FDB3632 N-Channel MOSFET 100V 80A Equivalent & Substitute Parts

Part Overview

The FDB3632 is an N-Channel MOSFET manufactured by onsemi in the PowerTrench® series. This device operates at 100V drain-to-source voltage with 80A continuous drain current (Tc) and 310W maximum power dissipation. The component is housed in a Surface Mount TO-263 (D2PAK) package and is classified as Active product status with full RoHS3 compliance.

Substitute parts are necessary when the FDB3632 reaches end-of-life status, when inventory becomes unavailable, or when design requirements necessitate alternative electrical or thermal characteristics within the same package and voltage class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Tc)	80	A
On-State Resistance (Rds On) @ 80A, 10V	9	mOhm
Gate Charge (Qg) @ 10V	110	nC
Power Dissipation (Tc)	310	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the FDB3632 is determined by the following criteria:

Mandatory Matching Parameters:

Drain-to-Source Voltage (Vdss): 100V (allows 80V minimum for lower-voltage applications, not recommended for 100V circuits)
Package Type: TO-263 (D2PAK) with 2 Leads + Tab configuration
Mounting Type: Surface Mount
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C (Tj)

Electrical Compatibility Parameters:

Continuous Drain Current (Id @ Tc): 80A or greater
On-State Resistance (Rds On): 9mOhm to 15mOhm @ 10V (lower values acceptable)
Gate Charge (Qg): 30nC to 233nC @ 10V
Power Dissipation: 125W or greater

Compliance Requirements:

RoHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Unaffected status

Substitute parts are grouped into two categories: direct electrical equivalents (matching 80A+ current rating at 100V) and functional alternatives (meeting minimum current and voltage requirements with acceptable thermal performance).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Pd (W)	Product Status
FDB3632	onsemi	100	80	9	110	310	Active
STB80NF10T4	STMicroelectronics	100	80	15	182	300	Active
IPB083N10N3GATMA1	Infineon Technologies	100	80	8.3	55	125	Active
IRFS4410ZTRLPBF	Infineon Technologies	100	97	9	120	230	Active
PSMN9R5-100BS,118	Nexperia USA Inc.	100	89	9.6	82	211	Active
PSMN015-100B,118	Nexperia USA Inc.	100	75	15	90	300	Active
STB120NF10T4	STMicroelectronics	100	110	10.5	233	312	Active
BUK768R1-100E,118	Nexperia USA Inc.	100	100	8.1	108	263	Obsolete
PHB45NQ10T,118	Nexperia USA Inc.	100	47	25	61	150	Active
PHB27NQ10T,118	Nexperia USA Inc.	100	28	50	30	107	Active
PSMN8R7-80BS,118	Nexperia USA Inc.	80	90	8.7	52	170	Active

Engineering Selection Recommendations

Primary Equivalent (Direct Replacement):

STB80NF10T4 (STMicroelectronics) is the primary equivalent for the FDB3632. Both devices share identical 100V/80A electrical ratings, TO-263 D2PAK packaging, and Active product status. The STB80NF10T4 exhibits higher on-state resistance (15mOhm vs. 9mOhm) and higher gate charge (182nC vs. 110nC), resulting in slightly reduced efficiency and switching speed. Power dissipation is comparable (300W vs. 310W). This part is suitable for direct substitution in applications where the FDB3632 is unavailable.

High-Performance Alternatives (100V Class):

IRFS4410ZTRLPBF (Infineon Technologies) provides superior electrical performance with 97A continuous current, lower on-state resistance (9mOhm), and reduced gate charge (120nC). This device is recommended for applications requiring improved efficiency and thermal performance. Power dissipation is 230W, which may limit use in high-power applications.

PSMN9R5-100BS,118 (Nexperia USA Inc.) offers 89A continuous current with on-state resistance of 9.6mOhm and gate charge of 82nC. Power dissipation is 211W. This part provides balanced performance between the FDB3632 and lower-current alternatives.

Lower-Current Alternatives (100V Class):

PSMN015-100B,118 (Nexperia USA Inc.) is rated for 75A continuous current with 15mOhm on-state resistance and 300W power dissipation. This part is suitable for applications where 80A current capacity is not required.

