FDB3652 N-Channel MOSFET 100V 9A/61A D2PAK Equivalent & Substitute Parts

Part Overview

The FDB3652 is an N-Channel MOSFET manufactured by onsemi in the PowerTrench® series, rated for 100V drain-to-source voltage with continuous drain current of 9A at Ta and 61A at Tc. The device is housed in a TO-263 (D2PAK) surface mount package with a maximum power dissipation of 150W at Tc. The FDB3652 carries a product status of "Not For New Designs," indicating that onsemi has discontinued this component for new applications. Identifying equivalent and substitute parts is necessary to support existing designs, facilitate production continuity, and enable migration to active product lines from alternative manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Tc)	61	A
On-Resistance (Rds On) @ 61A, 10V	16	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	53	nC
Input Capacitance (Ciss) @ 25V	2880	pF
Power Dissipation (Max) @ Tc	150	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the FDB3652 is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Electrical Parameters:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 100V
Continuous Drain Current (Id) must meet or exceed 61A at Tc
On-Resistance (Rds On) should be comparable to 16mOhm to maintain circuit performance
Gate Threshold Voltage (Vgs(th)) must be within the 4V specification range
Operating temperature range must encompass -55°C to 175°C

Mechanical Parameters:

Package must be TO-263-3 (D2PAK) or equivalent surface mount configuration
Mounting type must be Surface Mount
Pin configuration must be compatible with 2 Leads + Tab layout

Compliance Parameters:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) required
REACH Unaffected status required

The substitute parts listed below satisfy these criteria with variations in current rating, on-resistance, and power dissipation that allow direct functional replacement in the FDB3652 application circuit.

Parameter Comparison

Parameter	FDB3652 (onsemi)	IPB144N12N3GATMA1 (Infineon)	IPB70N10S3L12ATMA1 (Infineon)	IRFS4510TRLPBF (Infineon)	PSMN015-100B,118 (Nexperia)	PSMN016-100BS,118 (Nexperia)	STB40NF10LT4 (STMicroelectronics)	STB80NF10T4 (STMicroelectronics)
Vdss (V)	100	120	100	100	100	100	100	100
Id @ Tc (A)	61	56	70	61	75	57	40	80
Rds On @ 10V (mOhm)	16	14.4	11.8	13.9	15	16	33	15
Vgs(th) (V)	4	4	2.4	4	4	4	2.5	4
Qg @ 10V (nC)	53	49	80	87	90	49	64	182
Ciss @ 25V (pF)	2880	3220	5550	3180	4900	2404	2300	5500
Power Dissipation @ Tc (W)	150	107	125	140	300	148	150	300
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-65 to 175	-55 to 175
Package	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
MSL	1	1	1	1	1	1	1	1
REACH Unaffected	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All substitute parts listed are RoHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity rating, and maintain REACH Unaffected status, ensuring regulatory alignment with the FDB3652 across all major compliance frameworks.

Direct Electrical Equivalents (Vdss = 100V, Id ≥ 61A):

The IPB70N10S3L12ATMA1, IRFS4510TRLPBF, PSMN015-100B,118, and STB80NF10T4 provide continuous drain current ratings at or above 61A with 100V Vdss rating. These parts maintain the electrical performance envelope of the FDB3652 and are suitable for applications requiring equivalent or higher current handling capacity. All four parts carry Active product status from their respective manufacturers (Infineon, Infineon, Nexperia, and STMicroelectronics).

Voltage-Rated Alternatives (Vdss > 100V):

The IPB144N12N3GATMA1 offers 120V Vdss with 56A continuous drain current. This part is suitable for applications where higher voltage margin is beneficial, though the current rating is slightly below the FDB3652 specification. This part carries Active product status from Infineon.

Current-Limited Alternatives (Vdss = 100V, Id < 61A):

The PSMN016-100BS,118 and STB40NF10LT4 provide reduced current ratings (57A and 40A respectively) compared to the FDB3652. These parts are suitable only for applications where the circuit design accommodates lower continuous drain current specifications. Both parts carry Active product status.

