FDB2670 Equivalent & Substitute Parts

Part Overview

The FDB2670 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 19A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for power switching applications requiring moderate current handling and thermal dissipation up to 93W.

The FDB2670 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

FDB2670

onsemiIn Stock: 1952FDB2670 Datasheet

Current PartRFQ

STB19NF20

STMicroelectronicsIn Stock: 18447STB19NF20 Datasheet

SimilarRFQ

STB30NF20

STMicroelectronicsIn Stock: 15365STB30NF20 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDB2670 is determined by the following critical parameters:

Mandatory Matching Criteria:

• Drain-to-Source Voltage (Vdss): 200V minimum
• Package Type: TO-263 (D2PAK) surface mount
• FET Type: N-Channel MOSFET
• Mounting: Surface Mount

Performance Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than 19A
• On-State Resistance (Rds On): Equal to or lower than 130 mOhm (at specified gate voltage)
• Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
• Power Dissipation: Equal to or greater than 93W

Compliance Criteria:

• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• REACH Status: REACH Unaffected
• ECCN Classification: EAR99

The substitute parts identified (STB19NF20 and STB30NF20) meet the mandatory matching criteria and operate within the allowed electrical parameter ranges for direct substitution in applications designed for the FDB2670.

Parameter Comparison

Engineering Selection Recommendations

STB19NF20 Selection Criteria:

The STB19NF20 is suitable for applications where the FDB2670 is used at or below 15A continuous drain current. This substitute offers active product status with ROHS3 compliance and unlimited moisture sensitivity rating. The lower gate charge (24 nC versus 38 nC) results in faster switching characteristics. However, the reduced maximum power dissipation (90W versus 93W) and narrower operating temperature range (-55°C to 150°C versus -65°C to 175°C) must be evaluated against application thermal and environmental requirements.

STB30NF20 Selection Criteria:

The STB30NF20 is suitable for applications requiring higher current capacity or improved thermal performance. This substitute provides 30A continuous drain current and 125W power dissipation, offering design margin above the FDB2670 specifications. The lower on-state resistance (75 mOhm at 15A versus 130 mOhm at 10A) reduces conduction losses. Active product status and ROHS3 compliance ensure long-term supply availability. The narrower operating temperature range (-55°C to 150°C) applies the same constraint as STB19NF20.

Compliance Considerations:

Both substitute parts maintain REACH Unaffected status and EAR99 ECCN classification consistent with the FDB2670. Both are ROHS3 compliant, providing environmental compliance advantages over the main part. Moisture sensitivity level remains at MSL 1 (Unlimited) for all parts.

Frequently Asked Questions (FAQ)

Q: Can STB19NF20 directly replace FDB2670 in all applications?

A: STB19NF20 is suitable for applications operating at 15A or below. The reduced continuous drain current rating (15A versus 19A) and lower maximum power dissipation (90W versus 93W) must be verified against circuit requirements. The narrower operating temperature range (-55°C to 150°C versus -65°C to 175°C) may restrict use in extreme temperature environments.

Q: What are the advantages of using STB30NF20 over STB19NF20?

A: STB30NF20 provides higher current capacity (30A versus 15A), lower on-state resistance (75 mOhm versus 160 mOhm), and greater power dissipation capability (125W versus 90W). These characteristics reduce conduction losses and thermal stress in high-current applications. Both parts share the same voltage rating (200V) and package type (D2PAK).

Q: Are the substitute parts pin-compatible with FDB2670?

A: Yes. Both STB19NF20 and STB30NF20 use the D2PAK (TO-263) package with identical pin configuration: Gate, Drain, and Source connections match the FDB2670 layout. Direct PCB substitution is possible without layout modification.

Q: What is the impact of different gate charge values on circuit design?

A: STB19NF20 has lower gate charge (24 nC versus 38 nC for FDB2670 and STB30NF20). Lower gate charge enables faster switching transitions and reduces gate driver power requirements. Circuit designs with current-limited gate drivers may benefit from this characteristic. Designs with fixed gate resistors will experience faster switching with STB19NF20.

Q: How do on-state resistance differences affect thermal performance?

A: On-state resistance directly determines conduction losses (I²R). STB30NF20 exhibits the lowest on-state resistance (75 mOhm at 15A), resulting in lower heat generation compared to FDB2670 (130 mOhm at 10A) and STB19NF20 (160 mOhm at 7.5A). Applications with high duty cycles or continuous operation benefit from reduced conduction losses.

Q: Are there temperature range limitations when substituting?

A: FDB2670 operates from -65°C to 175°C. Both STB19NF20 and STB30NF20 operate from -55°C to 150°C. Applications requiring operation below -55°C or above 150°C cannot use these substitutes. Verify application temperature requirements before selection.

Q: What compliance advantages do the substitute parts offer?

A: Both STB19NF20 and STB30NF20 are ROHS3 compliant, whereas FDB2670 compliance status is not specified. Both substitutes maintain REACH Unaffected status and EAR99 ECCN classification. Active product status for both substitutes ensures continued availability and supply chain support.