FDB3672 N-Channel MOSFET 100V 44A Equivalent & Substitute Parts

Part Overview

The FDB3672 is an N-Channel MOSFET manufactured by onsemi in the PowerTrench® series, rated for 100V drain-to-source voltage with continuous drain current of 44A (Tc) and maximum power dissipation of 120W. The device is packaged in TO-263 (D2PAK) surface mount configuration and operates across the temperature range of -55°C to 175°C.

The FDB3672 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Substiute Parts

FDB3672
onsemiIn Stock: 15501FDB3672 Datasheet
FDB3672
Current Part
FDB3672-F085
onsemiIn Stock: 1325FDB3672-F085 Datasheet
FDB3672-F085
Parametric Equivalent
AOB414
Alpha & Omega Semiconductor Inc.In Stock: 83435AOB414 Datasheet
AOB414
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BUK7628-100A/C,118
NXP USA Inc.In Stock: 919BUK7628-100A/C,118 Datasheet
BUK7628-100A/C,118
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BUK9629-100B,118
Nexperia USA Inc.In Stock: 10536BUK9629-100B,118 Datasheet
BUK9629-100B,118
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PHB47NQ10T,118
Nexperia USA Inc.In Stock: 17222PHB47NQ10T,118 Datasheet
PHB47NQ10T,118
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PSMN034-100BS,118
Nexperia USA Inc.In Stock: 5552PSMN034-100BS,118 Datasheet
PSMN034-100BS,118
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SQM47N10-24L_GE3
Vishay SiliconixIn Stock: 2727SQM47N10-24L_GE3 Datasheet
SQM47N10-24L_GE3
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STB30NF10T4
STMicroelectronicsIn Stock: 16189STB30NF10T4 Datasheet
STB30NF10T4
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STB40NF10LT4
STMicroelectronicsIn Stock: 1620STB40NF10LT4 Datasheet
STB40NF10LT4
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current @ 25°C (Tc) 44 A
Continuous Drain Current @ 25°C (Ta) 7.2 A
On-State Resistance (Rds On) @ 44A, 10V 28 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 31 nC
Input Capacitance (Ciss) @ 25V 1710 pF
Maximum Gate Voltage (Vgs) ±20 V
Power Dissipation (Tc) 120 W
Operating Temperature Range -55 to 175 °C
Package Type TO-263 (D2PAK)
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDB3672 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
  • Continuous Drain Current (Tc): Must equal or exceed 44A
  • On-State Resistance (Rds On): Must not exceed 28mOhm at rated current and gate voltage
  • Package Type: Must be TO-263 (D2PAK) or equivalent surface mount D2PAK configuration
  • Operating Temperature Range: Must span -55°C to 175°C minimum
  • Gate Threshold Voltage: Must be compatible with 4V nominal specification
  • Maximum Gate Voltage: Must accommodate ±20V operation

Secondary Compatibility Parameters:

  • Gate Charge (Qg): Lower values indicate faster switching; values up to 72nC are acceptable
  • Input Capacitance (Ciss): Values between 1180pF and 4360pF are acceptable
  • Power Dissipation: Must support minimum 120W at Tc

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications with different packaging or grades) and Similar Manufacturers (alternative suppliers with comparable or superior electrical performance within the same package family).

Parameter Comparison

Manufacturer Part Number Manufacturer Vdss (V) Id @ Tc (A) Rds On (mOhm) Qg @ 10V (nC) Ciss (pF) Power Diss. (W) Product Status Package
FDB3672 onsemi 100 44 28 31 1710 120 Obsolete TO-263 (D2PAK)
FDB3672-F085 onsemi 100 44 28 31 1710 120 Obsolete TO-263 (D2PAK)
AOB414 Alpha & Omega Semiconductor Inc. 100 51 25 34 2200 150 Active TO-263 (D2PAK)
BUK7628-100A/C,118 NXP USA Inc. 100 47 28 3100 166 Active D2PAK
BUK9629-100B,118 Nexperia USA Inc. 100 46 27 33 4360 157 Active D2PAK
PHB47NQ10T,118 Nexperia USA Inc. 100 47 28 66 3100 166 Active D2PAK
PSMN034-100BS,118 Nexperia USA Inc. 100 32 34.5 23.8 1201 86 Active D2PAK
SQM47N10-24L_GE3 Vishay Siliconix 100 47 24 72 3620 136 Active TO-263 (D2PAK)
STB30NF10T4 STMicroelectronics 100 35 45 55 1180 115 Active D2PAK
STB40NF10LT4 STMicroelectronics 100 40 33 64 2300 150 Active D2PAK

Engineering Selection Recommendations

Parametric Equivalent:

The FDB3672-F085 is a direct parametric equivalent to the FDB3672, offering identical electrical specifications. This part is classified as obsolete but carries AEC-Q101 automotive qualification and ROHS3 compliance, making it suitable for applications requiring automotive-grade reliability. The FDB3672-F085 is available in Cut Tape and Digi-Reel packaging formats.

