FDB3502 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDB3502 is an N-Channel MOSFET manufactured by onsemi, rated for 75V drain-to-source voltage with 6A continuous drain current at ambient temperature (Ta) and 14A at case temperature (Tc). This device operates in the PowerTrench® series and is housed in a Surface Mount TO-263 (D2PAK) package. The FDB3502 is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or when performance parameters of substitute devices meet or exceed the application requirements within the specified electrical and mechanical constraints.

Substiute Parts

FDB3502

onsemiIn Stock: 16642FDB3502 Datasheet

Current PartRFQ

IRFZ34NSTRLPBF

Infineon TechnologiesIn Stock: 2107IRFZ34NSTRLPBF Datasheet

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PHB29N08T,118

NXP SemiconductorsIn Stock: 3659PHB29N08T,118 Datasheet

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PSMN005-75B,118

Nexperia USA Inc.In Stock: 10087PSMN005-75B,118 Datasheet

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PSMN008-75B,118

Nexperia USA Inc.In Stock: 6579PSMN008-75B,118 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDB3502 are selected based on the following critical parameters that determine functional compatibility:

Primary Selection Criteria:

• Package Type: All substitutes must use TO-263-3 (D2PAK) Surface Mount package
• Drain-to-Source Voltage (Vdss): Substitute devices must equal or exceed 75V
• Continuous Drain Current: Substitute devices must support minimum 6A (Ta) or 14A (Tc) operation
• FET Type: All substitutes must be N-Channel MOSFETs
• Mounting Type: All substitutes must be Surface Mount compatible
• Technology: All substitutes must use Metal Oxide (MOSFET) technology

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Operating range compatibility
• On-Resistance (Rds On): Electrical performance characteristics
• Gate Charge (Qg): Switching speed and drive requirements
• Operating Temperature Range: Thermal operating envelope
• Regulatory Compliance: RoHS3 compliance and REACH status

The four substitute parts listed (PSMN005-75B,118; PSMN008-75B,118; IRFZ34NSTRLPBF; PHB29N08T,118) meet the primary selection criteria and are therefore qualified as functional equivalents or upgrades for the FDB3502 in applications where the specified electrical parameters are acceptable.

Parameter Comparison

Engineering Selection Recommendations

PSMN005-75B,118 and PSMN008-75B,118 (Nexperia USA Inc.)

Both PSMN series devices are rated for 75V Vdss, matching the FDB3502 specification exactly. These parts support 75A continuous drain current at case temperature, significantly exceeding the FDB3502's 14A rating. Both devices are RoHS3 compliant, REACH unaffected, and operate across -55°C to 175°C, extending the upper temperature limit by 25°C compared to the FDB3502. The PSMN005-75B,118 exhibits lower on-resistance (5 mOhm) than the FDB3502 (47 mOhm), while the PSMN008-75B,118 provides 8.5 mOhm on-resistance. Both are housed in TO-263-3 (D2PAK) packages and are available in high inventory quantities (10,000 and 6,490 units respectively). These devices are suitable for applications requiring higher current capacity or improved thermal performance within the same voltage class.

IRFZ34NSTRLPBF (Infineon Technologies)

The IRFZ34NSTRLPBF is rated for 55V Vdss, which is 20V lower than the FDB3502's 75V specification. This device supports 29A continuous drain current at case temperature and operates across -55°C to 175°C. The on-resistance is 40 mOhm at 16A and 10V, lower than the FDB3502's 47 mOhm. This part is RoHS3 compliant and housed in D2PAK package. The reduced voltage rating limits this device to applications where maximum drain-to-source voltage does not exceed 55V. This substitute is appropriate only when circuit design constraints guarantee that Vdss will not exceed 55V.

PHB29N08T,118 (NXP Semiconductors)

The PHB29N08T,118 is rated for 75V Vdss, matching the FDB3502 specification. This device supports 27A continuous drain current at case temperature and operates across -55°C to 175°C. The on-resistance is 50 mOhm at 14A and 11V, comparable to the FDB3502's 47 mOhm. The device is housed in TO-263-3 (D2PAK) package with 3,642 units in inventory. This part is suitable for applications requiring voltage compatibility with the FDB3502 and moderate current capacity increases.

All substitute parts maintain Surface Mount TO-263 (D2PAK) package compatibility and N-Channel MOSFET technology. Selection among these substitutes depends on specific application requirements for current capacity, on-resistance performance, and thermal operating range.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ34NSTRLPBF replace the FDB3502 in all applications?

A: The IRFZ34NSTRLPBF has a maximum Vdss rating of 55V, compared to the FDB3502's 75V rating. This device can only be used in applications where the drain-to-source voltage does not exceed 55V. Applications requiring the full 75V rating must use the FDB3502 or substitute parts rated for 75V (PSMN005-75B,118; PSMN008-75B,118; PHB29N08T,118).

Q: What is the primary advantage of the PSMN005-75B,118 over the FDB3502?

A: The PSMN005-75B,118 provides significantly higher continuous drain current (75A at Tc versus 14A at Tc) and lower on-resistance (5 mOhm versus 47 mOhm). These characteristics result in reduced power dissipation and improved thermal performance in high-current applications. Both devices maintain the same 75V Vdss rating and TO-263-3 (D2PAK) package.

Q: Are all substitute parts RoHS3 compliant?

A: The FDB3502, PSMN005-75B,118, PSMN008-75B,118, and IRFZ34NSTRLPBF are explicitly listed as RoHS3 compliant. The PHB29N08T,118 RoHS status is not specified in the provided data. Verification of RoHS compliance for the PHB29N08T,118 is required for applications with regulatory compliance requirements.

Q: What is the impact of gate charge differences among these devices?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The FDB3502 has 15 nC gate charge, while substitutes range from 19 nC (PHB29N08T,118) to 165 nC (PSMN005-75B,118). Higher gate charge requires more driver current and longer switching times. Applications with stringent switching speed requirements should consider gate charge specifications when selecting substitutes.

Q: Can the FDB3502 be used in applications requiring operation above 150°C?

A: The FDB3502 is rated for operation up to 150°C junction temperature. All four substitute parts extend this limit to 175°C. Applications requiring operation between 150°C and 175°C must use one of the substitute devices (PSMN005-75B,118; PSMN008-75B,118; IRFZ34NSTRLPBF; PHB29N08T,118).

Q: Are the packaging dimensions identical across all these devices?

A: All devices use the TO-263-3 (D2PAK) package designation. This package type is standardized for Surface Mount applications with identical lead configuration (2 Leads + Tab). Physical dimensions and PCB footprints are compatible across all listed parts.

Q: What is the difference between the PSMN005-75B,118 and PSMN008-75B,118?

A: Both devices are rated for 75V and 75A continuous drain current with identical power dissipation (230W at Tc). The primary difference is on-resistance: PSMN005-75B,118 has 5 mOhm while PSMN008-75B,118 has 8.5 mOhm. The PSMN005-75B,118 also has higher gate charge (165 nC versus 122.8 nC) and input capacitance (8250 pF versus 5260 pF). Selection depends on whether lower on-resistance or lower gate charge is prioritized for the specific application.

Q: Is the FDB3502 still in active production?

A: Yes, the FDB3502 is classified as Active product status with 16,588 units in current inventory. All substitute parts are also classified as Active with available inventory quantities ranging from 2,030 to 10,000 units.