PHB45NQ10T,118 (Nexperia USA Inc.) is rated for 47A continuous current and is appropriate for moderate-power applications.

PHB27NQ10T,118 (Nexperia USA Inc.) is rated for 28A continuous current and is suitable for low-to-moderate power applications.

Reduced-Voltage Alternative (80V Class):

PSMN8R7-80BS,118 (Nexperia USA Inc.) operates at 80V drain-to-source voltage with 90A continuous current. This part is not recommended as a direct substitute for 100V applications but may be used in circuits with maximum operating voltages of 80V or lower.

Obsolete Status:

BUK768R1-100E,118 (Nexperia USA Inc.) is classified as Obsolete and should not be selected for new designs. Existing inventory may be available but future procurement is not assured.

Compliance Verification:

All recommended substitute parts maintain RoHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status. All parts operate across the -55°C to 175°C temperature range. Surface Mount TO-263 D2PAK packaging is consistent across all alternatives.

Frequently Asked Questions (FAQ)

Q: Can I use STB80NF10T4 as a direct replacement for FDB3632?

A: Yes. Both devices share 100V/80A electrical ratings and TO-263 D2PAK packaging. The STB80NF10T4 exhibits higher on-state resistance and gate charge, which may result in slightly higher power dissipation and slower switching speed. Thermal and electrical performance must be verified in the target application.

Q: What is the difference between the FDB3632 and IRFS4410ZTRLPBF?

A: The IRFS4410ZTRLPBF is rated for 97A continuous current compared to the FDB3632's 80A. The IRFS4410ZTRLPBF has lower on-state resistance (9mOhm vs. 9mOhm) and lower gate charge (120nC vs. 110nC), resulting in improved efficiency. Power dissipation is lower (230W vs. 310W). The IRFS4410ZTRLPBF is suitable for applications requiring higher current capacity and improved thermal performance.

Q: Can I use PSMN8R7-80BS,118 in a 100V circuit?

A: No. The PSMN8R7-80BS,118 is rated for 80V maximum drain-to-source voltage. Using this device in a 100V circuit exceeds its voltage rating and will result in device failure. This part is suitable only for applications with maximum operating voltages of 80V or lower.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts listed are housed in TO-263 (D2PAK) Surface Mount packages with 2 Leads + Tab configuration. Pin assignments and PCB footprints are identical across all alternatives.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge (such as the STB80NF10T4 at 182nC) requires more energy and results in slower switching speed. Lower gate charge (such as the IPB083N10N3GATMA1 at 55nC) enables faster switching and reduced switching losses. Selection depends on the gate driver circuit and switching frequency requirements.

Q: Why is BUK768R1-100E,118 listed as Obsolete?

A: Obsolete status indicates that the manufacturer has discontinued production and support for this part. While existing inventory may be available from distributors, future procurement cannot be assured. New designs should not incorporate obsolete parts.

Q: What is the impact of on-state resistance (Rds On) on circuit performance?

A: On-state resistance directly affects conduction losses and heat generation. Lower Rds On values (such as the IPB083N10N3GATMA1 at 8.3mOhm) result in reduced power dissipation and improved efficiency. Higher Rds On values (such as PHB27NQ10T,118 at 50mOhm) result in increased power dissipation and higher junction temperatures. Selection must account for thermal management capabilities of the target application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain RoHS3 compliance and REACH Unaffected status. Moisture Sensitivity Level is MSL 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Q: Can I use a higher-current rated device as a substitute?

A: Yes. Devices with higher current ratings (such as STB120NF10T4 at 110A or BUK768R1-100E,118 at 100A) are electrically compatible with the FDB3632 and may be used as substitutes. Higher-current devices typically exhibit lower on-state resistance and improved thermal performance. Verify that the target application can accommodate the potentially different gate charge and switching characteristics.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts operate across the -55°C to 175°C junction temperature range, matching the FDB3632 specification. This range is suitable for industrial and automotive applications.

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