Primary Substitute Recommendations:

AOB414 (Alpha & Omega Semiconductor Inc.) is an active-status substitute offering superior continuous drain current (51A vs. 44A) and improved on-state resistance (25mOhm vs. 28mOhm). This part exceeds the FDB3672 specifications and is ROHS3 compliant. The higher power dissipation rating (150W vs. 120W) provides additional thermal margin.

SQM47N10-24L_GE3 (Vishay Siliconix) is an active-status substitute with 47A continuous drain current and superior on-state resistance (24mOhm vs. 28mOhm). This TrenchFET® device is ROHS3 compliant and offers lower gate charge (72nC) for faster switching characteristics.

BUK9629-100B,118 (Nexperia USA Inc.) is an active-status substitute rated for 46A continuous drain current with 27mOhm on-state resistance. This part carries AEC-Q101 automotive qualification and ROHS3 compliance, making it suitable for automotive applications.

Secondary Substitute Options:

PHB47NQ10T,118 (Nexperia USA Inc.) provides 47A continuous drain current with identical on-state resistance (28mOhm). This part is ROHS3 compliant and active-status.

STB40NF10LT4 (STMicroelectronics) offers 40A continuous drain current with 33mOhm on-state resistance and is ROHS3 compliant. This part extends the operating temperature range to -65°C.

Limited Substitutes:

PSMN034-100BS,118 (Nexperia USA Inc.) provides only 32A continuous drain current, which falls below the FDB3672 specification of 44A. This part is suitable only for applications with reduced current requirements.

STB30NF10T4 (STMicroelectronics) provides only 35A continuous drain current and exhibits higher on-state resistance (45mOhm vs. 28mOhm), making it unsuitable for direct substitution in current-critical applications.

BUK7628-100A/C,118 (NXP USA Inc.) is RoHS non-compliant and should not be selected for new designs or applications requiring RoHS compliance.

Frequently Asked Questions (FAQ)

Q: Can the FDB3672-F085 be used as a direct replacement for the FDB3672?

A: Yes. The FDB3672-F085 is a parametric equivalent with identical electrical specifications (100V, 44A, 28mOhm Rds On, 120W power dissipation). Both parts are obsolete but share the same TO-263 (D2PAK) package. The FDB3672-F085 includes AEC-Q101 automotive qualification.

Q: What is the primary difference between parametric equivalents and similar manufacturers?

A: Parametric equivalents (such as FDB3672-F085) maintain identical electrical specifications to the original part. Similar manufacturers offer alternative suppliers with comparable or superior electrical performance. All listed substitutes maintain the same 100V Vdss rating and TO-263/D2PAK package family.

Q: Which substitute offers the best on-state resistance performance?

A: The SQM47N10-24L_GE3 offers the lowest on-state resistance at 24mOhm, followed by the AOB414 at 25mOhm and BUK9629-100B,118 at 27mOhm. Lower on-state resistance reduces power dissipation and heat generation.

Q: Are all substitute parts ROHS3 compliant?

A: No. The BUK7628-100A/C,118 is RoHS non-compliant and should not be selected for new designs. All other listed substitutes are ROHS3 compliant.

Q: Which substitutes carry automotive qualification?

A: The FDB3672-F085, BUK9629-100B,118, and STB40NF10LT4 carry AEC-Q101 automotive qualification. These parts are suitable for automotive applications requiring industry-standard reliability certification.

Q: Can I use the PSMN034-100BS,118 as a substitute?

A: The PSMN034-100BS,118 is rated for only 32A continuous drain current, which is below the FDB3672 specification of 44A. This part is suitable only for applications with reduced current requirements and cannot serve as a direct replacement.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge affects switching speed and drive circuit requirements. The FDB3672 specifies 31nC at 10V. Substitutes range from 23.8nC to 72nC. Lower gate charge enables faster switching; higher values require more drive current but may offer other performance benefits.

Q: Do all substitutes use the same package footprint?

A: Yes. All listed substitutes use TO-263 (D2PAK) or equivalent D2PAK surface mount packages with identical lead configurations (2 Leads + Tab). PCB footprints are interchangeable.

Q: What is the operating temperature range for all substitutes?

A: Most substitutes operate from -55°C to 175°C, matching the FDB3672. The STB40NF10LT4 extends the lower limit to -65°C, providing additional cold-temperature margin.

Q: Which substitute provides the highest power dissipation rating?

A: The BUK7628-100A/C,118 and PHB47NQ10T,118 both offer 166W power dissipation, compared to the FDB3672 specification of 120W. This provides additional thermal headroom in power-intensive applications.

Q: Can I substitute based on drain current alone?

A: No. Substitution requires matching or exceeding multiple parameters: Vdss (100V minimum), continuous drain current (44A minimum), on-state resistance (28mOhm maximum), package type (TO-263/D2PAK), and operating temperature range (-55°C to 175°C). All parameters must be satisfied simultaneously.

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