High Power Dissipation Options:

The PSMN015-100B,118 and STB80NF10T4 offer maximum power dissipation ratings of 300W at Tc, compared to the FDB3652's 150W. These parts provide thermal headroom for applications with elevated power requirements and are suitable for designs where thermal management is a limiting factor.

Frequently Asked Questions (FAQ)

Q: Can the IPB70N10S3L12ATMA1 directly replace the FDB3652 in all applications?

A: The IPB70N10S3L12ATMA1 meets the primary electrical criteria: 100V Vdss, 70A continuous drain current (exceeding the 61A requirement), and TO-263-3 D2PAK package compatibility. However, the lower gate threshold voltage (2.4V vs. 4V) and higher input capacitance (5550 pF vs. 2880 pF) may affect gate drive circuit timing and switching characteristics. Circuit validation is required to confirm compatibility with the specific gate drive implementation.

Q: What is the significance of the Rds On parameter in selecting a substitute?

A: On-resistance (Rds On) directly determines conduction losses and heat generation in the MOSFET. The FDB3652 specifies 16mOhm at 61A and 10V gate drive. Substitute parts with lower Rds On (such as IPB70N10S3L12ATMA1 at 11.8mOhm) reduce power dissipation and improve efficiency. Substitute parts with higher Rds On (such as STB40NF10LT4 at 33mOhm) increase conduction losses and may require thermal design review.

Q: Are all substitute parts available in the same packaging configuration?

A: All substitute parts listed are housed in TO-263-3 (D2PAK) surface mount packages with 2 Leads + Tab configuration, ensuring mechanical and pin compatibility with the FDB3652. Printed circuit board layouts and thermal management structures designed for the FDB3652 are compatible with all listed substitutes.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. The FDB3652 specifies 53nC at 10V. Substitute parts with higher gate charge (such as IRFS4510TRLPBF at 87nC or STB80NF10T4 at 182nC) require higher gate drive current or longer switching times. Substitute parts with lower gate charge (such as IPB70N10S3L12ATMA1 at 80nC or PSMN016-100BS,118 at 49nC) may improve switching speed and reduce gate drive power consumption.

Q: Why is the STB40NF10LT4 listed as a substitute if its current rating is only 40A?

A: The STB40NF10LT4 is included as a substitute for applications where the circuit design operates below 40A continuous drain current. This part maintains the 100V Vdss rating, TO-263-3 D2PAK package, and 150W power dissipation specification of the FDB3652. Selection of this part is appropriate only when the application current requirement does not exceed 40A.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts maintain RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity rating, and REACH Unaffected status. These certifications ensure regulatory alignment with the FDB3652 across European Union, North American, and international supply chain requirements.

Q: How does the higher Vdss rating of the IPB144N12N3GATMA1 (120V vs. 100V) affect circuit design?

A: The 120V Vdss rating provides additional voltage margin and improved reliability in applications subject to voltage transients or overshoot conditions. However, the 56A continuous drain current rating is below the FDB3652's 61A specification. This part is suitable only for applications where the circuit design accommodates the reduced current rating and benefits from the higher voltage rating.

Q: Are there thermal management differences between the FDB3652 and substitute parts?

A: The FDB3652 specifies 150W maximum power dissipation at Tc. Substitute parts vary: IPB144N12N3GATMA1 (107W), IPB70N10S3L12ATMA1 (125W), IRFS4510TRLPBF (140W), PSMN015-100B,118 (300W), PSMN016-100BS,118 (148W), STB40NF10LT4 (150W), and STB80NF10T4 (300W). Parts with lower power dissipation ratings may require thermal design review if the application generates power levels approaching the FDB3652 specification. Parts with higher ratings provide thermal margin.

Q: What is the product status significance for new design considerations?

A: The FDB3652 carries "Not For New Designs" status, indicating onsemi has discontinued this component for new applications. All listed substitute parts carry "Active" product status from their respective manufacturers (Infineon, Nexperia, and STMicroelectronics), ensuring long-term availability, continued manufacturing support, and access to updated technical documentation for new design implementations.

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