FDB3672-F085 Equivalent & Substitute Parts

Part Overview

The FDB3672-F085 is an N-Channel 100V MOSFET manufactured by onsemi in the PowerTrench® series, housed in a TO-263 (D2PAK) surface mount package. This device is rated for 7.2A continuous drain current at 25°C ambient temperature and 44A at case temperature, with a maximum power dissipation of 120W. The part carries automotive-grade qualification (AEC-Q101) and is RoHS3 compliant.

The FDB3672-F085 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET specification.

Substiute Parts

FDB3672-F085
onsemiIn Stock: 1325FDB3672-F085 Datasheet
FDB3672-F085
Current Part
NVMFS021N10MCLT1G
onsemiIn Stock: 3112NVMFS021N10MCLT1G Datasheet
NVMFS021N10MCLT1G
MFR Recommended
BUK9629-100B,118
Nexperia USA Inc.In Stock: 10536BUK9629-100B,118 Datasheet
BUK9629-100B,118
Similar
PHB47NQ10T,118
Nexperia USA Inc.In Stock: 17222PHB47NQ10T,118 Datasheet
PHB47NQ10T,118
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PSMN034-100BS,118
Nexperia USA Inc.In Stock: 5552PSMN034-100BS,118 Datasheet
PSMN034-100BS,118
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RSJ400N10TL
Rohm SemiconductorIn Stock: 3111RSJ400N10TL Datasheet
RSJ400N10TL
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STB40NF10LT4
STMicroelectronicsIn Stock: 1620STB40NF10LT4 Datasheet
STB40NF10LT4
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current @ 25°C (Ta) 7.2 A
Continuous Drain Current @ Case (Tc) 44 A
RDS(on) Max @ 44A, 10V 28 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 31 nC
Input Capacitance (Ciss) @ 25V 1710 pF
Power Dissipation Max (Tc) 120 W
Operating Temperature Range -55 to 175 °C
Package Type TO-263 (D2PAK)
Mounting Type Surface Mount
Grade Automotive
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitution of the FDB3672-F085 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss) must equal or exceed 100V
  • Continuous drain current capability must support the application's current requirements
  • RDS(on) characteristics must be compatible with thermal and efficiency constraints
  • Gate threshold voltage and gate charge must be compatible with driver circuitry
  • Operating temperature range must encompass -55°C to 175°C

Mechanical Compatibility Criteria:

  • Package type must be TO-263 (D2PAK) for direct board-level substitution, or alternative surface mount packages with equivalent thermal and electrical performance
  • Mounting type must be surface mount
  • Pin configuration must match or be adaptable to existing PCB layouts

Compliance and Qualification:

  • Automotive-grade classification with AEC-Q101 qualification required
  • RoHS3 compliance mandatory
  • REACH unaffected status required

Substitute parts are grouped into two categories: Direct Package Equivalents (same D2PAK package) and Alternative Package Solutions (different surface mount packages with equivalent or superior electrical performance).

Parameter Comparison

Parameter FDB3672-F085 NVMFS021N10MCLT1G BUK9629-100B,118 PHB47NQ10T,118 PSMN034-100BS,118 RSJ400N10TL STB40NF10LT4
Manufacturer onsemi onsemi Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Rohm Semiconductor STMicroelectronics
Vdss (V) 100 100 100 100 100 100 100
Id @ Tc (A) 44 31 46 47 32 40 40
RDS(on) Max @ 10V (mOhm) 28 @ 44A 23 @ 7A 27 @ 25A 28 @ 25A 34.5 @ 15A 27 @ 40A 33 @ 20A
Vgs(th) (V) 4 @ 250µA 3 @ 42µA 2 @ 1mA 4 @ 1mA 4 @ 1mA 2.5 @ 1mA 2.5 @ 250µA
Qg @ 10V (nC) 31 13 33 66 23.8 90 64 @ 4.5V
Ciss @ 25V (pF) 1710 850 @ 50V 4360 3100 1201 3600 2300
Power Dissipation Max (W) 120 49 157 166 86 50 150
Operating Temp Range (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 to 150 -65 to 175
Package TO-263 (D2PAK) 5-DFN (8-SOFL) D2PAK D2PAK D2PAK LPTS D2PAK
Grade Automotive Automotive Automotive Automotive Automotive Automotive
AEC-Q101 Yes Yes Yes Yes Yes Yes
RoHS3 Yes Yes Yes Yes Yes Yes Yes
Product Status Obsolete Active Active Active Active Active Active

Engineering Selection Recommendations

Direct Package Equivalents (D2PAK / TO-263):

The following parts maintain the same D2PAK package footprint and are suitable for direct PCB substitution:

BUK9629-100B,118 (Nexperia USA Inc.) — Active product with 46A continuous drain current at case temperature and 157W power dissipation. Meets automotive grade and AEC-Q101 qualification. RDS(on) of 27mOhm at 25A, 10V provides comparable on-resistance performance. Gate charge of 33nC at 5V is compatible with standard gate drivers. Recommended for applications requiring higher current capacity than the original part.

