FDB2552 N-Channel MOSFET 150V 5A/37A TO-263 Equivalent & Substitute Parts

Part Overview

The FDB2552 is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage with continuous drain current of 5A at Ta and 37A at Tc. The device is housed in a Surface Mount TO-263 (D2PAK) package and is part of the PowerTrench® series. The FDB2552 maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, gate charge, and thermal performance within the same or compatible package configurations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current @ 25°C (Ta)	5	A
Continuous Drain Current @ 25°C (Tc)	37	A
Rds On (Max) @ Id, Vgs	36 mOhm @ 16A, 10V	mOhm
Gate Charge (Qg) @ Vgs	51 nC @ 10V	nC
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FDB2552 are qualified based on the following critical parameters:

Voltage Rating Compatibility: All substitute parts maintain the 150V Vdss rating, ensuring direct voltage class equivalence.

Current Capability: Substitute parts are selected where continuous drain current (Id) at Tc meets or exceeds the FDB2552 specification of 37A at Tc, or where Ta-rated current meets or exceeds 5A.

On-State Resistance (Rds On): Substitute parts are evaluated where Rds On characteristics at 10V gate drive are comparable or superior, ensuring equivalent or improved conduction losses.

Gate Charge (Qg): Gate charge values are compared to assess switching speed and drive circuit compatibility.

Thermal Performance: Power dissipation ratings and operating temperature ranges are verified for thermal equivalence.

Package Compatibility: All substitute parts utilize TO-263 (D2PAK) or compatible Surface Mount packages, ensuring mechanical and thermal interface compatibility.

Compliance Status: RoHS3 compliance and regulatory certifications are maintained across all substitute selections.

Parameter Comparison

Parameter	FDB2552 (Main)	NTB35N15T4G	IXTA42N15T	IXTA56N15T
Manufacturer	onsemi	onsemi	IXYS	IXYS
Drain to Source Voltage (Vdss)	150 V	150 V	150 V	150 V
Continuous Drain Current (Id) @ Tc	37 A	37 A	42 A	56 A
Rds On (Max) @ 10V	36 mOhm @ 16A	50 mOhm @ 18.5A	45 mOhm @ 21A	36 mOhm @ 28A
Gate Charge (Qg) @ 10V	51 nC	100 nC	21 nC	34 nC
Power Dissipation (Max)	150 W (Tc)	178 W (Tj)	200 W (Tc)	300 W (Tc)
Operating Temperature Range	-55 to 175 °C (TJ)	-55 to 150 °C (TJ)	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)
Package Type	TO-263 (D2PAK)	D2PAK	TO-263 (D2PAK)	TO-263AA
Product Status	Active	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXTA56N15T (Primary Substitute): This IXYS device is recommended as the primary substitute for new designs. It maintains 150V Vdss rating with superior continuous drain current of 56A at Tc, exceeding the FDB2552 specification. The IXTA56N15T delivers equivalent on-state resistance of 36 mOhm at 10V gate drive, matching the FDB2552 performance. Power dissipation capability of 300W at Tc provides thermal margin. The device maintains Active product status with full RoHS3 compliance and operating temperature range of -55 to 175°C, matching the FDB2552. Gate charge of 34 nC at 10V is lower than the FDB2552, enabling faster switching characteristics.

IXTA42N15T (Secondary Substitute): This IXYS device provides a direct current-class substitute with 42A continuous drain current at Tc, exceeding the FDB2552 by 5A. On-state resistance of 45 mOhm at 10V is slightly elevated compared to the FDB2552. Gate charge of 21 nC at 10V is significantly lower, providing improved switching performance. Power dissipation of 200W at Tc exceeds the FDB2552 specification. The device maintains Active product status, full RoHS3 compliance, and operating temperature range of -55 to 175°C.

NTB35N15T4G (Compatibility Limitation): This onsemi device matches the FDB2552 continuous drain current specification of 37A at Ta. However, the NTB35N15T4G carries Obsolete product status, limiting its suitability for new designs. Operating temperature range is restricted to -55 to 150°C, below the FDB2552 specification of 175°C maximum. On-state resistance of 50 mOhm at 10V is elevated compared to the FDB2552. Gate charge of 100 nC at 10V is significantly higher, resulting in slower switching characteristics. This device is suitable only for legacy system maintenance where component continuity is required.

Frequently Asked Questions (FAQ)

Q: Can IXTA56N15T directly replace FDB2552 in existing designs?

A: Yes. The IXTA56N15T maintains identical 150V Vdss rating and exceeds the FDB2552 continuous drain current specification of 37A at Tc with 56A capability. On-state resistance is equivalent at 36 mOhm at 10V gate drive. Package compatibility is confirmed with TO-263 (D2PAK) Surface Mount configuration. RoHS3 compliance and operating temperature range of -55 to 175°C match the FDB2552 specification.

Q: What is the primary difference between IXTA42N15T and IXTA56N15T?

A: The IXTA56N15T provides higher continuous drain current of 56A at Tc compared to IXTA42N15T at 42A. On-state resistance is equivalent at 36 mOhm for IXTA56N15T versus 45 mOhm for IXTA42N15T at 10V gate drive. Power dissipation capability is 300W for IXTA56N15T versus 200W for IXTA42N15T. Gate charge is 34 nC for IXTA56N15T versus 21 nC for IXTA42N15T. Both devices maintain Active product status and full compliance certifications.

Q: Why is NTB35N15T4G marked as Obsolete?

A: The NTB35N15T4G carries Obsolete product status as designated by onsemi. This classification indicates the device is no longer in active production and is not recommended for new designs. Existing inventory may be available for legacy system support, but long-term availability is not guaranteed.

Q: Are there thermal performance differences between substitute parts?

A: Yes. The FDB2552 is rated for 150W power dissipation at Tc. The NTB35N15T4G provides 178W at Tj. The IXTA42N15T provides 200W at Tc. The IXTA56N15T provides 300W at Tc. Higher power dissipation ratings provide thermal margin in applications with elevated ambient temperatures or continuous high-current operation.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on and off. The FDB2552 requires 51 nC at 10V. The IXTA42N15T requires only 21 nC, enabling faster switching with lower gate drive power. The IXTA56N15T requires 34 nC, providing intermediate switching speed. The NTB35N15T4G requires 100 nC, resulting in slower switching characteristics. Lower gate charge reduces switching losses and improves efficiency in high-frequency applications.

Q: Is package compatibility confirmed for all substitute parts?

A: All substitute parts utilize TO-263 (D2PAK) or compatible Surface Mount packages. The FDB2552, IXTA42N15T, and IXTA56N15T use standard TO-263 (D2PAK) configuration. The NTB35N15T4G uses D2PAK package, which is mechanically and thermally compatible. Pin configuration and thermal interface characteristics are equivalent across all devices.

Q: What compliance certifications are maintained across all parts?

A: All substitute parts maintain RoHS3 compliance status. REACH status is Unaffected for all devices. ECCN classification is EAR99 for all parts. HTSUS code is 8541.29.0095 for all devices. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no moisture sensitivity restrictions.

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