with the FDB3682?

A: Yes. All substitute parts use the D2PAK (TO-263-3) package format with identical pin configuration: two leads plus a thermal tab. This ensures direct mechanical and electrical compatibility on existing PCB layouts without modification.

Q: What does Rds On represent and why is it important for substitution?

A: Rds On (on-resistance) is the resistance between drain and source when the MOSFET is fully conducting. Lower Rds On values result in lower conduction losses and reduced heat generation. The FDB3682 specifies 36mOhm at 32A and 10V. Substitutes with equal or lower Rds On values provide equivalent or improved efficiency. Higher Rds On values increase power dissipation and may require thermal design adjustments.

Q: Can I substitute the FDB3682 with a part rated for a higher voltage, such as 150V or 200V?

A: Substitution with higher voltage-rated devices is not recommended based on the provided parameters. The FDB3682 is specified for 100V Vdss applications. Higher voltage devices typically have different electrical characteristics, including higher Rds On and different gate charge requirements, which may affect circuit performance and efficiency.

Q: What is gate charge (Qg) and how does it affect substitution?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. The FDB3682 specifies 28nC at 10V. Substitutes with higher gate charge values (such as IRF1310NSTRLPBF at 110nC) require more gate drive energy and may increase switching losses. Substitutes with similar or lower gate charge values provide compatible gate drive requirements.

Q: Are all substitute parts suitable for automotive applications?

A: The BUK9640-100A,118 from Nexperia is qualified to AEC-Q101 automotive standards. Other substitute parts listed do not include automotive qualification in their specifications. If automotive qualification is required, the BUK9640-100A,118 is the appropriate choice among the substitutes provided.

Q: What is the significance of the threshold voltage (Vgs(th)) difference between parts?

A: Gate threshold voltage determines the gate voltage at which the MOSFET begins to conduct. The FDB3682 specifies 4V at 250µA. Substitutes with lower threshold voltages (such as IRL540NSTRLPBF and BUK9640-100A,118 at 2V) require less gate drive voltage to achieve conduction. Substitutes with similar threshold voltages (4V) provide equivalent gate drive requirements. Threshold voltage differences may affect switching speed and gate drive circuit design.

Q: How do I determine which substitute is best for my application?

A: Selection depends on three primary factors: (1) Required continuous drain current at case temperature—choose a substitute rated equal to or higher than your application's current demand; (2) Thermal environment—if heat sinking is limited, choose a substitute with higher power dissipation rating; (3) Gate drive capability—if gate drive voltage is limited, consider substitutes with lower threshold voltages. All listed substitutes maintain 100V Vdss and D2PAK packaging for direct mechanical compatibility.

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