PHB47NQ10T,118 (Nexperia USA Inc.) — Active product with 47A continuous drain current at case temperature and 166W power dissipation. Meets automotive grade and AEC-Q101 qualification. RDS(on) of 28mOhm at 25A, 10V matches the original specification. Gate charge of 66nC at 10V requires verification of driver capability. Recommended for direct replacement in equivalent current applications.

PSMN034-100BS,118 (Nexperia USA Inc.) — Active product with 32A continuous drain current at case temperature and 86W power dissipation. Meets automotive grade and AEC-Q101 qualification. RDS(on) of 34.5mOhm at 15A, 10V is higher than the original part. Suitable for applications with reduced current requirements or where thermal management is less critical.

STB40NF10LT4 (STMicroelectronics) — Active product with 40A continuous drain current at case temperature and 150W power dissipation. Meets automotive grade and AEC-Q101 qualification. RDS(on) of 33mOhm at 20A, 10V is slightly higher than the original. Operating temperature range extends to -65°C. Recommended for applications requiring extended low-temperature performance.

RSJ400N10TL (Rohm Semiconductor) — Active product with 40A continuous drain current at case temperature and 50W power dissipation. RDS(on) of 27mOhm at 40A, 10V provides comparable on-resistance. Gate charge of 90nC at 10V is significantly higher than the original part and requires driver verification. Operating temperature range limited to 150°C maximum. Automotive grade and AEC-Q101 qualification status not specified in provided data. Use only if thermal and driver constraints are satisfied.

Alternative Package Solution:

NVMFS021N10MCLT1G (onsemi) — Active product in 5-DFN (8-SOFL) package. Meets automotive grade and AEC-Q101 qualification. Continuous drain current of 31A at case temperature and 49W power dissipation are lower than the original part. RDS(on) of 23mOhm at 7A, 10V is superior. Gate charge of 13nC at 10V is significantly lower, reducing driver power requirements. Suitable for applications where package size reduction is acceptable and current requirements are lower. Requires PCB layout redesign due to different package footprint.

Frequently Asked Questions (FAQ)

Q: Can I use NVMFS021N10MCLT1G as a direct replacement for FDB3672-F085?

A: No. NVMFS021N10MCLT1G uses a 5-DFN (8-SOFL) package, which differs from the original TO-263 (D2PAK) package. PCB layout and footprint modifications are required. Additionally, the continuous drain current rating of 31A at case temperature is lower than the original 44A. Use only if your application current requirements do not exceed 31A and PCB redesign is feasible.

Q: Which substitute part has the closest electrical performance to FDB3672-F085?

A: PHB47NQ10T,118 provides the closest match with 47A continuous drain current at case temperature, 166W power dissipation, and RDS(on) of 28mOhm at 25A, 10V—identical to the original specification. Both parts are automotive-grade with AEC-Q101 qualification and D2PAK packaging.

Q: Are all substitute parts automotive-qualified?

A: All substitute parts listed except RSJ400N10TL carry automotive-grade classification and AEC-Q101 qualification. RSJ400N10TL automotive qualification status is not specified in the provided data. Verify with the manufacturer before use in automotive applications.

Q: What is the impact of different gate charge values on my circuit?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Higher gate charge values (such as RSJ400N10TL at 90nC) require more driver current and may increase switching losses. Lower values (such as NVMFS021N10MCLT1G at 13nC) reduce driver power requirements. Verify that your gate driver can supply the required charge for the selected substitute part.

Q: Can I use STB40NF10LT4 in applications requiring operation below -55°C?

A: Yes. STB40NF10LT4 has an operating temperature range of -65°C to 175°C, extending 10°C lower than the original FDB3672-F085. This part is suitable for applications requiring extended low-temperature performance.

Q: What are the thermal implications of using PSMN034-100BS,118?

A: PSMN034-100BS,118 has a maximum power dissipation of 86W at case temperature, compared to 120W for the original part. RDS(on) is also higher at 34.5mOhm. This part generates more heat at equivalent current levels and is suitable only for applications with reduced current requirements or enhanced thermal management.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the environmental compliance status of the original FDB3672-F085.

Q: Which substitute part offers the best on-resistance performance?

A: NVMFS021N10MCLT1G offers the lowest RDS(on) at 23mOhm at 7A, 10V. However, this part has lower current and power ratings. Among D2PAK package alternatives with comparable current ratings, BUK9629-100B,118 and RSJ400N10TL both provide 27mOhm RDS(on), matching or exceeding the original specification.

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